Nakano, Nobuhiko

写真a

Affiliation

Faculty of Science and Technology, Department of Electronics and Electrical Engineering (Yagami)

Position

Professor

Career 【 Display / hide

  • 1995.04
    -
    1996.03

    日本学術振興会 ,特別研究員

  • 1995.04
    -
    1996.03

    慶應義塾大学理工学部 ,訪問研究員

  • 1996
    -
    1999

    1年生クラス担任

  • 1996.04
    -
    1999.03

    慶應義塾大学理工学部電子工学科 ,助手

  • 1999.04
    -
    2003.03

    慶應義塾大学理工学部電子工学科 ,専任講師

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Academic Background 【 Display / hide

  • 1990.03

    Keio University, Faculty of Science and Engineering, 電気工学科

    University, Graduated

  • 1992.03

    Keio University, Graduate School, Division of Science and Engineeri, 電気工学専攻

    Graduate School, Completed, Master's course

  • 1995.03

    Keio University, Graduate School, Division of Science and Engineeri, 電気工学専攻

    Graduate School, Completed, Doctoral course

Academic Degrees 【 Display / hide

  • 工学, Keio University, 1995.03

 

Research Areas 【 Display / hide

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment (Electronic Device/Electronic Equipment)

  • Life Science / Neuroscience-general (General Neuroscience)

Research Keywords 【 Display / hide

  • アナログ回路設計

  • noise modeling

  • bio-sensing

  • numerical simulation

  • LSI

 

Papers 【 Display / hide

  • Impact Ionization and Critical Electric Field in 010-Oriented β-Ga<inf>2</inf>O<inf>3</inf>Schottky Barrier Diode

    Sugiura T., Nakano N.

    IEEE Transactions on Electron Devices (IEEE Transactions on Electron Devices)  69 ( 6 ) 3068 - 3072 2022.06

    ISSN  00189383

     View Summary

    The hole impact ionization coefficient (IIC) of β -Ga2O3 in the 〈 010〉 direction is determined by numerical simulation, as β (E) = 4.0× 105 ċ exp(-3.1 × 106E. The simulation model reproduces the experiment of the Schottky barrier diode (SBD) operation, and the investigation of the IIC is performed by varying the value to obtain the matched breakdown voltage at the reversed bias operation. The breakdown simulation results are consistent with the experimental results, with only small errors. By comparing the input modeling with the electron-only impact ionization, hole impact ionization is dominant for SBD breakdown operations.

  • Advanced Industrial Tunnel Oxide Passivated Contact Solar Cell by the Rear-Side Local Carrier-Selective Contact

    Sugiura T., Matsumoto S., Nakano N.

    IEEE Transactions on Electron Devices (IEEE Transactions on Electron Devices)  69 ( 5 ) 2481 - 2487 2022.05

    ISSN  00189383

     View Summary

    In this study, we propose an advanced tunnel oxide passivated contact (TOPCon) solar cell structure for bifacial usage. The proposed structure, named advanced industrial TOPCon (Ai-TOPCon), adopts rear-side local carrier-selective contacts to avoid rear-side light-absorption loss. Ai-TOPCon features larger rear-side light currents and improves the power density by approximately 0.28 mW/cm2 for bifacial usage in a 20% albedo scenario. Several types of Ai-TOPCon and industrial TOPCon (i-TOPCon) are evaluated, and the optimization of the structure resulted in a power density of 28.73 mW/cm2. Loss analysis revealed that the reduced Auger recombination volume was the main factor contributing to the improvement of cell performance, and the light-absorption problem was solved by reducing the rear-side heavy-doped region.

  • Transparent Conductive Oxide Materials for Bifacial Heterojunction Back Contact Solar Cells

    Sugiura T., Nakano N.

