Noda, Kei

写真a

Affiliation

Faculty of Science and Technology, Department of Electronics and Electrical Engineering ( Yagami )

Position

Professor

Related Websites

External Links

Academic Background 【 Display / hide

  • 1998.03

    Kyoto University, Faculty of Engineering, Department of Electronics

    University, Graduated

  • 2000.03

    Kyoto University, Graduate School, Division of Engineering, Department of Electronic Science and Engineering

    Graduate School, Completed, Master's course

  • 2002.11

    Kyoto University, Graduate School, Division of Engineering, Department of Electronic Science and Engineering

    Graduate School, Completed, Doctoral course

Academic Degrees 【 Display / hide

  • Doctor of Engineering, Kyoto University, Coursework, 2002.11

 

Research Areas 【 Display / hide

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials (Electron/Electric Material Engineering)

  • Nanotechnology/Materials / Thin film/surface and interfacial physical properties

  • Nanotechnology/Materials / Applied physical properties

 

Papers 【 Display / hide

  • Visible-Light-Driven Photocatalytic Polyethylene Degradation Using WO3 Nanoflowers Without Hot-Press Processing

    Ibuki Koizumi, Kosei Ito, Kei Noda

    Chemphotochem 10 ( 3 ) e202500355 2026.03

    Research paper (scientific journal), Joint Work, Last author, Accepted

     View Summary

    Plastic waste poses significant environmental and health challenges. Photocatalytic degradation using sunlight offers a promising solution; however, many previous studies have relied on impractical conditions, such as employing ultraviolet light irradiation and hot-pressed mixture of plastics and photocatalysts. In this study, we explored a simple and practical method for plastic degradation under visible light. A visible-light-responsive tungsten trioxide (WO<inf>3</inf>) powder with a nanoflower structure was simply mixed with polyethylene (PE) powder without hot pressing and then irradiated with visible light. Effective degradation of PE was observed, and the reaction proceeded stably under prolonged irradiation. In contrast, a hot-pressed WO<inf>3</inf>–PE sample exhibited reduced degradation efficiency, likely due to the collapse of the nanoflower structure, which diminished light absorption and surface activity. These findings demonstrate that a simple powder mixture can enable efficient plastic degradation under visible light, presenting a practical strategy for photocatalytic plastic waste treatment and contributing to sustainable environmental solutions.

  • Efficient photocatalytic properties using the S-scheme charge transfer of WO3/C3N5 without precious metals

    Kosei Ito, Shuta Fujioka, Shusuke Yoneyama, Matthis Richard Vosberg, Paul Fons, Kei Noda

    Applied Surface Science 732   166558 2026.03

    Research paper (scientific journal), Last author, Accepted

  • p+-i-p+ Type poly(3-hexylthiophene-2,5-diyl) thin-film transistors prepared by transfer printing with elastomer stamp

    Kazuki Takayama, Koushirou Igata, Yuuichi Nakajima, Taiki Ito, Kei Noda

    Journal of Materials Science: Materials in Electronics (Springer Science+Business Media, LLC)  36 ( 21 ) 1353 2025.07

    Research paper (scientific journal), Joint Work, Last author, Corresponding author, Accepted,  ISSN  09574522

     View Summary

    In organic thin-film transistors (OTFTs), carrier doping is a versatile technique to control and improve their device characteristics. In this study, bottom-gate, bottom-contact (BGBC) p-channel transistors comprised by contact electrodes of highly p-doped layer (p<sup>+</sup>) and a non-doped, intrinsic semiconductor layer (i), so-called p<sup>+</sup>-i-p<sup>+</sup> type transistors, were newly fabricated by using the transfer printing of poly(3-hexylthiophene-2,5-diyl) (P3HT) films. A uniform P3HT thin layer was formed onto a poly(dimethylsiloxane) (PDMS) elastomer by the push coating method, followed by the peel-off and transfer process of P3HT micropatterns via elastomer stamping with the aid of prepatterned master substrates. Source-drain p<sup>+</sup> layers were prepared by liquid-phase doping of the P3HT micropatterns with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) as an acceptor dopant. Then, undoped i stripes were deposited onto the p<sup>+</sup> contact electrode patterns by the transfer printing, which enabled us to construct p<sup>+</sup>-i-p<sup>+</sup> type polymer transistors with hydrophobic CYTOP-coated SiO<inf>2</inf> gate insulators. The prepared devices presented p-channel, normally-off operation with no gate-sweep hysteresis, suggesting that the appropriate combination of printing and molecular doping techniques can pave the way toward the device design of all-organic transistors.

