研究発表 - 多田　宗弘

Programmable Cell Array using Rewritable Atom Switch

M. Miyamura, T. Sakamoto, M. Tada, N. Banno, K. Okamoto, N. Iguchi, and H. Hada

Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME) 2012 (Hawaii, USA)., 

2012年10月

Atom switch technology for low-power programmable logic

M. Tada　(Invited)

2nd International Resistive-RAM Workshop at Stanford. , 

2012年10月

Improved off-state reliability of nonvolatile resistive switch with low programming voltage

Tada, M. and Sakamoto, T. and Miyamura, M. and Banno, N. and Okamoto, K. and Iguchi, N. and Hada, H.

IEEE Transactions on Electron Devices, 

2012年09月

, 

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

　概要を見る

A complementary atom switch (CAS) is proposed to realize low programming voltage and high off-state reliability for crossbar switch application. Two atom switches with bipolar operation are connected in series with opposite direction, in which the two atom switches work as a single element. The two off-state atom switches in the CAS complementarily divide voltage stress, greatly enlarging the off-state lifetime. The CAS is embedded in Cu BEOL on a 65-nm-node CMOS platform without degrading the CMOS and interconnect performances. The CAS using two atom switches is one of the candidates for realizing energy-efficient nonvolatile programmable switches. © 2012 IEEE.

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Ultra-Low Power Devices by Taking Advantages of Atom Switches with Polymer Solid-electrolyte

H. Hada, T. Sakamoto, M. Tada, N. Banno, M. Miyamura, K. Okamoto, N. Iguchi and T. Nohisa　(Invited)

International Conference on Solid State Devices and Materials, (Kyoto, Japan), pp.608-609., 

2012年09月

Nonvolatile 32x32 Crossbar Atom Switch Block Integrated on a 65-nm CMOS Platform

N. Banno, M. Tada, T. Sakamoto, K. Okamoto, M. Miyamura, N. Iguchi, T. Nohisa, and H. Hada

2012 Symposium on VLSI Technology (VLSI), (Hawaii, USA), pp. 39-40., 

2012年06月

Complementary Atom Switch (CAS) with Low Programming Voltage Embedded in Cu BEOL for Nonvolatile Programmable Logic

M. Tada, T. Sakamoto, M. Miyamura, N. Banno, K. Okamoto, N. Iguchi, and H. Hada　

The Eighth International Nanotechnology Conference on Communication and Cooperation, (Tsukuba, Japan), T11. , 

2012年05月

Conducting Mechanism Analysis of Atom Switch Devices using Polymer Solid-electrolyte

K. Okamoto, M. Tada, T. Sakamoto, M. Miyamura, N. Banno, N. Iguchi, and H. Hada

The Eighth International Nanotechnology Conference on Communication and Cooperation, (Tsukuba, Japan)., 

2012年05月

Improved reliability and switching performance of atom switch by using ternary Cu-alloy and RuTa electrodes

Tada, M. and Sakamoto, T. and Banno, N. and Okamoto, K. and Miyamura, M. and Iguchi, N. and Hada, H.

Technical Digest - International Electron Devices Meeting, IEDM, 

2012年

　概要を見る

For the first time, Cu(AlTi)-alloy active-electrode coupled with RuTa inert-electrode is proposed to improve the reliability of nonvolatile Cu atom switch. The remarkably high rupture temperature (Tr >400 oC) of the nanometer-scale Cu bridge with the high thermal resistance (Rth) is realized by the Cu-alloy without increasing programming current. The anti-Cu diffusive, RuTa-alloy improves the retention of the ON-state at 150oC and endurance to >104 cycles. The metallurgical prescription is a key to improve the reliability and switching performance of the conducting bridge. © 2012 IEEE.

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Conducting Mechanism of Atom Switch with Polymer Solid-electrolyte

K. Okamoto, M. Tada, T. Sakamoto, M. Miyamura, N. Banno, N. Iguchi, and H. Hada

2011 International Electron Devices Meeting (IEDM), (Washington DC, USA), pp. 279-282., 

2011年12月

Highly Reliable, Complementary Atom Switch (CAS) with Low Programming Voltage Embedded in Cu BEOL for Nonvolatile Programmable Logic

M. Tada, T. Sakamoto, M. Miyamura, N. Banno, K. Okamoto, N. Iguchi, T. Nohisa, and H. Hada

2011 International Electron Devices Meeting (IEDM), (Washington DC, USA), pp. 689-692., 

2011年12月

NanoBridge Technology for Nonvolatile Programmable Logic

M. Tada　（Invited）

New Non-volatile Memory Workshop (Hsinchu, Taiwan). , 

2011年11月

Programmable Cell Array Using Rewritable Solid-Electrolyte Switch Integrated in 90nm CMOS

M. Miyamura, S. Nakaya, M. Tada, K. Okamoto, T. Sakamoto, N. Banno, S. Ishida, K. Ito, H. Hada, N. Sakimura, T. Sugibayashi, M. Motomura

2011 IEEE International Solid-State Circuits Conference (ISSCC), (San Francisco, USA), pp.228-229.2月, 

2011年02月

High OFF/ON-resistive NiO ReRAM using Post-Plasma-Oxidation (PPO) process

K. Okamoto, M. Tada, K. Ito, Y. Saito, S. Ishida and H. Hada

2010 International Conference on Solid State Devices and Materials, (Tokyo, Japan), pp.1110-1111., 

2010年09月

A new approach for improving operating margin of unipolar ReRAM using local minimum of reset voltage

Sakotsubo, Y. and Terai, M. and Kotsuji, S. and Saito, Y. and Tada, M. and Yabe, Y. and Hada, H.