    IEEE Transactions on Electron Devices (IEEE Transactions on Electron Devices)   2022

    ISSN  00189383

     View Summary

    We assessed the performance of transparent conductive oxide (TCO) materials for use in the heterojunction back contact + (HBC+) solar cell. In addition to indium tin oxide (ITO), titanium dioxide (TiO&#x2082;) and zinc oxide (ZnO) were evaluated as possible materials for the rear side of HBC+ solar cells. The results showed that the different optical and electrical parameters of the TCO materials affect the cell performance differently. Of the TCO materials that were assessed, the HBC+ cell with TiO&#x2082; delivered the best performance by increasing the power density by approximately 0.5 mW/cm&#x00B2; (relative to our previous evaluation) under bifacial illumination conditions. The optical properties of the TCO materials were revealed to have the greatest effect on the cell performance, particularly on the rear-side performance. The optimal size of the rear metal area is affected by the properties of the TCO material, mainly by the resistive components, and an increase in the temperature does not affect the selection of the best TCO material.

  • High-Temperature Piezoresistance of Silicon Carbide and Gallium Nitride Materials

    Sugiura T., Takahashi N., Sakota R., Matsuda K., Nakano N.

    IEEE Journal of the Electron Devices Society (IEEE Journal of the Electron Devices Society)  10   203 - 211 2022

     View Summary

    We examine the temperature dependence of the piezoresistive coefficients of silicon carbide (SiC) and gallium nitride (GaN) crystals, which are prospective materials for high-temperature applications owing to their wide-bandgap properties. The temperature-dependent piezoresistive coefficients of these materials were obtained by modeling experimental resistance changes using thermomechanical numerical simulations. This work reports the piezoresistive coefficients of 4H-SiC and GaN at the high-temperature environments, which are still not well researched. The results revealed that the temperature dependences of piezoresistive coefficients were strongly related to the ionization energy, and a high ionization energy stabilized the values of the piezoresistive coefficients at high temperatures. Our proposed temperature modeling method helps in predicting the temperature dependence of the piezoresistive coefficient using the value at the room temperature and the ionization energy of the material, which is useful for evaluating the piezoresistive effect at different temperatures during device simulations.

  • Bifacial Heterojunction Back Contact Solar Cell: 29-mW/cm<sup>2</sup>Output Power Density in Standard Albedo Condition

    Sugiura T., Matsumoto S., Nakano N.

    IEEE Transactions on Electron Devices (IEEE Transactions on Electron Devices)  68 ( 11 ) 5645 - 5651 2021.11

    ISSN  00189383

     View Summary

    A new crystalline-Si (c-Si) solar cell design based on bifacial heterojunction back contact (HBC) with a transparent conductive oxide (TCO) is proposed by the numerical simulation method. Three bifacial HBC schemes are evaluated and compared: full-area contact with an increase in the pitch distance, point contact, and point contact with indium tin oxide (ITO). The results reveal that point contact with ITO is the most optimal among the three aforenoted schemes. The bottleneck of bifacial HBC is caused by the extremely low carrier mobility in an amorphous Si (a-Si) region, and this can be resolved by applying ITO to form a full-contact area that covers all surfaces of the a-Si region. A maximum power density of 29 mW/cm2 is obtained from bifacial HBC, which is an extremely high output from a single-junction c-Si solar cell. The improvement in the maximum power density over the monofacial condition is 8% at 20% albedo.

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Papers, etc., Registered in KOARA 【 Display / hide

Presentations 【 Display / hide

  • An On-Chip Ultra-Low-Power Hz-Range Ring Oscillator Based on Dynamic Leakage Suppression Logic

    Jorge Cañada, Yui Yoshida, Hiroki Miura, Nobuhiko Nakano

    International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC 2020), 

    2020.07

  • Low-power High-Voltage Driver Based on Standard CMOS Technology for On-Chip Memory Recording

    Jorge Cañada, Yui Yoshida, Takashi Tonomura, Hiroki Miura, Nobihiko Nakano

    電子回路研究会 (日本大学理工学部駿河台校舎タワー・スコラ) , 

    2019.12

    Oral presentation (general), 電気学会

  • リングオシレータ用昇圧器付きクロスカップルチャージポンプ

    三浦 大毅, 吉田 祐威, 外村 崇史, Jorge Canada, 中野 誠彦

    電子回路研究会, 

    2019.12

    Oral presentation (general)

  • A delta-sigma modulator with frequency division multiplexing for multi-channel EEG acquisition front-end

    Mikawa M., Kawazoe S., Fukuoka R., Nakano N. 

