Presentations -
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Double Thresholding Schemeを用いた1V 299uW Flashing UWBトランシーバ
ISHIKURO HIROKI
電子情報通信学会集積回路研究会 (北海道) ,
2006.08,Oral presentation (general), 電子情報通信学会
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A 1-V 299µW Flashing UWB Transceiver Based on Double Thresholding Scheme
Atit Tamtrakarn, Hiroki Ishikuro, Koichi Ishida, Makoto Takamiya, Takayasu Sakurai
Symposium on VLSI Circuits (Honolulu, Hawaii) ,
2006.06,Oral presentation (general), IEEE
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スケーリングされたトランジスタに適応した高耐圧オペアンプ設計
ISHIKURO HIROKI
電子情報通信学会集積回路研究会 (東京) ,
2006.01,Oral presentation (general), 電子情報通信学会
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1.2V動作可能な中心周波数可変複素バンドパスフィルタ
ISHIKURO HIROKI
電子情報通信学会集積回路研究会 (高知) ,
2005.12,Oral presentation (general), 電子情報通信学会
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Analog and Digital Circuit Systems for Wireless Access Applications
Hiroki Ishikuro
Microwave Workshops and Exhibition 2005 (横浜) ,
2005.12,Oral presentation (general)
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An Outside-Rail Opamp Design Targeting for Future Scaled Transistors
K.Ishida, A.Tamtrakarn, H.Ishikuro, and T.Sakurai
Asian Solid-State Circuits Conference (A-SSCC) 2005 (Hsinchu, Taiwan) ,
2005.11,Oral presentation (general), IEEE
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CMOS LC-VCOの位相雑音最小化
ISHIKURO HIROKI
電子情報通信学会集積回路研究会 (宮城) ,
2005.10,Oral presentation (general), 電子情報通信学会
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A Phase Noise Minimization of CMOS VCOs over Wide Tuning Range and Large PVT Variations
D. Miyashita, H. Ishikuro, S. Kousai, H. Kobayashi, H. Majima, K. Agawa, and M.Hamada
Custom Integrated Circuits Conference (CICC) (San Jose, California) ,
2005.09,Oral presentation (general), IEEE
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A 1.2-V CMOS Complex Bandpass Filter with a Tunable Center Frequency
H. Majima, H. Ishikuro, K. Agawa, and M. Hamada
European Solid-State Circuits Conference (ESSCIRC) (Grenoble, France) ,
2005.09,Oral presentation (general), IEEE Electron Devices Society
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ディジタルI/Qミスマッチ補正回路を搭載したlow-IF方式シングルチップCMOS Bluetooth-EDR送信機
ISHIKURO HIROKI
電子情報通信学会集積回路研究会 (函館) ,
2005.08,Oral presentation (general), 電子情報通信学会
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Low frequency spurs of VCO due to noise propagation from digital I/O's and their effects on performance of Bluetooth SoC
S. Kousai, K. Agawa, H. Ishikuro, H. Majima, H. Kobayashi, D. Miyashita, T. Yoshino, Y. Hama, M. Hamada
Radio Frequency Integrated Circuits (RFIC) Symposium (Long Beach, California) ,
2005.06,Oral presentation (general), IEEE
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A Low-IF CMOS Single-Chip Bluetooth EDR Transmitter with Digital I/Q Mismatch Trimming Circuit
H. Ishikuro, D. Miyashita, T. Shimada, T. Tanzawa, S. Kousai, H. Kobayashi, H. Majima, K. Agawa, M.Hamada, and F. Hatori
Symposium on VLSI Circuits (京都) ,
2005.06,Oral presentation (general), IEEE
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Temperature-Compensated CMOS LC-VCO Enabling the Direct Modulation Architecture in 2.4-GHz GFSK Transmitter
T. Tanzawa, H. Shibayama, R. Terauchi, K. Hisano, H. Ishikuro, S. Kousai, H.Majima, H. Kobayashi, T. Takayama, K. Agawa, M. Koizumi, and F. Hatori
IEEE Custom Integrated Circuits Conference (CICC) (Florida, USA) ,
2004.10,Oral presentation (general), IEEE
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1.5MHz-IF受信方式および直接変調送信方式によるシングルチップCMOS Bluetoothトランシーバ
ISHIKURO HIROKI
電子情報通信学会集積回路研究会 (金沢) ,
2003.05,Oral presentation (general), 電子情報通信学会
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A Single-Chip CMOS Bluetooth Transceiver with 1.5-MHz IF and Direct Modulation Transmitter
Hiroki Ishikuro M. Hamada, K. Agawa, S. Kousai, H. Kobayashi, D.M.Nguyen, and F. Hatori
International Solid-State Circuits Conference (ISSCC) (San Francisco, USA) ,
2003.02,Oral presentation (general), IEEE
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Large Electron Addition Energy above 250 meV in the Silicon Quantum Dot in a Single Electron Transitor
T. Hiramoto, N. Takahashi, H. Ishikuro, and M. Saitoh
2000 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures (Sapporo, Japan) ,
2000.09,Oral presentation (general)
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Threshold Voltage Increase by Quantum Mechanical Narrow Channel Effect in Ultra-Narrow MOSFETs
H. Majima, H. Ishikuro, and T. Hiramoto
1999 IEEE International Electron Devices Meeting (IEDM) (Washington D.C., USA) ,
1999.12,Oral presentation (general)
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A Directional Current Switch Using Silicon Single Electron Transistors Controlled by Charge Injection into Silicon Nano-Crystal Floating Dots
N. Takahashi, H. Ishikuro, and T. Hiramoto
1999 IEEE International Electron Devices Meeting (IEDM) (Washington D.C., USA) ,
1999.12,Oral presentation (general)
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Characteristics of Silicon Single Electron Transistors Controlled by Charge Injection into Silicon Nano-Crystal Floating Dots
N. Takahashi, H. Ishikuro, and T. Hiramoto
1999 International Conference on Solid State Devices and Materials (SSDM'99) (Tokyo, Japan) ,
1999.09,Oral presentation (general)
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Characteristics Distribution of Narrow Channel MOSFET Memories with Silicon Nano-Crystal Floating Gates
E. Nagata, N. Takahashi, H. Ishikuro, and T. Hiramoto
1999 International Microprocesses and Nanotechnology Conference (yokohama, Japan) ,
1999.07,Oral presentation (general)