Noda, Kei

写真a

Affiliation

Faculty of Science and Technology, Department of Electronics and Electrical Engineering ( Yagami )

Position

Professor

E-mail Address

E-mail address

Related Websites

External Links
Scopus Paper Info  
Paper Count: 81 Citation Count: 1020 h-index: 16

Click to view the Scopus page. The data was downloaded from Scopus API in September 13, 2026, via http://api.elsevier.com and http://www.scopus.com .

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Academic Background 【 Display / hide 】

  • 1998.03

    Kyoto University, Faculty of Engineering, Department of Electronics

    University, Graduated

  • 2000.03

    Kyoto University, Graduate School, Division of Engineering, Department of Electronic Science and Engineering

    Graduate School, Completed, Master's course

  • 2002.11

    Kyoto University, Graduate School, Division of Engineering, Department of Electronic Science and Engineering

    Graduate School, Completed, Doctoral course

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Academic Degrees 【 Display / hide 】

  • Doctor of Engineering, Kyoto University, Coursework, 2002.11

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Research Areas 【 Display / hide 】

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials (Electron/Electric Material Engineering)

  • Nanotechnology/Materials / Thin film/surface and interfacial physical properties

  • Nanotechnology/Materials / Applied physical properties

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Papers 【 Display / hide 】

  • Enhanced photocatalytic hydrogen evolution over α-Fe2O3 nanotube arrays decorated with g-C3N4 nanoparticles via physical vapor deposition

    Uo Umezawa, Sho Yoneyama, Kosei Ito, Kei Noda

    Diamond and Related Materials    114157 2026.09

    Research paper (scientific journal), Joint Work, Last author, Corresponding author, Accepted

  • Band alignment estimation of MoS2/g-C3N4 thin-film S-scheme heterojunction based on surface potential measurements

    Yuto Suzuki, Kosei Ito, Kei Noda

    RSC Applied Interfaces (Royal Society of Chemistry)   2026.06

    Research paper (scientific journal), Joint Work, Last author, Corresponding author, Accepted

    　View Summary

    Energy band alignment of a thin-film heterojunction of molybdenum disulfide (MoS<inf>2</inf>) and polymeric carbon nitride (g-C<inf>3</inf>N<inf>4</inf>) has been investigated, and can be regarded as a model system of heterojunction photocatalysts. A bilayer of MoS<inf>2</inf> and g-C<inf>3</inf>N<inf>4</inf> (MoS<inf>2</inf>/g-C<inf>3</inf>N<inf>4</inf>) with an exposed platinum (Pt) bottom electrode was fabricated by thermal chemical vapor deposition and sulfur hexafluoride-based dry etching, followed by deposition of MoS<inf>2</inf> nanosheets on top of that via tape exfoliation and elastomer-assisted transfer techniques. Simultaneous imaging of topography and surface potential over MoS<inf>2</inf>/g-C<inf>3</inf>N<inf>4</inf> on Pt was performed by using Kelvin probe force microscopy (KPFM) in the dark. The energy band alignment of MoS<inf>2</inf>/g-C<inf>3</inf>N<inf>4</inf> on Pt was estimated based on the KPFM imaging results and other physical properties of individual MoS<inf>2</inf> and g-C<inf>3</inf>N<inf>4</inf> samples examined with ultraviolet photoelectron spectroscopy and ultraviolet-visible absorption spectroscopy. In addition, the photo-induced change in the surface potential over MoS<inf>2</inf>/g-C<inf>3</inf>N<inf>4</inf> on Pt was measured to consider the behavior of photo-induced carriers therein. The depicted energy band alignment having band bending in the MoS<inf>2</inf> layer suggests the possibility of S-scheme heterojunction formation at the MoS<inf>2</inf>/g-C<inf>3</inf>N<inf>4</inf> interface.

