研究発表 - 多田　宗弘

BEOL Interconnects for 2nm Technology Node and Beyond

Gaurav Thareja

[国際会議]  IEEE/JSAP 2025 Symposium on VLSI Technology and Circuits (VLSI) （Kyoto） , 

2025年06月

200nm-pitched,Superconducting Nb Interconnects for Cryo-CMOS Applications

N.Iguchi,H.Numata,M.Tanaka,K.Okamoto,T.Tanaka,K.Uchida,H.Ishikuro,T.Sakamoto,and M.Tada,

International Interconnect Technology Conference(IITC)2024,San Jose,United States, 

2024年06月

Gate-Length Dependent Variability of nMOSFET at Cryogenic Temperatures

Toshitsugu Sakamoto, Makoto Miyamura, Kazunori Funahashi, Munehiro Tada, Ken Uchida, Hiroki Ishikuro

International Conference on Solid State Device and Materials (SSDM) F-1-01, (Nagoya, Japan)., 

2023年09月

A 0.11pJ/bit Read Energy Embedded NanoBridge NVM and its Integration in a 28nm 32-bit RISC-V MCU

Xu Bai, Ryusuke Nebashi, Makoto Miyamura, Kazunori Funahashi, Koichiro Okamoto, Hideaki Numata, Noriyuki Iguchi, Toshitsugu Sakamoto, Munehiro Tada

International Conference on Solid State Device and Materials (SSDM) K-2-01, (Nagoya, Japan)., 

2023年09月

NanoBridge use case for FPGA

Munehiro Tada　(Invited)

DARPA MEC Back-End of Line (BEOL) Integration of Active Devices Workshop, Institute for Defense Analyses (IDA) (Alexandria, USA)., 

2023年05月

Stochastic Modeling of Cryogenic and Room Temperature Operation of ReRAM

T. Tanaka, K. Okamoto, M. Tada, K. Uchida

35th International Microprocess and Nanotechnology Conference, (Tokushima, Japan)., 

2022年11月

NanoBridge Technology for Space Applications

Munehiro Tada

JAXA 35th Microelectronics Workshop (MEWS35) (Tsukuba, Japan)., 

2022年10月

Challenge and Opportunity of Low-power Nonvolatile FPGA using NanoBridge for Cryogenic Quantum Controller

Munehiro Tada　(Invited)

International Conference on Solid State Device and Materials (SSDM) G-4-02, (Chiba, Japan)., 

2022年09月

Cryogenic FPGA

Munehiro Tada　(Invited)

Next Generation Quantum Computing, Online + Onsite (Kanagawa, Japan)., 

2022年08月

In Situ Monitoring Technique of Self-Heating in Bulk MOSFETs at Cryogenic Temperatures using Subthreshold Current

Ichikawa, M. and Tanaka, T. and Uchida, K. and Miyao, T. and Tada, M. and Ishikuro, H.

2022 IEEE Latin America Electron Devices Conference, LAEDC 2022, 

2022年07月

　概要を見る

This work proposes an evaluation technique of self-heating (SH) in a 65-nm bulk CMOS transistor at cryogenic temperature (4.2K). For the in-situ monitoring of self-heating in cryo-CMOS circuits, transient response of the subthreshold drain current is used, which makes it possible to estimate the temperature at on-state of MOSFETs. The relation between the temperature increase by self-heating and power consumption of MOSFET has been experimentally obtained, which will help a design of high performance cryo-CMOS circuits for quantum computer application.

• Access to Document (DOI)

Enhanced Drain Current in Transient Mode due to Long Ionization Time of Shallow Impurities at 4 K in 65-nm bulk Cryo CMOS Transistors

Tomohisa Miyao, Takahisa Tanaka, Itsuki Imanishi, Masayuki Ichikawa, Shuya Nakagawa, Hiroki Ishikuro, Toshitsugu Sakamoto, Munehiro Tada, and Ken Uchida

2022 Device Research Conference (DRC), (Columbus, USA), pp. 1-2., 

2022年06月

Cryogenic CMOS Performance Analysis Including BEOL Characteristics at 4K for Quantum Controller Application

K. Okamoto, T. Tanaka, M. Miyamura, H. Ishikuro, K. Uchida, T. Sakamoto, and M. Tada

2022 IEEE International Interconnect Technology Conference (IITC), (San Jose, USA), pp. 139-141., 

2022年06月

NanoBridge Technology for Embedded Novolatile Memory Application

Tada, M.

