KEIO RESEARCHERS INFORMATION SYSTEM

Academic Background 【 Display / hide 】

Academic Background 【 Display / hide 】

• 1998.03

  Kyoto University, Faculty of Engineering, Department of Electronics

  University, Graduated

• 2000.03

  Kyoto University, Graduate School, Division of Engineering, Department of Electronic Science and Engineering

  Graduate School, Completed, Master's course

• 2002.11

  Kyoto University, Graduate School, Division of Engineering, Department of Electronic Science and Engineering

  Graduate School, Completed, Doctoral course

Academic Degrees 【 Display / hide 】

Academic Degrees 【 Display / hide 】

• Doctor of Engineering, Kyoto University, Coursework, 2002.11

Research Areas 【 Display / hide 】

Research Areas 【 Display / hide 】

• Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials (Electron/Electric Material Engineering)

• Nanotechnology/Materials / Thin film/surface and interfacial physical properties

• Nanotechnology/Materials / Applied physical properties

Papers 【 Display / hide 】

Papers 【 Display / hide 】

• Nanoscale visualization of fast carrier dynamics in organic thin-film transistors by time-resolved electrostatic force microscopy

  Yuji Yamagishi, Kei Kobayashi, Tomoharu Kimura, Kei Noda, Hirofumi Yamada

  Journal of Applied Physics （AIP Publishing)  135   125501-1 - 125501-7 2024.03

  Research paper (scientific journal), Joint Work, Last author, Corresponding author, Accepted

  • Access to Document (DOI)

• Controlling growth of lead halide perovskites on organic semiconductor buffer layers

  Ikumi Kamikawa, Kohei Yamamoto, Tetsuhiko Miyadera, Yuji Yoshida, Takurou N Murakami, Kei Noda

  JAPANESE JOURNAL OF APPLIED PHYSICS 63 （ 3 ） 03SP86-1 - 03SP86-4 2024.03

  Research paper (scientific journal), Joint Work, Last author, Corresponding author, Accepted

  • Access to Document (DOI)

• Highly efficient hydrogen production and selective CO₂ reduction by C₃N₅ photocatalyst using only visible light

  Kosei Ito, Kei Noda

  Physical Chemistry Chemical Physics （Royal Society of Chemistry)  26 （ 1 ） 153 - 160 2024.01

  Research paper (scientific journal), Joint Work, Last author, Corresponding author, Accepted

  • Access to Document (DOI)

• Cross-Plane Thermal Transport in Acceptor-Doped Thiophene-Based Polymer Thin Films Investigated by the 3-Omega Method

  Takayama K., Ito G., Kanazawa S., Ikkatai R., Noda K.

  Physica Status Solidi (A) Applications and Materials Science （Wiley)  220 （ 24 ） 2300110 2023.05

  Research paper (scientific journal), Joint Work, Last author, Corresponding author, Accepted,  ISSN  18626300

  　View Summary

  Thermal transport properties in acceptor-doped thiophene-based polymer films such as poly(3-hexylthiophene-2,5-diyl) (P3HT) and poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT) are investigated using the cross-plane 3-omega method. A bilayer structure consisting of polymer semiconductors sequentially doped with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) and poly(methylmethacrylate) (PMMA) on a Si substrate is originally prepared by spin coating and employed to prevent leakage current from a heater wire during the 3-omega measurements. Nondoped PBTTT thin film reveals an intrinsic cross-plane thermal conductivity of 0.49 W m−1 K−1, which is higher than that for nondoped P3HT film (0.20 W m−1 K−1). X-ray diffraction (XRD) analysis suggests that higher crystallinity of PBTTT films may result in higher thermal conductivity. The intrinsic thermal conductivity of P3HT and the interfacial thermal resistance between PMMA and P3HT are slightly increased at a low doping concentration (0.01 mg mL−1) and decreased at a higher doping concentration of 0.1 mg mL−1, whereas F4TCNQ doping reduces these values monotonously in the case of PBTTT layers. Furthermore, excess doping occurs only for P3HT and increments both intrinsic thermal conductivity and thermal resistance at PMMA/P3HT interface. The observed trend in the cross-plane thermal transport caused by the sequential doping can be attributed to the differences between P3HT and PBTTT in their crystallinity and effective doping levels.