  • Impact of synthesis temperatures on photocatalytic activity of graphitic carbon nitride

    Pratiksha D. Donolikar, Vaishali A. Sawant, Kei Noda, Shivaji B. Sadale

    Journal of Materials Science: Materials in Electronics (Springer Science+Business Media, LLC)  36   1162 2025.07

    Research paper (scientific journal), Joint Work, Accepted

  • Post-Annealing Effects in Low-Voltage Organic Thin-Film Transistors Based on a Vacuum-Deposited S‑Shaped Dinaphthothienothiophene Derivative

    Kei Noda, Ute Zschieschang, Hagen Klauk

    ACS Applied Electronic Materials (American Chemical Society)  7 ( 14 ) 6411 - 6419 2025.07

    Research paper (scientific journal), Joint Work, Lead author, Corresponding author, Accepted

     View Summary

    Post-annealing effects in low-voltage organic thin-film transistors (TFTs) based on vacuum-deposited films of the liquid-crystalline small-molecule semiconductor 3,10-didecylnaphtho[2,1-b]naphtho[1′,2′:4,5]thieno[2,3-d]thiophene (S-DNTT-10) were investigated. Bottom-contact (BC) and top-contact (TC) TFTs with gold source and drain contacts were prepared by using a high-capacitance gate dielectric based on aluminum oxide and an alkylphosphonic acid self-assembled monolayer. During S-DNTT-10 deposition, the substrate was at room temperature. In BC devices, post-annealing at a temperature of 160 °C leads to a reduction in the number of three-dimensional aggregates on the surface and to a larger grain size of the S-DNTT-10 films, leading to smaller contact resistance, larger intrinsic channel mobility, and better long-term stability in comparison with the TFTs prepared without post-annealing. In TC devices, post-annealing performed before the deposition of the source/drain contacts is found to benefit the initial TFT performance, while post-annealing performed after the source/drain deposition turns out to be better for the long-term stability of the TFTs, presumably due to the fact that the thermally induced morphological changes in the S-DNTT-10 thin films are affected by the presence of the metal contacts (or lack thereof). This study suggests that post-annealing can be of great use for improving the characteristics of organic TFTs based on vacuum-deposited liquid-crystalline organic semiconductors.

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Reviews, Commentaries, etc. 【 Display / hide

  • 陽極酸化による酸化鉄ナノ チューブアレイの形成と気相反応場での光触媒機能

    野田 啓,柵木 光

    Denki Kagaku (The Electrochemical Society of Japan)  89 ( 4 ) 340 - 345 2021.12

    Article, review, commentary, editorial, etc. (scientific journal), Joint Work

  • 有機電界効果トランジスタにおける電気特性評価技術の現状について

    野田 啓

    Molecular Electronics and Bioelectronics 28 ( 4 ) 242 - 245 2017.11

    Article, review, commentary, editorial, etc. (scientific journal), Single Work

  • Tips for organic semiconductor experiments

    NODA KEI

    応用物理 86 ( 1 ) 51 - 54 2017.01

    Article, review, commentary, editorial, etc. (scientific journal), Single Work

  • Introductory Remarks-Background of Organic Electronics and Importance of Molecular Control Techniques

