Papers - Miyamoto, Akihito

Highly Precise, Continuous, Long-Term Monitoring of Skin Electrical Resistance by Nanomesh Electrodes

Miyamoto A., Kawasaki H., Lee S., Yokota T., Amagai M., Someya T.

Advanced Healthcare Materials (Advanced Healthcare Materials)  11 ( 10 )  2022.05

ISSN  21922640

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The transepidermal water loss has been widely used as a method for directly evaluating the barrier function of the stratum corneum of the skin. However, transepidermal water loss could not be measured continuously for a long period of time, and there were no reports of continuous monitoring of skin barrier functions. Here, a method is reported to continuously monitor the skin electrical resistance by nanomesh electrodes for a long period of time while maintaining the natural skin condition that does not inhibit water evaporation. Simultaneous measurements of the skin electrical resistance by nanomesh electrodes and transepidermal water loss exhibits a linear fit with a high negative correlation. Furthermore, dynamics of skin physiological functions are successfully visualized by monitoring of the skin electrical resistance by nanomesh electrodes for 30 h in daily life.

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Electronic functional member and strain sensor

T Someya, A Miyamoto, Y Wang, Y Matsuba, I Kawashima

US Patent App. 17/442,787  2022

Electronic functional member, method for manufacturing same, and biological measurement sensor

T Someya, A Miyamoto, Y Wang, S Lee, S Nagai, I Kawashima

US Patent App. 17/436,251  2022

Skin impedance measurements with nanomesh electrodes for monitoring skin hydration

R Matsukawa, A Miyamoto, T Yokota, T Someya

Advanced Healthcare Materials 9 (22), 2001322 (Advanced Healthcare Materials)  9 ( 22 )  2020.11

ISSN  21922640

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The importance of continuous monitoring of skin hydration in daily life, to aid in the diagnosis of skin diseases, is rising. Electrodes that can be worn directly on the skin are attracting attention as an effective means. However, they should not inhibit natural water evaporation from the skin and should not cause inflammation or irritation even if they are attached to the body for long periods of time. In this study, nanomesh electrodes that have previously been reported to exhibit high biocompatibility are also found to exhibit high water vapor permeability, resulting in properties that prevent skin dampness. Furthermore, the skin impedance measured using nanomesh electrodes is found to correlate with the hydration level of skin measured using existing medical equipment. This study provides a new approach to measure skin hydration in conditions close to bare skin.

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All-nanofiber-based, ultrasensitive, gas-permeable mechanoacoustic sensors for continuous long-term heart monitoring

Nayeem M.O.G., Lee S., Jin H., Matsuhisa N., Jinno H., Miyamoto A., Yokota T., Someya T.

Proceedings of the National Academy of Sciences of the United States of America (Proceedings of the National Academy of Sciences of the United States of America)  117 ( 13 ) 7063 - 7070 2020.03

ISSN  00278424

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The prolonged and continuous monitoring of mechanoacoustic heart signals is essential for the early diagnosis of cardiovascular diseases. These bodily acoustics have low intensity and low frequency, and measuring them continuously for long periods requires ultrasensitive, lightweight, gas-permeable mechanoacoustic sensors. Here, we present an all-nanofiber mechanoacoustic sensor, which exhibits a sensitivity as high as 10,050.6 mV Pa-1 in the lowfrequency region (<500 Hz). The high sensitivity is achieved by the use of durable and ultrathin (2.5 μm) nanofiber electrode layers enabling a large vibration of the sensor during the application of sound waves. The sensor is ultralightweight, and the overall weight is as small as 5 mg or less. The devices are mechanically robust against bending, and show no degradation in performance even after 1,000- cycle bending. Finally, we demonstrate a continuous long-term (10 h) measurement of heart signals with a signal-to-noise ratio as high as 40.9 decibels (dB).

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Light-emitting device comprising flexible substrate and light-emitting element

H Iijima, A Miyamoto, K Sasai, Y Osada, M Izuchi

US Patent App. 16/686,254  2020

Light-emitting device comprising flexible substrate and light-emitting element

H Iijima, A Miyamoto, K Sasai, Y Osada, M Izuchi

US Patent 10,615,243  2020

Light-emitting device comprising flexible substrate and light-emitting element

H Iijima, A Miyamoto, K Sasai, Y Osada, M Izuchi

US Patent 9,991,326  2018

Inflammation-free, gas-permeable, lightweight, stretchable on-skin electronics with nanomeshes

A Miyamoto, S Lee, NF Cooray, S Lee, M Mori, N Matsuhisa, H Jin, ...