  • Access to Document (DOI)

• Visible light-assisted hydrogen generation over platinum-loaded tungsten trioxide nanorods with the hexagonal and triclinic phases

  Kosei Ito , Ryota Uchida , Kei Noda

  Journal of Photochemistry & Photobiology, A: Chemistry （Elsevier)  443   114824-1 - 114824-9 2023.05

  Research paper (scientific journal), Joint Work, Last author, Corresponding author, Accepted,  ISSN  10106030

  　View Summary

  Visible light-assisted hydrogen (H2) generation was attempted for tungsten trioxide (WO3) nanorods (NRs) loaded with platinum (Pt). WO3 NRs were synthesized with a simple hydrothermal method using sodium tungstate as a precursor and oxalic acid as a structure-directing reagent. A variety of structural analyses clarify that both the end parts of a single hexagonal WO3 NR are transformed into triclinic WO3 when oxalic acid is added during the NR synthesis. The WO3 NR synthesized without oxalic acid (WO3(0)) displayed site-selective photodeposition of Pt cocatalysts on the (1 0 0) plane, whereas the Pt photodeposition occurred preferentially at the end (triclinic) parts of the WO3 NR synthesized with 0.05 M of oxalic acid (WO3(0.05)). These site-selective Pt deposition allows us to consider an inversion of the redox reaction field in WO3(0) and WO3(0.05) sample. Pt-loaded WO3(0.05) showed better photocatalytic activity ascertained in both methylene blue decomposition and H2 generation from water and methanol mixture, which can be brought about by a direct Z-scheme formed at heterojunctions between hexagonal and triclinic WO3 in a single NR. Finally, photoassisted H2 generation from water including ammonia borane with Pt-loaded WO3(0.05) was demonstrated, where a H2 generation rate under visible light irradiation was about 2.7 times higher than that in the dark. This result suggests a new strategy of efficient H2 generation based on synergetic effects of the WO3 NR photocatalysis and the Pt catalysis.

  • Access to Document (DOI)

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Papers, etc., Registered in KOARA 【 Display / hide 】

Papers, etc., Registered in KOARA 【 Display / hide 】

• Investigation of gas phase photocatalysis on nanostructured semiconductor surfaces and its application toward artificial photosynthesis

  Noda, Kei

  科学研究費補助金研究成果報告書 2019

• Photo-induced high-purity hydrogen production by integration of nanostructured semiconductor photocatalysts and hydrogen permeable membranes

  Noda, Kei

  科学研究費補助金研究成果報告書 2015

• Establishment of device design and scaling for organic transistors with carrier concentration control

  Noda, Kei

  科学研究費補助金研究成果報告書 2013

Reviews, Commentaries, etc. 【 Display / hide 】

Reviews, Commentaries, etc. 【 Display / hide 】

• 陽極酸化による酸化鉄ナノ チューブアレイの形成と気相反応場での光触媒機能

  野田　啓，柵木　光

  Denki Kagaku (The Electrochemical Society of Japan)  89 ( 4 ) 340 - 345 2021.12

  Article, review, commentary, editorial, etc. (scientific journal), Joint Work

  • Access to Document (DOI)

• 有機電界効果トランジスタにおける電気特性評価技術の現状について

  野田 啓

  Molecular Electronics and Bioelectronics 28 ( 4 ) 242 - 245 2017.11

  Article, review, commentary, editorial, etc. (scientific journal), Single Work

• Tips for organic semiconductor experiments

  NODA KEI

  応用物理 86 ( 1 ) 51 - 54 2017.01

  Article, review, commentary, editorial, etc. (scientific journal), Single Work

• Introductory Remarks-Background of Organic Electronics and Importance of Molecular Control Techniques

  NODA KEI

  The Journal of The Institute of Electrical Engineers of Japan 136 ( 2 ) 72 - 73 2016.02

  Article, review, commentary, editorial, etc. (scientific journal), Single Work

  • Access to Document (DOI)