    NODA KEI

    The Journal of The Institute of Electrical Engineers of Japan 136 ( 2 ) 72 - 73 2016.02

    Article, review, commentary, editorial, etc. (scientific journal), Single Work

  • Charge Carrier Doping for Organic Transistors

    NODA KEI

    The Journal of The Institute of Electrical Engineers of Japan 136 ( 2 ) 78 - 81 2016.02

    Article, review, commentary, editorial, etc. (scientific journal), Single Work

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Presentations 【 Display / hide

  • 異なる透明導電性基板上に直接成膜したC3N5光電極における大きなオンセット電位変化

    梅澤 優生,吉井 悠真,伊藤 皇聖,野田 啓

    [Domestic presentation]  電気化学会第93回大会 (東京理科大学 野田キャンパス) , 

    2026.03

    Oral presentation (general)

  • 酸化チタン/酸化タングステンナノ複合体の全電気化学形成とエレクトロクロミック特性

    及川 尚紀, 原田 豪, 野田 啓

    [Domestic presentation]  第73回応用物理学会春季学術講演会 (東京科学大学 大岡山キャンパス) , 

    2026.03

    Oral presentation (general)

  • 逆構造高分子OLEDにおける自己加熱に基づく抵抗変化現象

    西嶋 快斗,石黒 蒼,野田 啓

    [Domestic presentation]  第73回応用物理学会春季学術講演会 (東京科学大学 大岡山キャンパス) , 

    2026.03

    Poster presentation

  • 熱化学気相成長により堆積した高分子状窒化炭素薄膜の抵抗変化メモリ特性

    杉山慶悟, 柳澤 宙輝, 野田 啓

    [Domestic presentation]  第73回応用物理学会春季学術講演会 (東京科学大学 大岡山キャンパス) , 

    2026.03

    Poster presentation

  • g-C3N4/DPP-DTT薄膜ヘテロ接合のフォトダイオード特性

    柳澤 宙輝, 野田 啓

    [Domestic presentation]  第73回応用物理学会春季学術講演会 (東京科学大学 大岡山キャンパス) , 

    2026.03

    Poster presentation

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Research Projects of Competitive Funds, etc. 【 Display / hide

  • Thin film formation of polymeric carbon nitride structure with precisely-designed precursors and its photoelectrochemical application

    2025.04
    -
    2028.03

    基盤研究(B), Principal investigator

  • Organic semiconductor device design considering electrothermal properties toward high current switching

    2022.06
    -
    2025.03

    MEXT,JSPS, Grant-in-Aid for Scientific Research, 挑戦的研究(萌芽), Principal investigator

  • 前駆体の精密設計に基づく二次元窒化炭素構造体の薄膜形成と光応答型膜反応器への応用

    2019.04
    -
    2023.03

    Grant-in-Aid for Scientific Research, Principal investigator

  • Investigation of gas phase photocatalysis on nanostructured semiconductor surfaces and its application toward artificial photosynthesis

    2017.06
    -
    2020.03

    Grant-in-Aid for Scientific Research, Principal investigator

  • 有機半導体薄膜に関する国際標準化

    2014.04
    -
    2017.02

    Commissioned research, Coinvestigator(s)

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Intellectual Property Rights, etc. 【 Display / hide

  • 有機薄膜トランジスタ

    Date applied: 2013-112504  2013.05 

    Patent, Joint

  • 水素生成・分離一体型機能性薄膜及びその製造方法

    Date applied: 2011-013778  2011.01 

    Patent, Joint

Awards 【 Display / hide

  • IEC 1906 Award

    2017.10, International Electrotechnical Commission (IEC)

    Type of Award: International academic award (Japan or overseas)

  • 2007年度(第7回)船井情報科学奨励賞(エレクトロニクス部門)

    野田 啓, 2008.04, 船井情報科学振興財団

    Type of Award: Award from publisher, newspaper, foundation, etc.

