研究者詳細 - フォンス，　ポール

フォンス，　ポール (フォンス　ポール)

Fons, Paul

写真a

所属（所属キャンパス）: 理工学部電気情報工学科（矢上）

職名: 教授

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電子材料と光材料のスプリンガーハンドブック

ポールフォンス, Springer, 2017年, ページ数： xxxvi, 1536 p.

担当範囲: 相変化メモリ材料
Phase change materials : science and applications

Raoux, Simone, Wutting, Matthias, Springer, 2009年, ページ数： xxii, 446 p.

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Photo‐Induced Tellurium Segregation in MoTe 2

Takumi Fukuda, Ryota Kaburauchi, Yuta Saito, Kotaro Makino, Paul Fons, Keiji Ueno, Muneaki Hase

physica status solidi (RRL) – Rapid Research Letters （Wiley) 16 （ 9 ） 2100633 - 2100633 2022年06月

ISSN 1862-6254
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Improved Ordering of Quasi-Two-Dimensional MoS<inf>2</inf>via an Amorphous-to-Crystal Transition Initiated from Amorphous Sulfur-Rich MoS<inf>2+ x</inf>

Milos Krbal, Vit Prokop, Jan Prikryl, Jhonatan Rodriguez Pereira, Igor Pis, Alexander V. Kolobov, Paul J. Fons, Yuta Saito, Shogo Hatayama, Yuji Sutou

Crystal Growth and Design 22 （ 5 ） 3072 - 3079 2022年05月

ISSN 1528-7483

　概要を見る

The synthesis of stoichiometric two-dimensional (2D) transition-metal dichalcogenides (TMDC) over large areas remains challenging. Using a combination of X-ray diffraction and X-ray absorption spectroscopy, we demonstrate the advantages of using a thin amorphous layer of S-rich MoS2(MoS4in this paper) for the growth of well-ordered crystalline MoS2films via annealing at 900 °C. In contrast to the crystallization of stoichiometric amorphous MoS2, the crystallization of the as-deposited amorphous MoS4phase shows the strong preferred ordering of layered MoS2on a Si/SiOxnontemplating substrate with the dominant (002) crystallographic plane and accompanying Kiessig fringes, which indicate the improved crystallinity of the MoS2layers. A similar effect can only be achieved by the templated crystallization of an amorphous MoS2thin film deposited on a c-plane sapphire substrate. We suggest that the crystal growth improvement originates from the lower coordination number (CN) of the Mo atoms in the MoS4amorphous phase (CN = 4) in comparison with that of amorphous MoS2(CN = 6) and the gradual release of free sulfur atoms from the thin film during crystallization.
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The formation of a one-dimensional van der Waals selenium crystal from the three-dimensional amorphous phase: A spectroscopic signature of van der Waals bonding

Milos Krbal, Alexander V. Kolobov, Paul Fons, Yuta Saito, George Belev, Safa Kasap

Applied Physics Letters 2022年01月
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Phase control of sputter-grown large-area MoTe2 films by preferential sublimation of Te: amorphous, 1T′ and 2H phases

Shogo Hatayama, Yuta Saito, Kotaro Makino, Noriyuki Uchida, Yi Shuang, Shunsuke Mori, Yuji Sutou, Milos Krbal, Paul Fons

Journal of Materials Chemistry C （Royal Society of Chemistry (RSC)) 10 （ 29 ） 10627 - 10635 2022年

ISSN 2050-7526

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The crystallization mechanism of sputter-deposited amorphous Mo–Te film is revealed enabling the large-area growth of 2D materials.
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Dimensional transformation of chemical bonding during crystallization in a layered chalcogenide material

Yuta Saito, Shogo Hatayama, Yi Shuang, Paul Fons, Alexander V. Kolobov, Yuji Sutou

Scientific Reports （NATURE RESEARCH) 11 （ 1 ） 4782 - 4782 2021年12月

研究論文（学術雑誌）, 共著, ISSN 2045-2322

　概要を見る

Two-dimensional (2D) van der Waals (vdW) materials possess a crystal structure in which a covalently-bonded few atomic-layer motif forms a single unit with individual motifs being weakly bound to each other by vdW forces. Cr Ge Te is known as a 2D vdW ferromagnetic insulator as well as a potential phase change material for non-volatile memory applications. Here, we provide evidence for a dimensional transformation in the chemical bonding from a randomly bonded three-dimensional (3D) disordered amorphous phase to a 2D bonded vdW crystalline phase. A counterintuitive metastable “quasi-layered” state during crystallization that exhibits both “long-range order and short-range disorder” with respect to atomic alignment clearly distinguishes the system from conventional materials. This unusual behavior is thought to originate from the 2D nature of the crystalline phase. These observations provide insight into the crystallization mechanism of layered materials in general, and consequently, will be useful for the realization of 2D vdW material-based functional nanoelectronic device applications. 2 2 6
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不揮発性メモリ用Cr₂Ge₂Te₆相変化材料の局所構造の解明

畑山祥吾, YI Shuang, FONS Paul, FONS Paul, 齊藤雄太, KOLOBOV Alexander V., KOLOBOV Alexander V., 小林啓介, 進藤怜史, 安藤大輔, 須藤祐司

応用物理学会春季学術講演会講演予稿集(CD-ROM) 67th 2020年

その他, 共著
不揮発性相変化メモリ用遷移金属カルコゲナイド相変化材料の開発

齊藤雄太, 畑山祥吾, YI Shuang, 進藤怜史, FONS Paul, KOLOBOV Alexander V., 小林啓介, 小林啓介, 小林啓介, 須藤祐司

応用物理学会春季学術講演会講演予稿集(CD-ROM) 66th 2019年

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1T’-MoTe₂バルク結晶におけるコヒーレントフォノンの観測

福田拓未, 牧野孝太郎, 齊藤雄太, FONS Paul, KOLOBOV Alexander V., KOLOBOV Alexander V., 上野啓司, MONDAL Richarj, 長谷宗明

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 80th 2019年

その他, 共著
スパッタ法による高配向Bi-Te薄膜の成膜と電子状態解析

齊藤雄太, FONS Paul, 牧野孝太郎, MITROFANOV Kirill V., 上杉文彦, 竹口雅樹, KOLOBOV Alexander V., 富永淳二

日本金属学会講演概要(CD-ROM) 164th 2019年

その他, 共著, ISSN 2433-3093
Erratum: Effects of RbF postdeposition treatment and heat-light soaking on the metastable acceptor activation of CuInSe<inf>2</inf> thin film photovoltaic devices (Applied Physics Letters (2018) 113 (063901) DOI: 10.1063/1.5031898)

Ishizuka S., Shibata H., Nishinaga J., Kamikawa Y., Fons P.

Applied Physics Letters (Applied Physics Letters) 113 ( 11 ) 2018年09月

ISSN 00036951

　概要を見る

© 2018 Author(s). We have found an error in Fig. 3(d) in the original published version of our paper.1 The annotations -6V and +3.0V are incorrect and should be +0.6V and -30 V, respectively. Figure 1 is a corrected version for the original Fig. 3(d). (Figure Presented).
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