Digest of Technical Papers - Symposium on VLSI Technology, 

2010年

　概要を見る

We propose a new approach for improving the operating margin of Ta 2O5/plasma oxidized TiO2 stacked unipolar ReRAM. It was found that the reset voltage (switching from low resistance state to high resistance state) can be minimized by using local minimum against the resistance of the low resistance state. In addition, weakening the plasma oxidation condition reduced the power consumption and the variation of reset voltage. Excellent operating margin and more than 105 switching cycle times was successfully demonstrated using the integrated device. © 2010 IEEE.

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Reliable solid-electrolyte crossbar switch for programmable logic device

Banno, N. and Sakamoto, T. and Tada, M. and Miyamura, M. and Yabe, Y. and Saito, Y. and Ishida, S. and Okamoto, K. and Hada, H. and Kasai, N. and Iguchi, N. and Aono, M.

Digest of Technical Papers - Symposium on VLSI Technology, 

2010年

　概要を見る

Solid-electrolyte crossbar switch (namely NanoBridge) with low programming current of 420μA and highly reliable ON state against pulsed-alternating current (AC) stress is demonstrated under practical operating conditions of a programmable logic device (PLD). The ON-state duration under a pulsed-AC stress is achieved >10 years at 150°C. The high reliability under AC originates from the fact that the stress induced by Cu+ ion migration at a negative bias is recovered by a positive bias. NanoBridge is applicable in a scaleddown, nonvolatile PLD for hp28 and beyond. © 2010 IEEE.

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Polymer Solid-Electrolyte (PSE) switch embedded in 90nm CMOS with forming-free and 10nsec programming for low power, Nonvolatile Programmable Logic (NPL)

Tada, M. and Sakamoto, T. and Okamoto, K. and Miyamura, M. and Banno, N. and Katoh, Y. and Ishida, S. and Iguchi, N. and Sakimura, N. and Hada, H.

Technical Digest - International Electron Devices Meeting, IEDM, 

2010年

　概要を見る

A novel polymer solid-electrolyte (PSE) switch, NanoBridge, featuring forming-free programming and an extremely high OFF/ON resistance ratio of 105 has been embedded in a 90nm-node CMOS by a fully logic-compatible process. Fast programming of 10nsec is also achieved in a 50nmφ 1k-bit-cell array by introducing the PSE, enabling a short and parallel programming. The OFF-state T50 lifetime at 125°C is extrapolated to be more than 10 years. The developed switch is a strong candidate for realizing a low-power and low-cost nonvolatile programmable logic (NPL). ©2010 IEEE.

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Fully Low Temperature (350oC) Processed Si PMOSFET with Poly-Ge Gate, Radical Oxidation of Gate-Oxide and Schottky Source/Drain for Monolithic 3D-ICs

M. Tada, J. H. Park, D. Kuzum, G. Thareja, Y. Nishi, and K. C. Saraswat

Material Research Society (MRS) 2009 Spring Meeting., 

2009年04月

Highly scalable nonvolatile TiOx/TaSiOy solid-electrolyte crossbar switch integrated in local interconnect for low power reconfigurable logic

Tada, M. and Sakamoto, T. and Tsuji, Y. and Banno, N. and Saito, Y. and Yabe, Y. and Ishida, S. and Terai, M. and Kotsuji, S. and Iguchi, N. and Aono, M. and Hada, H. and Kasai, N.

Technical Digest - International Electron Devices Meeting, IEDM, 

2009年

　概要を見る

A fully logic-compatible, nonvolatile crossbar switch using a novel dual-layer TiOx/TaSiOy solid-electrolyte, "NanoBridge", has been developed for the first time, which is scalable to 50 nm and beyond and keeps the extremely low ON-resistance of <100 Ω A key breakthrough is the dual-layer solid-electrolyte, in which TiOx works as an oxygen absorber as well as a superior ionic conductor, thus improving the yield, ON/OFF resistance ratio (>106) and cycling endurance (>103). The highly scalable 4 × 4 crossbar switch composed of NanoBridge integrated in a local Cu interconnect of a standard CMOS is successfully configured without select transistors. The nonvolatile solid-electrolyte, crossbar switch is a promising switch element for low power and low cost reconfigurable logic. © 2009 IEEE.

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Nonvolatile solid-electrolyte switch embedded into Cu interconnect

Sakamoto, T. and Tada, M. and Banno, N. and Tsuji, Y. and Saitoh, Y. and Yabe, Y. and Hada, H. and Iguchi, N. and Aono, M.

Digest of Technical Papers - Symposium on VLSI Technology, 

2009年

　概要を見る

A solid-electrolyte switch ("NanoBridge") has been successfully embedded into a 0.13-μm-node dual-damascene Cu interconnect using a highly reliable bilayer solidelectrolyte (TaSiO/Ta2O5) and a thin oxidation barrier, resulting in an excellent ON/OFF ratio (< 109) at a low ON resistance of 50Ω. The newly developed bilayer solid-electrolyte has improved the thermal stability during the BEOL process as well as improved electrical breakdown. The CMOS compatible NanoBridge is a promising switch to achieve high-performance and low-cost programmable LSIs.

Low Temperature (≦ 380ºC) and High Performance Ge CMOS Technology with Novel Source/Drain by Metal-Induced Dopants Activation and High-k/Metal Gate Stack for Monolithic 3D Integration

J. H. Park, M. Tada, D. Kuzum, P. Kapur, H. Y. Yu, H-.S. P. Wong, K. C. Saraswat

2008 IEEE International Electron Devices Meeting (IEDM), (San Francisco, USA), pp.943-946., 

2008年12月