Nakano, Nobuhiko

写真a

Affiliation

Faculty of Science and Technology, Department of Electronics and Electrical Engineering (Yagami)

Position

Professor

E-mail Address

E-mail address

Career 【 Display / hide

  • 1995.04
    -
    1996.03

    慶應義塾大学理工学部 ,訪問研究員

  • 1995.04
    -
    1996.03

    日本学術振興会 ,特別研究員

  • 1996
    -
    1999

    1年生クラス担任

  • 1996.04
    -
    1999.03

    慶應義塾大学理工学部電子工学科 ,助手

  • 1999.04
    -
    2003.03

    慶應義塾大学理工学部電子工学科 ,専任講師

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Academic Background 【 Display / hide

  • 1990.03

    Keio University, Faculty of Science and Engineering, 電気工学科

    University, Graduated

  • 1992.03

    Keio University, Graduate School, Division of Science and Engineeri, 電気工学専攻

    Graduate School, Completed, Master's course

  • 1995.03

    Keio University, Graduate School, Division of Science and Engineeri, 電気工学専攻

    Graduate School, Completed, Doctoral course

Academic Degrees 【 Display / hide

  • 工学, Keio University, 1995.03

 

Research Areas 【 Display / hide

  • Electron device/Electronic equipment (Electronic Device/Electronic Equipment)

  • Neurophysiology / General neuroscience (General Neuroscience)

Research Keywords 【 Display / hide

  • アナログ回路設計

  • noise modeling

  • bio-sensing

  • numerical simulation

  • LSI

 

Papers 【 Display / hide

  • Optimization of Front Diffusion Profile in Bifacial Interdigitated Back Contact Solar Cell

    Takaya Sugiura, Satoru Matsumoto, and Nobuhiko Nakano

    IEEE Journal of Photovoltaics (IEEE)   2020.09

    Research paper (scientific journal), Joint Work, Accepted

  • Bifacial PERC Solar Cell Designs: Bulk and Rear Properties and Illumination Condition

    Takaya Sugiura, Satoru Matsumoto, and Nobuhiko Nakano

    IEEE Journal of Photovoltaics (IEEE)   2020.08

    Research paper (scientific journal), Joint Work, Accepted

  • Evaluation of p-Type 4H-SiC Piezoresistance Coefficients in (0001) Plane Using Numerical Simulation

    Sugiura T., Takahashi N., Nakano N.

    Materials Science Forum (Scientific.Net)  1004   249 - 255 2020.07

    Research paper (scientific journal), Joint Work, Accepted,  ISSN  9783035715798

     View Summary

    © 2020 Trans Tech Publications Ltd, Switzerland. A numerical simulation of p-type 4H-Silicon Carbide (4H-SiC) piezoresistance coefficients in (0001) plane evaluation is shown in this study. A 4H-SiC material has outstanding material characteristics of wide band-gap of 3.26 eV and high temperature robustness. However, many material properties of 4H-SiC material are still unknown, including piezoresistance coefficients. Piezoresistive effect is resistivity change when mechanical stress is applied to the material. Piezoresistance coefficients express the magnitude of this effect, important for designing a mechanical stress sensor. In this study, reported piezoresistance coefficients of p-type 4H-SiC in (0001) plane is evaluated based on numerical simulation. The simulated results of Gauge Factor (GF) values (determined by (ΔR/R)/ε (R is the resistance and ε is the strain of material)) well matched to the theoretical GF values (determined by πE (π is the piezoresistance coefficient and E is Young’s modulus of the material)), shows that reported piezoresistance coefficients are reliable. Also, the internal mappings of piezoresistive effect from the numerical simulation are shown, useful to understand piezoresistive effect which is difficult to see by experimental results.

  • The piezoresistive mobility modeling for cubic and hexagonal silicon carbide crystals

    Sugiura T., Takahashi N., Nakano N.

    Journal of Applied Physics 127 ( 24 )  2020.06

    Research paper (scientific journal), Joint Work, Accepted,  ISSN  00218979

     View Summary

    © 2020 Author(s). The piezoresistive effect is characterized by the change in the resistivity of a material relative to mechanical forces exerted on it. Such materials can be used as pressure sensors and are among the most important components for micro-electro mechanical system applications. To date, most research on the piezoresistive effect has been directed toward cubic crystalline materials such as Si; however, the prospective non-cubic materials, such as SiC, are known to have exciting and promising properties. SiC exhibits high-temperature robustness and is chemically stable. It is expected that these properties can be applied to a variety of applications. These materials fall in the category of hexagonal crystalline systems, and it is difficult to evaluate the piezoresistive properties of such materials. In this study, we discuss the piezoresistive mobility model that corresponds to both the cubic and the hexagonal crystalline systems. This mobility model is derived from the empirical fitting of the Gauge Factor (G F) values using the longitudinal and the transverse piezoresistive coefficients and the material-unique fitting parameters. Our proposed method has been implemented in the original device simulator and has been evaluated with respect to both Si and SiC materials. This report shows the well-matched G F values and suggests that the proposed piezoresistive effect model can be implemented in device simulation modeling.

  • Numerical analysis of p-type and n-type based carrier-selective contact solar cells with tunneling oxide thickness and bulk properties

    Sugiura T., Matsumoto S., Nakano N.