  • Efficient photocatalytic properties using the S-scheme charge transfer of WO3/C3N5 without precious metals

    Kosei Ito, Shuta Fujioka, Shusuke Yoneyama, Matthis Richard Vosberg, Paul Fons, Kei Noda

    Applied Surface Science 732   166558 2026.03

    Research paper (scientific journal), Last author, Accepted,  ISSN  01694332

    　View Summary

    Composite photocatalysts have many advantages, such as visible light response, charge separation efficiency, and the lack of precious metal use, and are attracting attention as high-performance photocatalytic materials that can solve many of the problems associated with single photocatalysts. On the other hand, there remain many unknowns regarding charge transfer, the understanding of which is key to improving the performance of composite photocatalysts. In particular, elucidating the details of the charge transfer process at the photocatalyst interface is an urgent and important issue that must be understood to improve the performance of future composite photocatalysts. In this study, we have focused on composite formation of tungsten trioxide (WO<inf>3</inf>) and nitrogen-rich carbon nitride (C<inf>3</inf>N<inf>5</inf>), and have investigated the band bending occurring at the interface during complexation and the charge transfer before and after light irradiation over the composite photocatalysts using various experimental techniques and simulations. The results support the presence of the ideal S-scheme mechanism and the overall photocatalytic performance of WO<inf>3</inf>/C<inf>3</inf>N<inf>5</inf> was superior to that of the other individual photocatalysts. In addition, C<inf>3</inf>N<inf>5</inf> particle size was found to decrease during annealing treatment when complexed with WO<inf>3</inf>, which is surmised to be due to the loss of bridging nitrogen.

  • Visible-Light-Driven Photocatalytic Polyethylene Degradation Using WO3 Nanoflowers Without Hot-Press Processing

    Ibuki Koizumi, Kosei Ito, Kei Noda

    Chemphotochem 10 ( 3 ) e202500355 2026.03

    Research paper (scientific journal), Joint Work, Last author, Accepted

    　View Summary

    Plastic waste poses significant environmental and health challenges. Photocatalytic degradation using sunlight offers a promising solution; however, many previous studies have relied on impractical conditions, such as employing ultraviolet light irradiation and hot-pressed mixture of plastics and photocatalysts. In this study, we explored a simple and practical method for plastic degradation under visible light. A visible-light-responsive tungsten trioxide (WO<inf>3</inf>) powder with a nanoflower structure was simply mixed with polyethylene (PE) powder without hot pressing and then irradiated with visible light. Effective degradation of PE was observed, and the reaction proceeded stably under prolonged irradiation. In contrast, a hot-pressed WO<inf>3</inf>–PE sample exhibited reduced degradation efficiency, likely due to the collapse of the nanoflower structure, which diminished light absorption and surface activity. These findings demonstrate that a simple powder mixture can enable efficient plastic degradation under visible light, presenting a practical strategy for photocatalytic plastic waste treatment and contributing to sustainable environmental solutions.

  • p+-i-p+ Type poly(3-hexylthiophene-2,5-diyl) thin-film transistors prepared by transfer printing with elastomer stamp

    Kazuki Takayama, Koushirou Igata, Yuuichi Nakajima, Taiki Ito, Kei Noda

    Journal of Materials Science: Materials in Electronics (Springer Science+Business Media, LLC)  36 ( 21 ) 1353 2025.07

    Research paper (scientific journal), Joint Work, Last author, Corresponding author, Accepted,  ISSN  09574522

    　View Summary

    In organic thin-film transistors (OTFTs), carrier doping is a versatile technique to control and improve their device characteristics. In this study, bottom-gate, bottom-contact (BGBC) p-channel transistors comprised by contact electrodes of highly p-doped layer (p<sup>+</sup>) and a non-doped, intrinsic semiconductor layer (i), so-called p<sup>+</sup>-i-p<sup>+</sup> type transistors, were newly fabricated by using the transfer printing of poly(3-hexylthiophene-2,5-diyl) (P3HT) films. A uniform P3HT thin layer was formed onto a poly(dimethylsiloxane) (PDMS) elastomer by the push coating method, followed by the peel-off and transfer process of P3HT micropatterns via elastomer stamping with the aid of prepatterned master substrates. Source-drain p<sup>+</sup> layers were prepared by liquid-phase doping of the P3HT micropatterns with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) as an acceptor dopant. Then, undoped i stripes were deposited onto the p<sup>+</sup> contact electrode patterns by the transfer printing, which enabled us to construct p<sup>+</sup>-i-p<sup>+</sup> type polymer transistors with hydrophobic CYTOP-coated SiO<inf>2</inf> gate insulators. The prepared devices presented p-channel, normally-off operation with no gate-sweep hysteresis, suggesting that the appropriate combination of printing and molecular doping techniques can pave the way toward the device design of all-organic transistors.