• Charge Carrier Doping for Organic Transistors

  NODA KEI

  The Journal of The Institute of Electrical Engineers of Japan 136 ( 2 ) 78 - 81 2016.02

  Article, review, commentary, editorial, etc. (scientific journal), Single Work

  • Access to Document (DOI)

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Presentations 【 Display / hide 】

Presentations 【 Display / hide 】

• P3HT/g-C₃N₄薄膜ヘテロ接合形成と光起電力効果

  伊藤大記,野田 啓

  第71回応用物理学会春季学術講演会 (東京都市大学　世田谷キャンパス) , 

  2024.03

  , 

  Poster presentation

• 熱CVD法で作製したg-C₃N₄薄膜の光電気化学特性評価

  梅澤優生,米山 翔,内田涼太,一方井僚佑,伊藤皇聖,野田 啓

  第71回応用物理学会春季学術講演会 (東京都市大学　世田谷キャンパス) , 

  2024.03

  , 

  Poster presentation

• ナノフラワー状WO₃光陽極によるマイクロプラスチック分解

  小泉生吹,内田涼太,伊藤皇聖,野田 啓

  第71回応用物理学会春季学術講演会 (東京都市大学　世田谷キャンパス) , 

  2024.03

  , 

  Poster presentation

• 管状炉PVD法で作製した酸化鉄ナノチューブ/窒化炭素複合体における光触媒水素生成

  米山 翔,伊藤皇聖,梅澤優生,野田 啓

  第71回応用物理学会春季学術講演会 (東京都市大学　世田谷キャンパス) , 

  2024.03

  , 

  Oral presentation (general)

• 表面処理基板に高分子スタンプ法で作製した有機ホモ接合トランジスタの評価

  高山和輝,井形幸史郎,中島佑一,野田 啓

  第71回応用物理学会春季学術講演会 (東京都市大学　世田谷キャンパス) , 

  2024.03

  , 

  Oral presentation (general)

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Research Projects of Competitive Funds, etc. 【 Display / hide 】

Research Projects of Competitive Funds, etc. 【 Display / hide 】

• Organic semiconductor device design considering electrothermal properties toward high current switching

  2022.06

  -

  2025.03

  MEXT,JSPS, Grant-in-Aid for Scientific Research, 挑戦的研究（萌芽）, Principal investigator

• 前駆体の精密設計に基づく二次元窒化炭素構造体の薄膜形成と光応答型膜反応器への応用

  2019.04

  -

  2023.03

  Grant-in-Aid for Scientific Research, Principal investigator

• Investigation of gas phase photocatalysis on nanostructured semiconductor surfaces and its application toward artificial photosynthesis

  2017.06

  -

  2020.03

  Grant-in-Aid for Scientific Research, Principal investigator

• 有機半導体薄膜に関する国際標準化

  2014.04

  -

  2017.02

  Commissioned ｒesearch, Coinvestigator(s)

• Ultra fast solar hydrogen production using gas phase photocatalysis based on core-shell semiconductor nanostructure

  2013.06

  -

  2015.03

  日本学術振興会, 二国間交流事業共同研究, Commissioned ｒesearch, Principal investigator

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Intellectual Property Rights, etc. 【 Display / hide 】

Intellectual Property Rights, etc. 【 Display / hide 】

• 有機薄膜トランジスタ

  Date applied： 2013-112504  2013.05 

  Patent, Joint

• 水素生成・分離一体型機能性薄膜及びその製造方法

  Date applied： 2011-013778  2011.01 

  Patent, Joint

Awards 【 Display / hide 】

Awards 【 Display / hide 】

• IEC 1906 Award

  2017.10, International Electrotechnical Commission (IEC)

  Type of Award： International academic award (Japan or overseas)

• 2007年度（第7回）船井情報科学奨励賞（エレクトロニクス部門）

  野田　啓, 2008.04, 船井情報科学振興財団

  Type of Award： Award from publisher, newspaper, foundation, etc.

• Research fellowship from Alexander von Humboldt Foundation

  2004.04, Alexander von Humboldt Foundation

  Type of Award： Award from publisher, newspaper, foundation, etc.

