Presentations -

Random Telegraph Signals in Very Narrow Channel MOSFET

Y. Shi, H. M. Bu, X. L. Yuan, Y. D. Zheng, H. Ishikuro, H. Majima, and T. Hiramoto

1999 Silicon Nanoelectronics Workshop (Kyoto, Japan) , 

1999.06

, 

Oral presentation (general)

Threshold Voltage Shift in Ultra-Narrow MOSFETs by Quantum Mechanical Narrow Channel Effect

H. Majima, H. Ishikuro, and T. Hiramoto

1999 Silicon Nanoelectronics Workshop (Kyoto, Japan) , 

1999.06

, 

Oral presentation (general)

Influence of Quantum Confinement Effects on Single Electron and Single Hole Transistors

Hiroki Ishikuro and Toshiro Hiramoto

1998 IEEE International Electron Devices Meeting (IEDM) (San Francisco, USA) , 

1998.12

, 

Oral presentation (general)

Effects of Body Reverse Pulse Bias on Geometric Component of Charge Pumping Current in FD SOI MOSFETs

Tran Ngoc Duyet, Hiroki Ishikuro, Makoto Takamiya, Takuya Saraya, and Toshiro Hiramoto

1998 IEEE International SOI Conference, (Florida, USA) , 

1998.10

, 

Oral presentation (general)

Measurement of Energetic and Lateral Distribution of Interface State Density in FD SOI MOSFETs

Tran Ngoc Duyet, Hiroki Ishikuro, Yi Shi, Takuya Saraya, Makoto Takamiya, and Toshiro Hiramoto

1998 International Conference on Solid State Devices and Materials (SSDM'98) (Hiroshima, Japan) , 

1998.09

, 

Oral presentation (general)

Characteristics of Narrow Channel MOSFET Memory Based on Silicon Nanocrystals

Yi Shi, Kenichi Saito, Hiroki Ishikuro, and Toshiro Hiramoto

1998 International Conference on Solid State Devices and Materials (SSDM'98) (International Conference Center Hiroshima) , 

1998.09

, 

Oral presentation (general)

The Origin of Tunnel Barrier in Silicon Single Electron Transistor", International Conference on Physics of Semiconductors (ICPS)

Hiroki Ishikuro and Toshiro Hiramoto

International Conference on Physics of Semiconductors (ICPS) (Jerusalem, Israel) , 

1998.08

, 

Poster presentation

Effects of Interface Traps on Charge Retention Characteristics in Silicon-Quantum-Dot-Based MOS Diodes

Y. Shi, K. Saito, H. Ishikuro, and T. Hiramoto

1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures (Sapporo, Japan) , 

1998.06

, 

Oral presentation (general)

Energy Spectrum of the Quantum-Dot in a Si Single-Electron-Device

Hiroki Ishikuro and Toshiro Hiramoto

IEEE 55th Annual Device Research Conference (Colorado, USA) , 

1998.06

, 

Oral presentation (general)

Narrow Channel MOS Memory Based on Silicon Nano-Crystals

K. Saito, Y. Shi, H. Ishikuro, and T. Hiramoto

1998 IEEE Silicon Nanoelectronics Workshop (Hawaii, USA) , 

1998.06

, 

Oral presentation (general)

Fabrication of Nano-Scale Point Contact MOSFETs Using Micrometer-Scale Design Rule

H. Ishikuro and T. Hiramoto

1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures (Sapporo, Japan) , 

1998.06

, 

Oral presentation (general)

Fabrication of Si Point Contact MOSFETs Acting as Single Electron Transistors at Room Temperature

Hiroki Ishikuro and Toshiro Hiramoto

Silicon Nanoelectronics Workshop (Kyoto, Japan) , 

1997.06

, 

Oral presentation (general)

Room Temperature Coulomb Blockade and Low Temperature Hopping Transport in a Multiple-Dot-Channel MOSFET

T. Hiramoto, H. Ishikuro, T. Fujii, G. Hashiguchi, and T. Ikoma

1996 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures (Sapporo, Japan) , 

1996.11

, 

Oral presentation (general)

Floating Body Effects in 0.15 μm Partially Depleted SOI MOSFETs below 1 V

T. Saraya, M. Takamiya, T. N. Duyet, T. Tanaka, H. Ishikuro, T. Hiramoto, and T. Ikoma

IEEE International SOI Conference (Florida, USA) , 

1996.10

, 

Oral presentation (general)

Fabrication of Si Nano-Structures by Anisotropic Etching for Single Electron Device Applications

T. Hiramoto, H. Ishikuro, T. Fujii, T. Saraya, G. Hashiguchi, and T. Ikoma

9th International MicroProcess Conference (Fukuoka, Japan) , 

1996.07

, 

Oral presentation (general)

Coulomb Blockade in a Weakly Coupled Multiple-Dot-Channel MOSFET

H. Ishikuro, T. Fujii, T. Saraya, G. Hashiguchi, T. Hiramoto, and T. Ikoma

International Conference on Physics of Semiconductors(ICPS) (Berlin, Germany) , 

1996.07

, 

Poster presentation

Extremely Large Amplitude of Random Telegram Signals in a Very Narrow Split-Gate MOSFET at Low Temperatures

H. Ishikuro, T. Saraya, T. Hiramoto, and T. Ikoma

International Conference on Solid State Devices and Materials (SSDM) (Osaka, Japan) , 

1995.08

, 

Poster presentation