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Reviews, Commentaries, etc. 【 Display / hide 】

  • 陽極酸化による酸化鉄ナノ チューブアレイの形成と気相反応場での光触媒機能

    野田　啓，柵木　光

    Denki Kagaku (The Electrochemical Society of Japan)  89 ( 4 ) 340 - 345 2021.12

    Article, review, commentary, editorial, etc. (scientific journal), Joint Work

  • 有機電界効果トランジスタにおける電気特性評価技術の現状について

    野田 啓

    Molecular Electronics and Bioelectronics 28 ( 4 ) 242 - 245 2017.11

    Article, review, commentary, editorial, etc. (scientific journal), Single Work

  • Tips for organic semiconductor experiments

    NODA KEI

    応用物理 86 ( 1 ) 51 - 54 2017.01

    Article, review, commentary, editorial, etc. (scientific journal), Single Work

  • Introductory Remarks-Background of Organic Electronics and Importance of Molecular Control Techniques

    NODA KEI

    The Journal of The Institute of Electrical Engineers of Japan 136 ( 2 ) 72 - 73 2016.02

    Article, review, commentary, editorial, etc. (scientific journal), Single Work

  • Charge Carrier Doping for Organic Transistors

    NODA KEI

    The Journal of The Institute of Electrical Engineers of Japan 136 ( 2 ) 78 - 81 2016.02

    Article, review, commentary, editorial, etc. (scientific journal), Single Work

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Presentations 【 Display / hide 】

  • C3N5光アノードにおける酸化チタンバッファ層の効果

    吉井 悠真,梅澤 優生,伊藤 皇聖,野田 啓

    [Domestic presentation]  第87回応用物理学会秋季学術講演会 (北海道大学 札幌キャンパス) , 

    2026.09
    , 

    Poster presentation

  • g-C3N4/P3HT薄膜ヘテロ接合フォトダイオードにおけるg-C3N4薄膜化の効果

    柳澤 宙輝, 伊藤 大記, 野田 啓

    [Domestic presentation]  第87回応用物理学会秋季学術講演会 (北海道大学 札幌キャンパス) , 

    2026.09
    , 

    Poster presentation

  • 異なる透明導電基板上に製膜したC3N5光電極の性能評価

    梅澤 優生,伊藤 皇聖,吉井 悠真,野田 啓

    [Domestic presentation]  第87回応用物理学会秋季学術講演会 (北海道大学 札幌キャンパス) , 

    2026.09
    , 

    Oral presentation (general)

  • Photocatalytic energy conversion with nanostructured semiconductors

    Kei Noda

    [International presentation]  4th International Congress on Catalysis Science and Chemical Engineering (CatScience 2026) (Palazzo Corrado Alvaro, Reggio Calabria) , 

    2026.06
    -
    2026.07
    , 

    Oral presentation (invited, special)

  • Resistive switching memory characteristics of polymeric carbon nitride thin films deposited by thermal chemical vapor deposition

    Keigo Sugiyama, Hiroki Yanagisawa, Kei Noda

    [International presentation]  The 12th International Conference on Molecular Electronics and Bioelectronics (M&BE12), 

    2026.06
    , 

    Poster presentation

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Research Projects of Competitive Funds, etc. 【 Display / hide 】

  • Thin film formation of polymeric carbon nitride structure with precisely-designed precursors and its photoelectrochemical application

    2025.04
    -
    2028.03

    基盤研究(B), Principal investigator

  • Organic semiconductor device design considering electrothermal properties toward high current switching

    2022.06
    -
    2025.03

    MEXT,JSPS, Grant-in-Aid for Scientific Research, 挑戦的研究（萌芽）, Principal investigator

  • 前駆体の精密設計に基づく二次元窒化炭素構造体の薄膜形成と光応答型膜反応器への応用

    2019.04
    -
    2023.03

    Grant-in-Aid for Scientific Research, Principal investigator

  • Investigation of gas phase photocatalysis on nanostructured semiconductor surfaces and its application toward artificial photosynthesis

    2017.06
    -
    2020.03

    Grant-in-Aid for Scientific Research, Principal investigator

  • 有機半導体薄膜に関する国際標準化

    2014.04
    -
    2017.02

    Commissioned ｒesearch, Coinvestigator(s)

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Intellectual Property Rights, etc. 【 Display / hide 】

  • 有機薄膜トランジスタ

    Date applied： 2013-112504  2013.05 

    Patent, Joint

  • 水素生成・分離一体型機能性薄膜及びその製造方法

    Date applied： 2011-013778  2011.01 

    Patent, Joint

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Awards 【 Display / hide 】

  • IEC 1906 Award

    2017.10, International Electrotechnical Commission (IEC)

    Type of Award： International academic award (Japan or overseas)

  • 2007年度（第7回）船井情報科学奨励賞（エレクトロニクス部門）

    野田　啓, 2008.04, 船井情報科学振興財団

    Type of Award： Award from publisher, newspaper, foundation, etc.