Nature nanotechnology 12 (9), 907-913 (Nature Nanotechnology)  12 ( 9 ) 907 - 913 2017.09

ISSN  17483387

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Thin-film electronic devices can be integrated with skin for health monitoring and/or for interfacing with machines. Minimal invasiveness is highly desirable when applying wearable electronics directly onto human skin. However, manufacturing such on-skin electronics on planar substrates results in limited gas permeability. Therefore, it is necessary to systematically investigate their long-term physiological and psychological effects. As a demonstration of substrate-free electronics, here we show the successful fabrication of inflammation-free, highly gas-permeable, ultrathin, lightweight and stretchable sensors that can be directly laminated onto human skin for long periods of time, realized with a conductive nanomesh structure. A one-week skin patch test revealed that the risk of inflammation caused by on-skin sensors can be significantly suppressed by using the nanomesh sensors. Furthermore, a wireless system that can detect touch, temperature and pressure is successfully demonstrated using a nanomesh with excellent mechanical durability. In addition, electromyogram recordings were successfully taken with minimal discomfort to the user.

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Thin film transistor, organic EL light emitting device, and method of fabricating thin film transistor

T Ukeda, A Miyamoto, N Nanai

US Patent 9,620,731  2017

Method for producing display panel, and display panel

N Nanai, T Ukeda, A Miyamoto

US Patent 9,312,283  2016

Electronic device and electronic device manufacturing method

A Miyamoto, Y Okumoto

US Patent 9,117,942  2015

Thin-film transistor element and method for producing same, organic el display element, and organic el display device

Y Okumoto, A Miyamoto, T Ukeda

US Patent 8,994,186  2015

Thin-film transistor element and method for producing same, organic EL display element and method for producing same, and organic EL display device

Y Okumoto, A Miyamoto, T Ukeda

US Patent 9,024,449  2015

Thin-film transistor element and method for manufacturing same, organic electroluminescent display element, and organic electroluminescent display device

Y Okumoto, A Miyamoto, T Ukeda

US Patent 8,941,115  2015

Thin-film transistor device and method for manufacturing same, organic electroluminescent display elements and organic electroluminescent display device

Y Okumoto, A Miyamoto, T Ukeda

US Patent 8,969,884  2015

Thin-film transistor device and method for manufacturing same, organic electroluminescent display element, and organic electroluminescent display device

Y Okumoto, A Miyamoto, T Ukeda

US Patent 8,946,730  2015

Thin-film transistor device and method for manufacturing same, organic electroluminescent display element, and organic electroluminescent display device

Y Okumoto, A Miyamoto, T Ukeda

US Patent 9,024,319  2015

Thin-film transistor and method of manufacturing the same

T Ukeda, A Miyamoto

US Patent 9,018,704  2015

Method of fabricating display panel

N Nanai, A Miyamoto, T Ukeda

US Patent 9,190,430  2015

Electronic device and electronic device manufacturing method

A Miyamoto, Y Okumoto

US Patent 9,112,162  2015

A flexible AMOLED display driven by organic TFTs with an inkjetted semiconductor layer

Miyamoto A., Okumoto Y., Sasai K., Morita K.

Kyokai Joho Imeji Zasshi/Journal of the Institute of Image Information and Television Engineers (Kyokai Joho Imeji Zasshi/Journal of the Institute of Image Information and Television Engineers)  68 ( 10 ) J437 - J441 2014

ISSN  13426907

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A 4-inch 80-ppi flexible AMOLED display was fabricated using organic TFTs with an inkjetted semiconductor layer on polymer gate insulator film. To suppress variations in organic TFT (OTFT) characteristics, the process damage to polymer gate insulator was remedied by surface treatments, and organic semiconductor crystallinity was improved by controlling the film thickness, giving a threshold voltage uniformity of -0.2 ± 0.45 V. We also observed the non-degradation of the OTFT characteristics even after bending it 200 times over a 5-mm radius.

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Thin-film transistor, display panel, and method for producing a thin-film transistor

Y Okumoto, A Miyamoto

US Patent 8,921,867  2014

Thin-film transistor device and method for manufacturing same, organic electroluminescent display element, and organic electroluminescent display device

Y Okumoto, A Miyamoto, T Ukeda

US Patent 8,907,344  2014

Semiconductor transistor manufacturing method, driving circuit utilizing a semiconductor transistor manufactured according to the semiconductor transistor manufacturing method …

Y Okumoto, A Miyamoto

US Patent 8,871,579  2014

Organic thin-film transistor and method of manufacturing organic thin-film transistor

T Ukeda, A Miyamoto

US Patent 8,916,863  2014

Bezel-less PMOLED modules with flexible substrates for scalable display system

Iijima H., Izuchi M., Makino H., Wakabayashi T., Sasai K., Okumoto Y., Miyamoto A., Morita K.

