Fons, Paul

写真a

Affiliation

Faculty of Science and Technology, Department of Electronics and Electrical Engineering (Yagami)

Position

Professor

 

Books 【 Display / hide

  • Springer handbook of electronic and photonic materials

    Kasap, S. O. (Safa O.), Capper, Peter, Springer, 2017,  Page: xxxvi, 1536 p.

    Scope: Chapter 46: Phase-Change Memory Materials

  • Phase change materials : science and applications

    Raoux, Simone, Wutting, Matthias, Springer, 2009,  Page: xxii, 446 p.

Papers 【 Display / hide

  • Photoinduced Structural Dynamics of 2H-MoTe<sub>2</sub> Under Extremely High-Density Excitation Conditions

    Takumi Fukuda, Uta Ozaki, Samuel Jeong, Yusuke Arashida, Kaito En-ya, Shoji Yoshida, Paul J. Fons, Jun-ichi Fujita, Keiji Ueno, Muneaki Hase, Masaki Hada

    The Journal of Physical Chemistry C (American Chemical Society (ACS))   2023.07

    ISSN  1932-7447

  • Discovery of a metastable van der Waals semiconductor via polymorphic crystallization of an amorphous film

    Yuta Saito, Shogo Hatayama, Wen Hsin Chang, Naoya Okada, Toshifumi Irisawa, Fumihiko Uesugi, Masaki Takeguchi, Yuji Sutou, Paul Fons

    Materials Horizons  2023

  • Photo‐Induced Tellurium Segregation in MoTe 2

    Takumi Fukuda, Ryota Kaburauchi, Yuta Saito, Kotaro Makino, Paul Fons, Keiji Ueno, Muneaki Hase

    physica status solidi (RRL) – Rapid Research Letters (Wiley)  16 ( 9 ) 2100633 - 2100633 2022.06

    ISSN  1862-6254

  • Improved Ordering of Quasi-Two-Dimensional MoS<inf>2</inf>via an Amorphous-to-Crystal Transition Initiated from Amorphous Sulfur-Rich MoS<inf>2+ x</inf>

    Milos Krbal, Vit Prokop, Jan Prikryl, Jhonatan Rodriguez Pereira, Igor Pis, Alexander V. Kolobov, Paul J. Fons, Yuta Saito, Shogo Hatayama, Yuji Sutou

    Crystal Growth and Design 22 ( 5 ) 3072 - 3079 2022.05

    ISSN  1528-7483

     View Summary

    The synthesis of stoichiometric two-dimensional (2D) transition-metal dichalcogenides (TMDC) over large areas remains challenging. Using a combination of X-ray diffraction and X-ray absorption spectroscopy, we demonstrate the advantages of using a thin amorphous layer of S-rich MoS2(MoS4in this paper) for the growth of well-ordered crystalline MoS2films via annealing at 900 °C. In contrast to the crystallization of stoichiometric amorphous MoS2, the crystallization of the as-deposited amorphous MoS4phase shows the strong preferred ordering of layered MoS2on a Si/SiOxnontemplating substrate with the dominant (002) crystallographic plane and accompanying Kiessig fringes, which indicate the improved crystallinity of the MoS2layers. A similar effect can only be achieved by the templated crystallization of an amorphous MoS2thin film deposited on a c-plane sapphire substrate. We suggest that the crystal growth improvement originates from the lower coordination number (CN) of the Mo atoms in the MoS4amorphous phase (CN = 4) in comparison with that of amorphous MoS2(CN = 6) and the gradual release of free sulfur atoms from the thin film during crystallization.

  • The formation of a one-dimensional van der Waals selenium crystal from the three-dimensional amorphous phase: A spectroscopic signature of van der Waals bonding

    Milos Krbal, Alexander V. Kolobov, Paul Fons, Yuta Saito, George Belev, Safa Kasap

    Applied Physics Letters  2022.01

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Reviews, Commentaries, etc. 【 Display / hide

  • Understanding local structure of Cr2Ge2Te6 phase change material for non-volatile memory application

    畑山祥吾, YI Shuang, FONS Paul, FONS Paul, 齊藤雄太, KOLOBOV Alexander V., KOLOBOV Alexander V., 小林啓介, 進藤怜史, 安藤大輔, 須藤祐司

    応用物理学会春季学術講演会講演予稿集(CD-ROM) 67th 2020

    Other, Joint Work

  • 不揮発性相変化メモリ用遷移金属カルコゲナイド相変化材料の開発

    齊藤雄太, 畑山祥吾, YI Shuang, 進藤怜史, FONS Paul, KOLOBOV Alexander V., 小林啓介, 小林啓介, 小林啓介, 須藤祐司

    応用物理学会春季学術講演会講演予稿集(CD-ROM) 66th 2019

    Other, Joint Work

  • スパッタ法による高配向Bi-Te薄膜の成膜と電子状態解析

    齊藤雄太, FONS Paul, 牧野孝太郎, MITROFANOV Kirill V., 上杉文彦, 竹口雅樹, KOLOBOV Alexander V., 富永淳二

    日本金属学会講演概要(CD-ROM) 164th 2019

    Other, Joint Work,  ISSN  2433-3093

  • 1T’-MoTe2バルク結晶におけるコヒーレントフォノンの観測

    福田拓未, 牧野孝太郎, 齊藤雄太, FONS Paul, KOLOBOV Alexander V., KOLOBOV Alexander V., 上野啓司, MONDAL Richarj, 長谷宗明

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 80th 2019

    Other, Joint Work

  • Erratum: Effects of RbF postdeposition treatment and heat-light soaking on the metastable acceptor activation of CuInSe<inf>2</inf> thin film photovoltaic devices (Applied Physics Letters (2018) 113 (063901) DOI: 10.1063/1.5031898)

    Ishizuka S., Shibata H., Nishinaga J., Kamikawa Y., Fons P.

    Applied Physics Letters (Applied Physics Letters)  113 ( 11 )  2018.09

    ISSN  00036951

     View Summary

    © 2018 Author(s). We have found an error in Fig. 3(d) in the original published version of our paper.1 The annotations -6V and +3.0V are incorrect and should be +0.6V and -30 V, respectively. Figure 1 is a corrected version for the original Fig. 3(d). (Figure Presented).

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Research Projects of Competitive Funds, etc. 【 Display / hide

  • Understanding the crystallization mechanism of amorphous van der Waals layered materials

    2019.04
    -
    2022.03

    MEXT,JSPS, Grant-in-Aid for Scientific Research, Grant-in-Aid for Scientific Research (B), Principal investigator

 

Courses Taught 【 Display / hide

  • SOLID STATE ENGINEERING

    2024

  • SEMINOR IN ELECTRONICS AND INFOTMATION ENGINEERING(2)

    2024

  • RECITATION IN ELECTRONICS AND INFORMATION ENGINEERING

    2024

  • OPTICAL CONTROL OF QUANTUM SYSTEMS

    2024

  • LABORATORIES IN ELECTRONICS AND INFORMATION ENGINEERING(1)

    2024

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