  • Research fellowship from Alexander von Humboldt Foundation

    2004.04, Alexander von Humboldt Foundation

    Type of Award： Award from publisher, newspaper, foundation, etc.

  • 1st International Conference on Molecular Electronics and Bioelectronics (M&BE1), Young Scientist Award

    Kei Noda, 2001.03, 1st International Conference on Molecular Electronics and Bioelectronics (M&BE1)

    Type of Award： Award from Japanese society, conference, symposium, etc.

  • 第47回応用物理学関係連合講演会（応用物理学会） 講演奨励賞

    野田　啓, 2000.03, 応用物理学会

    Type of Award： Award from Japanese society, conference, symposium, etc.

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Other 【 Display / hide 】

  • 2017年06月

    　View Details

    IEC/TS 62607-5-3 Ed 1.0 Nanomanufacturing - Key control characteristics - Part 5-3: Thin-film organic/nano electronic devices - Measurements of charge carrier concentration, Project Leader

  • 2016年02月

    　View Details

    The Journal of The Institute of Electrical Engineers of Japan, 2016 Vol.136, No.2, Special Issue on "Functional Organic Materials Leading The Next Generation -Molecular Control and Its Electronics Applications-" Guest Editor

  • 2014年09月

    　View Details

    IEC/TS 62607-5-1 Ed 1.0 Nanomanufacturing - Key control characteristics - Part 5-1: Thin-film organic/nano electronic devices - Carrier transport measurements

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Courses Taught 【 Display / hide 】

  • ELECTRONICS AND ELECTRICAL ENGINEERING PRACTICAL RESEARCH ACTIVITIES B

    2026

  • COMPREHENSIVE EXERCISE OF ELECTRONICS AND ELECTRICAL ENGINEERING

    2026

  • MATERIALS FOR ELECTRONICS AND ELECTRICAL ENGINEERING

    2026

  • PHYSICS C

    2026

  • FUNDAMENTALS OF ELECTRONICS

    2026

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Courses Previously Taught 【 Display / hide 】

  • Laboratory in science

    Keio University

    2018.04
    -
    2019.03
    , 

    Spring Semester, Laboratory work/practical work/exercise

  • Electrical and electronic materials

    Keio University

    2018.04
    -
    2019.03
    , 

    Autumn Semester, Lecture

  • Laboratories in electronics and electrical engineering (2)

    Keio University

    2018.04
    -
    2019.03
    , 

    Autumn Semester, Laboratory work/practical work/exercise

  • Organic Electronic Materials and Devices

    Keio University

    2018.04
    -
    2019.03
    , 

    Autumn Semester, Lecture

  • 物理学C, D

    Keio University

    2018.04
    -
    2019.03
    , 

    Autumn Semester

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Educational Activities and Special Notes 【 Display / hide 】

  • 京都大学　大学院　工学研究科　非常勤講師

    2025.06
    -
    2025.09

    , Special Affairs

  • 京都大学　大学院　工学研究科　非常勤講師

    2023.04
    -
    2023.09

    , Special Affairs

  • 三重大学　大学院　工学研究科　非常勤講師

    2022.04
    -
    2022.09

    , Special Affairs

  • 京都大学　大学院　工学研究科　非常勤講師

    2021.04
    -
    2021.09

    , Special Affairs

  • 京都大学　大学院　工学研究科　非常勤講師

    2019.04
    -
    2019.09

    , Special Affairs

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Memberships in Academic Societies 【 Display / hide 】

  • Japan Society of Applied Physics

    　

  • The Electrochemical Society of Japan

    　

  • Materials Research Society

    　
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Committee Experiences 【 Display / hide 】

  • 2020.04
    -
    2022.03

    委員, 応用物理学会　論文賞委員会

  • 2018.08
    -
    Present

    Editorial Board Member, Journal of Analytical Science and Technology

  • 2018.04
    -
    Present

    委員, ISO/TC229 ナノテクノロジー標準化国内審議委員会

  • 2018.03
    -
    Present

    委員, 電子情報技術産業協会　ナノエレクトロニクス標準化専門委員会　ナノカーボン標準化グループ

  • 2018.02
    -
    2022.01

    代議員, 応用物理学会

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