  • Research fellowship from Alexander von Humboldt Foundation

    2004.04, Alexander von Humboldt Foundation

    Type of Award: Award from publisher, newspaper, foundation, etc.

  • 1st International Conference on Molecular Electronics and Bioelectronics (M&BE1), Young Scientist Award

    Kei Noda, 2001.03, 1st International Conference on Molecular Electronics and Bioelectronics (M&BE1)

    Type of Award: Award from Japanese society, conference, symposium, etc.

  • 第47回応用物理学関係連合講演会(応用物理学会) 講演奨励賞

    野田 啓, 2000.03, 応用物理学会

    Type of Award: Award from Japanese society, conference, symposium, etc.

Other 【 Display / hide

  • 2017年06月

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    IEC/TS 62607-5-3 Ed 1.0 Nanomanufacturing - Key control characteristics - Part 5-3: Thin-film organic/nano electronic devices - Measurements of charge carrier concentration, Project Leader

  • 2016年02月

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    The Journal of The Institute of Electrical Engineers of Japan, 2016 Vol.136, No.2, Special Issue on "Functional Organic Materials Leading The Next Generation -Molecular Control and Its Electronics Applications-" Guest Editor

  • 2014年09月

     View Details

    IEC/TS 62607-5-1 Ed 1.0 Nanomanufacturing - Key control characteristics - Part 5-1: Thin-film organic/nano electronic devices - Carrier transport measurements

 

Courses Taught 【 Display / hide

  • PHYSICS C

    2025

  • ORGANIC ELECTRONIC MATERIALS AND DEVICES

    2025

  • MATERIALS FOR ELECTRONICS AND ELECTRICAL ENGINEERING

    2025

  • LABORATORY IN SCIENCE

    2025

  • LABORATORIES IN ELECTRONICS AND INFORMATION ENGINEERING(2)

    2025

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Courses Previously Taught 【 Display / hide

  • Laboratory in science

    Keio University

    2018.04
    -
    2019.03

    Spring Semester, Laboratory work/practical work/exercise

  • Electrical and electronic materials

    Keio University

    2018.04
    -
    2019.03

    Autumn Semester, Lecture

  • Laboratories in electronics and electrical engineering (2)

    Keio University

    2018.04
    -
    2019.03

    Autumn Semester, Laboratory work/practical work/exercise

  • Organic Electronic Materials and Devices

    Keio University

    2018.04
    -
    2019.03

    Autumn Semester, Lecture

  • 物理学C, D

    Keio University

    2018.04
    -
    2019.03

    Autumn Semester

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Educational Activities and Special Notes 【 Display / hide

  • 京都大学 大学院 工学研究科 非常勤講師

    2025.06
    -
    2025.09

    , Special Affairs

  • 京都大学 大学院 工学研究科 非常勤講師

    2023.04
    -
    2023.09

    , Special Affairs

  • 三重大学 大学院 工学研究科 非常勤講師

    2022.04
    -
    2022.09

    , Special Affairs

  • 京都大学 大学院 工学研究科 非常勤講師

    2021.04
    -
    2021.09

    , Special Affairs

  • 京都大学 大学院 工学研究科 非常勤講師

    2019.04
    -
    2019.09

    , Special Affairs

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Memberships in Academic Societies 【 Display / hide

  • Japan Society of Applied Physics

     
  • The Electrochemical Society of Japan

     
  • Materials Research Society

     

Committee Experiences 【 Display / hide

  • 2020.04
    -
    2022.03

    委員, 応用物理学会 論文賞委員会

  • 2018.08
    -
    Present

    Editorial Board Member, Journal of Analytical Science and Technology

  • 2018.04
    -
    Present

    委員, ISO/TC229 ナノテクノロジー標準化国内審議委員会

  • 2018.03
    -
    Present

    委員, 電子情報技術産業協会 ナノエレクトロニクス標準化専門委員会 ナノカーボン標準化グループ

  • 2018.02
    -
    2022.01

    代議員, 応用物理学会

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