2022 IEEE International Memory Workshop, IMW 2022 - Proceedings, 

2022年05月

, 

IEEE

　概要を見る

NanoBridge (NB) is a kind of electrochemical resistive-change device using Cu ion migration from Cu interconnects into electrolyte. NBs are integrated by only two additional masks in a standard Cu-BEOL without scarifying CMOS performance. The newly developed split Cu electrode enables the lower set voltage (2.2V) and superior retention, which have been demonstrated in a 28 nm-node. High density embedded nonvolatile NB memory macro in a 65nm technology is successfully developed with P E=30 ns 30 ns programming based on the highly reliable and low-cost manufacturable NB technology. High yield is achieved with satisfying 30ns read, and more than 10 years retention at 150°C. NB properties can be systematically adjusted by tailoring the NB stack, achieving to broaden NB applications.

• Access to Document (DOI)

NanoBridge Technology for Novoaltile FPGA and Memory Applications : (Invited)

Tada, M.

IEEE International Reliability Physics Symposium Proceedings, 

2022年03月

, 

IEEE International Reliability Physics Symposium Proceedings

　概要を見る

A recent progress of NanoBridge (NB) technology is reviewed in terms of nonvolatile field-programmable gate array (FPGA) and memory (NVM) applications. The NB is a kind type of electrochemical resistive-change device using migration of Cu, in which a thickness of Cu bridge can be controlled by a programming current and an appropriate ON-conductance is programmed for depending on the applications. For a routing switch in the FPGA, two NBs are connected in series and each conductance is tuned to 0.8mS to transfer signals, in which the NBFPGA realizes 78% area and 80% power reductions compared with a conventional SRAM-FPGA. For the NVM application, that is tuned to 0.2mS, which has 150oC 20years retention with 30% degradation of the conductance, which is potentially applicable for automobile/AIoT applications.

• Access to Document (DOI)

Low-power and Radiation-tolerant FPGA with NanoBridge Technology

Munehiro Tada　(Invited)

The 27th Session of the Asia-Pacific Regional Space Agency Forum (APRSAF-27) ., 

2021年12月

Cryogenic Operation of NanoBridge at 4K for Controlling Qubit

K. Okamoto, T. Tanaka, M. Miyamura, H. Ishikuro, K. Uchida, T. Sakamoto, M. Tada

2021 International Conference on Solid State Devices and Materials (SSDM), B-5-08, Online Conference., 

2021年09月

NanoBridge Applications Technology for Low-power Rad-hard AIoT Applications

Munehiro Tada　(Invited)

2021 IEEE　International Interconnect Technology Conference（IITC）, Workshop (Kyoto, Japan)., 

2021年07月

28nm Atom-Switch FPGA: Static Timing Analysis and Evaluation

Xu Bai, Ryusuke Nebashi, Makoto Miyamura, Naoki Banno, Koichiro Okamoto, Hideaki Numata, Noriyuki Iguchi, Tadahiko Sugibayashi, Toshitsugu Sakamoto1 and Munehiro Tada

2021 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2021) A6-4　(on-line)., 

2020年08月

ON-state retention of Atom Switch eNVM for IoT/AI Inference Solution

Okamoto, K. and Nebashi, R. and Banno, N. and Bai, X. and Numata, H. and Iguchi, N. and Miyamura, M. and Hada, H. and Funahashi, K. and Sugibayashi, T. and Sakamoto, T. and Tada, M.

IEEE International Reliability Physics Symposium Proceedings, 

2020年04月

, 

IEEE

　概要を見る

An ON-state retention of a 40nm-node atom switch embedded nonvolatile memory (eNVM) has been carefully investigated for IoT/AI inference solution. Based on ON-conductance (Gon) tuning model of atom switch, one order of magnitude lower programming power is achieved while keeping the same Gon. Smaller ON-state retention dependences on temperature (Ea = 0.2eV) and time (n = 0.11) are experimentally clarified and the lifetime is predicted to be more than 10 years at 150°C under +20% shift criteria of Gon.

• Access to Document (DOI)

Via-Switch FPGA: 65nm CMOS Implementation and Architecture Extension for AI Applications

M. Hashimoto, X. Bai, N. Banno, M. Tada, T. Sakamoto, J. Yu, R. Doi, Y. Araki, H. Onodera, T. Imagawa, H. Ochi, K. Wakabayashi, Y. Mitsuyama, T. Sugibayashi

2020 IEEE International Solid- State Circuits Conference - (ISSCC), (San Francisco, USA), pp. 502-504., 

2020年02月