    2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019, 

    2019.11

    Poster presentation

  • Frequency Adjustable On-Chip Notch Filter to Eliminate Hum Noise for EEG Acquisition

    Ryuto Fukuoka, Syohei Kawazoe,Mikiyoshi Mikawa, and Nobuhiko Nakano

    2019 International Conference on Analog VLSI Circuits (Yilan, Taiwan) , 

    2019.10

    Oral presentation (general)

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Research Projects of Competitive Funds, etc. 【 Display / hide

  • 人工シナプス用多チャンネル膜電位固定LSIの実現

    2014
    -
    2017.03

    日本学術振興会, Grant-in-Aid for Scientific Research, Research grant, Principal investigator

Awards 【 Display / hide

  • Certificate of Appreciation

    2020.06, IEICE Electronics Express Editorial Committee

    Type of Award: Other

  • Taiwan and Japan Conference on Circuits and Systems 2019 Best student paper award

    Jorge Canada, Nobuhiko Nakano, 2019.08, IEEE CASS, An On-Chip Sub-pW Hz-Range Ring Oscillator

    Type of Award: Award from international society, conference, symposium, etc.

  • LSIとシステムのワークショップ優秀ポスター賞

    2017.05, 電子情報通信学会, 標準CMOSプロセスによるオンチップ太陽電池の高性能化

  • エレクトロニクスソサエティ功労賞

    2017.03, 電子情報通信学会

    Type of Award: Award from publisher, newspaper, foundation, etc.

  • 電気学会 論文発表賞

    中野 誠彦, 1992, 電気学会

 

Courses Taught 【 Display / hide

  • RECITATION IN ELECTRONICS AND INFORMATION ENGINEERING

    2022

  • NUMERICAL MODELING AND COMPUTATIONAL SIMULATION

    2022

  • LSI CIRCUIT DESIGN 1

    2022

  • LABORATORIES IN ELECTRONICS AND INFORMATION ENGINEERING(2)

    2022

  • INDEPENDENT STUDY ON INTEGRATED DESIGN ENGINEERING

    2022

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Courses Previously Taught 【 Display / hide

  • 電気電子工学実験第二

    Keio University

    2014.04
    -
    2015.03

    Autumn Semester, Laboratory work/practical work/exercise, Lecturer outside of Keio

  • 計算機構成

    Keio University

    2014.04
    -
    2015.03

    Autumn Semester, Lecture, Within own faculty

  • 理工学基礎実験

    Keio University

    2014.04
    -
    2015.03

    Spring Semester, Laboratory work/practical work/exercise, Lecturer outside of Keio

  • 数値モデリングと計算機シミュレーション

    Keio University

    2014.04
    -
    2015.03

    Spring Semester, Lecture, Within own faculty

  • 電気電子計測

    Keio University

    2014.04
    -
    2015.03

    Spring Semester, Lecture, Within own faculty

 

Memberships in Academic Societies 【 Display / hide

  • 電気学会, 

    1992
    -
    Present
  • 応用物理学会, 

    1992.02
    -
    Present
  • シリコンテクノロジー分科会, 

    2017.04
    -
    Present
  • プラズマエレクトロニクス分科会, 

    1996.03
    -
    2016.05
  • 電子通信情報学会, 

    2009
    -
    Present

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Committee Experiences 【 Display / hide

  • 2020.06
    -
    Present

    CAS研究会専門委員, 電子情報通信学会

  • 2020.04
    -
    Present

    電子・情報・システム部門編修委員会委員, 電気学会

  • 2020.04
    -
    Present

    電子・情報・システム部門 役員会 委員, 電気学会

  • 2020.04
    -
    2022.03

    サステナブルコンピューティング特別研究会委員長, 電子情報通信学会

  • 2020.04
    -
    2021.03

    2020年電子・情報・システム部門大会委員会 委員, 電気学会

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