    Japanese Journal of Applied Physics (Japanese Journal of Applied Physics)  59 ( SG )  2020.04

    Research paper (scientific journal), Joint Work, Accepted,  ISSN  00214922

     View Summary

    © 2020 The Japan Society of Applied Physics. Tunnel Oxide Passivated Contact (TOPCon) is a c-Si solar cell structure with tunneling oxide near the rear electrode. A full-area tunneling oxide provides sufficient passivation and low internal resistance with 1D carrier transport. Carrier tunneling mechanism is the key factor of a TOPCon solar cell; the thicker the tunneling oxide, the better is its ability to prevent minority-carrier tunneling. However, excessively thick oxide degrades majority-carrier tunneling. Therefore, the relationship between tunneling oxide thickness and cell performance is important. In this study, TOPCon solar cell structures are evaluated by varying their tunneling oxide thickness and bulk properties for both p-type and n-type bulk using numerical simulation. It is observed that the difference in bulk type is crucial to TOPCon solar cell performance: n-type material shows better performance because of its smaller minority-carrier tunneling current density and wider range of effective tunneling oxide thickness compared to p-type.

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Papers, etc., Registered in KOARA 【 Display / hide

Presentations 【 Display / hide

  • An On-Chip Ultra-Low-Power Hz-Range Ring Oscillator Based on Dynamic Leakage Suppression Logic

    Jorge Cañada, Yui Yoshida, Hiroki Miura, Nobuhiko Nakano

    International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC 2020), 2020.07

  • Low-power High-Voltage Driver Based on Standard CMOS Technology for On-Chip Memory Recording

    Jorge Cañada, Yui Yoshida, Takashi Tonomura, Hiroki Miura, Nobihiko Nakano

    電子回路研究会 (日本大学理工学部駿河台校舎タワー・スコラ) , 2019.12, Oral Presentation(general), 電気学会

  • リングオシレータ用昇圧器付きクロスカップルチャージポンプ

    三浦 大毅, 吉田 祐威, 外村 崇史, Jorge Canada, 中野 誠彦

    電子回路研究会, 2019.12, Oral Presentation(general)

  • A delta-sigma modulator with frequency division multiplexing for multi-channel EEG acquisition front-end

    Mikawa M., Kawazoe S., Fukuoka R., Nakano N. 

    2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019, 2019.11, Poster (general)

  • Frequency Adjustable On-Chip Notch Filter to Eliminate Hum Noise for EEG Acquisition

    Ryuto Fukuoka, Syohei Kawazoe,Mikiyoshi Mikawa, and Nobuhiko Nakano

    2019 International Conference on Analog VLSI Circuits (Yilan, Taiwan) , 2019.10, Oral Presentation(general)

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Research Projects of Competitive Funds, etc. 【 Display / hide

  • 人工シナプス用多チャンネル膜電位固定LSIの実現

    2014
    -
    2017.03

    日本学術振興会, Grant-in-Aid for Scientific Research, 中野誠彦, Research grant, Principal Investigator

Awards 【 Display / hide

  • Certificate of Appreciation

    2020.06, IEICE Electronics Express Editorial Committee

    Type of Award: Other Awards

  • Taiwan and Japan Conference on Circuits and Systems 2019 Best student paper award

    Jorge Canada, Nobuhiko Nakano, 2019.08, IEEE CASS, An On-Chip Sub-pW Hz-Range Ring Oscillator

    Type of Award: Awards of International Conference, Council and Symposium.  Country: Japan

  • LSIとシステムのワークショップ優秀ポスター賞

    2017.05, 電子情報通信学会, 標準CMOSプロセスによるオンチップ太陽電池の高性能化

  • エレクトロニクスソサエティ功労賞

    2017.03, 電子情報通信学会

    Type of Award: Awards of Publisher, Newspaper Company and Foundation

  • 電気学会 論文発表賞

    中野 誠彦, 1992, 電気学会

 

Courses Taught 【 Display / hide

  • RECITATION IN ELECTRONICS AND INFORMATION ENGINEERING

    2021

  • NUMERICAL MODELING AND COMPUTATIONAL SIMULATION

    2021

  • LSI CIRCUIT DESIGN 1

    2021

  • LABORATORIES IN ELECTRONICS AND INFORMATION ENGINEERING(2)

    2021

  • INDEPENDENT STUDY ON INTEGRATED DESIGN ENGINEERING

    2021

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Courses Previously Taught 【 Display / hide

  • 電気電子工学実験第二

    Keio University, 2014, Autumn Semester, Major subject, Laboratory work/practical work/exercise, Lecturer outside of Keio

  • 計算機構成

    Keio University, 2014, Autumn Semester, Major subject, Lecture, Within own faculty

  • 理工学基礎実験

    Keio University, 2014, Spring Semester, Major subject, Laboratory work/practical work/exercise, Lecturer outside of Keio

  • 数値モデリングと計算機シミュレーション

    Keio University, 2014, Spring Semester, Major subject, Lecture, Within own faculty

  • 電気電子計測

    Keio University, 2014, Spring Semester, Major subject, Lecture, Within own faculty

 

Memberships in Academic Societies 【 Display / hide

  • 電気学会, 

    1992
    -
    Present
  • 応用物理学会, 

    1992.02
    -
    Present
  • シリコンテクノロジー分科会, 

    2017.04
    -
    Present
  • プラズマエレクトロニクス分科会, 

    1996.03
    -
    2016.05
  • 電子通信情報学会, 

    2009
    -
    Present

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Committee Experiences 【 Display / hide

  • 2020.06
    -
    Present

    CAS研究会専門委員, 電子情報通信学会

  • 2020.04
    -
    Present

    電子・情報・システム部門編修委員会委員, 電気学会

  • 2020.04
    -
    Present

    電子・情報・システム部門 役員会 委員, 電気学会

  • 2020.04
    -
    2022.03

    サステナブルコンピューティング特別研究会委員長, 電子情報通信学会

  • 2020.04
    -
    2021.03

    2020年電子・情報・システム部門大会委員会 委員, 電気学会

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