研究発表 - 多田　宗弘

Low-cost Cu Interconnects Using Direct Patterning Process (DPP) of Photo-sensitive MSZ with Low-k, Bottom Anti-reflective layer

M. Tada, T. Ogura, and Y. Hayashi

International Conference on Solid State Devices and Materials, (Nagoya, Japan), pp. 44-45., 

2002年09月

Chemical Structural Control of Plasma-Polymerized Divinylsiloxane Benzocyclobutene Films for Sub 100nm-node ULSI devices

Y. Harada, M. Tada, J. Kawahara, and Y. Hayashi

International Conference on Solid State Devices and Materials, (Nagoya, Japan), pp. 180-181., 

2002年09月

Cu dual damascene interconnects in porous organosilica film with organic hard-mask and etch-stop layers for 70 nm-node ULSIs

Tada, M. and Harada, Y. and Hijioka, K. and Ohtake, H. and Takeuchi, T. and Saito, S. and Onodera, T. and Hiroi, M. and Furutake, N. and Hayashi, Y.

Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002, 

2002年06月

　概要を見る

Hybrid-type, Cu dual damascene interconnects (DDI) are fabricated in a porous organosilica film (k = 2.1) inserted between low-k films of hard-mask (HM) and etch-stop (ES) layers. Plasma-polymerized, divinyl siloxane bis-benzocyclobutene (p-BCB, k = 2.7) film, instead of SiCN film (k > 4), is selected for these HM and ES layers due to the low k-value as well as the high etch-stop property to the porous film. The line capacitance in the hybrid-type, Cu-DDI with BCB-HM and BCB-ES layers decreases 20% compared with that of the Cu-DDI with SiO2-HM and SiCN-ES layers, achieving the effective dielectric constant (keff) of 2.6. This new interconnect structure is a strong candidate for the 70 nm-node ULSIs.

• Access to Document (DOI)

Dual Hard Mask Process for Low-k Porous Organosilica Dielectric in Copper Dual Damascene Interconnect Fabrication

M. Hiroi, M. Tada, H. Ohtake, S. Saito, T. Onodera, N. Furutake, Y. Harada, Y. Hayashi

IEEE 2001 International. Interconnect Technology Conference, (San Francisco, USA), pp. 295-297., 

2001年06月

Barrier-metal-free (BMF), Cu dual-damascene interconnects with Cu-epi-contacts buried in anti-diffusive, low-k organic film

Tada, M. and Ohtake, H. and Harada, Y. and Hiroi, M. and Saito, S. and Onodera, T. and Furutake, N. and Kawahara, J. and Tagami, M. and Kinoshita, K. and Fukai, T. and Mogami, T. and Hayashi, Y.

IEEE Symposium on VLSI Circuits, Digest of Technical Papers, 

2001年06月

　概要を見る

Barrier-metal-free (BMF), Cu dual-damascene interconnects (DDI) are fabricated in the plasma-polymerized, divinyl siloxane bis-benzocyclobutene (p-BCB: k=2.6) polymer film, which is featured by the anti-diffusive characteristics for the Cu. The BMF-structure has inter-line leak current as low as that of a conventional barrier-inserted structure and is estimated to keep the high insulating property over 10 years under 1MV/cm. The BMF-structure also derives Cu-epi-contacts, reducing the via-resistance of 50% to the conventional Cu/barrier/Cu contacts. The effective dielectric constant was keff=3.1 including very thin SiN etch-stop-layers, accomplishing 20%-fast CMOS device operation to that of the conventional Cu-DDI in the SiO2 with Ta/TaN barriers. The BMF, Cu-DDIs buried directly in the p-BCB film is one of the ultimate structures for high performance, 0.1μm-CMOS devices and beyond.

• Access to Document (DOI)

Process Design Methodology for Via-Shape-Controlled, Copper Dual Damascene Interconnects in Low-k Organic Film

K. Kinoshita, M. Tada, T. Usami, M. Hiroi, T. Tonegawa, K. Shiba, T. Onodera, M. Tagami, S. Saitoh, and Y. Hayashi

IEEE International Electron Devices Meeting (IEDM) 2000, (San Francisco, USA), pp. 257-260., 

2000年12月

Cu Single Damascene Interconnects with Plasma-polymerized Organic Polymers (k=2.6) for High-speed, 0.1 μm CMOS devices

M. Tagami, T. Fukai, M. Hiroi, J. Kawahara, K. Shiba, M. Tada, T. Onodera, S. Saito, K. Kinoshita, T. Ogura, M. Narihiro, K. Arai, K. Yamaguchi, M. Fukaishi, K. Kikuta, T. Mogami, and Y. Hayashi

IEEE International Electron Devices Meeting (IEDM) 2000, (San Francisco, USA), pp. 2851-853., 

2000年12月

Characterization of plasma-polymerized divinyl-siloxane benzocyclobutene (DVS-BCB) polymer film

M. Tada, J. Kawahara, and Y. Hayashi

Advanced Metallization Conference, (Sam Diego, USA), pp. 579-585., 

2000年10月

Highly thermal-stable, plasma-polymerized BCB polymer film (k = 2.6) for Cu dual-damascene interconnects

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Digest of Technical Papers - Symposium on VLSI Technology, 

2000年06月

　概要を見る

Highly thermal-stable, plasma-polymerized divinyl siloxane bis-benzocyclobutene (p-BCB) polymer film is developed for Cu dual-damascene interconnects. The thermal stability of p-BCB is improved over 400 °C by higher deposition temperature, having high resistance to Cu diffusion at 400 °C-annealing. Lowering the RF plasma-power and the deposition pressure, the p-BCB film has smaller dielectric constant than the conventional spin-coating BCB (k = 2.7). The p-BCB (k = 2.6)/Cu interconnects reveal 46% delay reduction of CMOS ring oscillator to the conventional SiO2/Al ones. The p-BCB is proved as a strong candidate for Cu/low-k interconnects.

• Access to Document (DOI)

MICROSTRUCTURE OF ALKALINE EARTH AND RARE EARTH FLUORIDE THIN FILMS PREPARED BY CHEMICAL PROCESS

Munehiro Tada, Shinobu Fujihara, Toshio Kimura

MRS Fall Meeting & Exhibit (Boston, USA) A6.81., 

1998年12月