• 1st International Conference on Molecular Electronics and Bioelectronics (M&BE1), Young Scientist Award

  Kei Noda, 2001.03, 1st International Conference on Molecular Electronics and Bioelectronics (M&BE1)

  Type of Award： Award from Japanese society, conference, symposium, etc.

• 第47回応用物理学関係連合講演会（応用物理学会） 講演奨励賞

  野田　啓, 2000.03, 応用物理学会

  Type of Award： Award from Japanese society, conference, symposium, etc.

Other 【 Display / hide 】

Other 【 Display / hide 】

• 2017年06月

  　View Details

  IEC/TS 62607-5-3 Ed 1.0 Nanomanufacturing - Key control characteristics - Part 5-3: Thin-film organic/nano electronic devices - Measurements of charge carrier concentration, Project Leader

• 2016年02月

  　View Details

  The Journal of The Institute of Electrical Engineers of Japan, 2016 Vol.136, No.2, Special Issue on "Functional Organic Materials Leading The Next Generation -Molecular Control and Its Electronics Applications-" Guest Editor

• 2014年09月

  　View Details

  IEC/TS 62607-5-1 Ed 1.0 Nanomanufacturing - Key control characteristics - Part 5-1: Thin-film organic/nano electronic devices - Carrier transport measurements

Courses Taught 【 Display / hide 】

Courses Taught 【 Display / hide 】

• SEMINOR IN ELECTRONICS AND INFOTMATION ENGINEERING(2)

  2024

• RECITATION IN ELECTRONICS AND INFORMATION ENGINEERING

  2024

• PHYSICS D

  2024

• MATERIALS FOR ELECTRONICS AND ELECTRICAL ENGINEERING

  2024

• LABORATORY IN SCIENCE

  2024

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Courses Previously Taught 【 Display / hide 】

Courses Previously Taught 【 Display / hide 】

• Laboratory in science

  Keio University

  2018.04

  -

  2019.03

  , 

  Spring Semester, Laboratory work/practical work/exercise

• Electrical and electronic materials

  Keio University

  2018.04

  -

  2019.03

  , 

  Autumn Semester, Lecture

• Laboratories in electronics and electrical engineering (2)

  Keio University

  2018.04

  -

  2019.03

  , 

  Autumn Semester, Laboratory work/practical work/exercise

• Organic Electronic Materials and Devices

  Keio University

  2018.04

  -

  2019.03

  , 

  Autumn Semester, Lecture

• 物理学C, D

  Keio University

  2018.04

  -

  2019.03

  , 

  Autumn Semester

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Educational Activities and Special Notes 【 Display / hide 】

Educational Activities and Special Notes 【 Display / hide 】

• 京都大学　大学院　工学研究科　非常勤講師

  2023.04

  -

  2023.09

  , Special Affairs

• 三重大学　大学院　工学研究科　非常勤講師

  2022.04

  -

  2022.09

  , Special Affairs

• 京都大学　大学院　工学研究科　非常勤講師

  2021.04

  -

  2021.09

  , Special Affairs

• 京都大学　大学院　工学研究科　非常勤講師

  2019.04

  -

  2019.09

  , Special Affairs

• 京都大学　大学院　工学研究科　非常勤講師

  2017.04

  -

  2017.09

  , Special Affairs

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Memberships in Academic Societies 【 Display / hide 】

Memberships in Academic Societies 【 Display / hide 】

• Japan Society of Applied Physics

  　

• The Electrochemical Society of Japan

  　

• Materials Research Society

  　

Committee Experiences 【 Display / hide 】

Committee Experiences 【 Display / hide 】

• 2020.04

  -

  2022.03

  委員, 応用物理学会　論文賞委員会

• 2018.08

  -

  Present

  Editorial Board Member, Journal of Analytical Science and Technology

• 2018.04

  -

  Present

  委員, ISO/TC229 ナノテクノロジー標準化国内審議委員会

• 2018.03

  -

  Present

  委員, 電子情報技術産業協会　ナノエレクトロニクス標準化専門委員会　ナノカーボン標準化グループ

• 2018.02

  -

  2022.01

  代議員, 応用物理学会

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