21st International Display Workshops 2014, IDW 2014 (21st International Display Workshops 2014, IDW 2014)  2   1407 - 1410 2014

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We have successfully demonstrated a bezel-less scalable display system by arraying bezel-less PMOLED modules. Each has a lifetime of40,000 hours life, 250-firn encapsulation width, l-mm pixel pitch and a flexible substrate. They were realized by SiN/SiN edge encapsulation and the adoption of a slide bending structure.

A flexible AMOLED display driven by organic TFTs with an inkjetted semiconductor layer

Miyamoto A., Okumoto Y., Sasai K., Morita K.

Proceedings of the International Display Workshops (Proceedings of the International Display Workshops)  1   348 - 349 2013

ISSN  18832490

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A 4-inch 80-ppi flexible AMOLED display was fabricated using organic TFTs with an inkjetted semiconductor layer. To suppress vanations in OTFT characteristics, the process damage to polymer gate insulator was re-covered by surface treatments, giving uniformity of threshold voltages of -0.2 ± 0.45 V.

Quantitative extraction of contact resistance at organic semiconductor - Metal electrode interface and impact of treatment on the contact resistance

Sasai K., Okumoto Y., Miyamoto A., Morita K., Fujisaki Y., Yamamoto T.

Proceedings of the International Display Workshops (Proceedings of the International Display Workshops)  1   237 - 240 2012.12

ISSN  18832490

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Contact resistance at the organic semiconductor (OSC) - metal electrode interface has been successfully estimated by transmission line method and AFM potentiometry. We have found that contact resistance of source edge was drastically reduced by surface treatment of UV/ozone or self-assembled monolayers of thiol before OSC fabrication at the first time.

Top‐emission AMOLED display driven by organic TFTs with semiconductor layer patterned by inkjet process

Y Okumoto, T Ukeda, M Matsui, K Okumoto, A Miyamoto, K Morita

Journal of the Society for Information Display 20 (10), 575-580  2012

Top-emission AM-OLED panel driven by organic TFTs with semiconductor layer patterned by ink-jet process

Okumoto Y., Ukeda T., Matsui M., Okumoto K., Miyamoto A., Morita K.

Proceedings of the International Display Workshops (Proceedings of the International Display Workshops)  1   191 - 192 2011.12

ISSN  18832490

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We have developed an ink-jet process for organic semiconductor (OSC) layer in organic thin film transistors (OTFTs). The OSC crystallinity was improved by adjusting contact angles. The OTFTs showed the high mobility of 2.5 cm 2/Vs. We also fabricated a 4-inches 80ppi AM-OLED on glass substrate, which performed good uniformity in luminance and high moving picture quality.

Vertical organic fet and method for manufacturing same

A Miyamoto

US Patent App. 12/393,531  2009

Non-volatile memory and the fabrication method

K Morita, N Yamada, A Miyamoto, T Ohtsuka, H Tanaka

US Patent 7,394,090  2008

Non-volatile memory and the fabrication method

K Morita, N Yamada, A Miyamoto, T Ohtsuka, H Tanaka

US Patent 7,232,703  2007

Non-volatile memory and fabrication method thereof

K Morimoto, H Tanaka, T Ohtsuka, A Miyamoto

US Patent 7,023,014  2006

Vertical organic FET and method for manufacturing same

A Miyamoto

US Patent App. 11/260,186  2006

Nonaqueous secondary battery, constituent elements of battery, and materials thereof

K Watanabe, K Nichogi, N Nanai, A Miyamoto, S Tsuchiya

US Patent App. 11/281,088  2006

Nonaqueous secondary battery, constituent elements of battery, and materials thereof

K Watanabe, K Nichogi, N Nanai, A Miyamoto, S Tsuchiya

US Patent App. 10/392,412  2003

Nonaqueous secondary battery, constituent elements of battery, and materials thereof

K Watanabe, K Nichogi, N Nanai, A Miyamoto, S Tsuchiya

US Patent App. 10/391,698  2003

Nonaqueous secondary battery, constituent elements of battery, and materials thereof

K Watanabe, K Nichogi, N Nanai, A Miyamoto, S Tsuchiya

US Patent 6,413,486  2002

Carbon materials for negative electrode of secondary battery and manufacturing process

K Watanabe, N Nanai, K Nichogi, A Miyamoto, S Tsuchiya

US Patent 6,316,146  2001

Nonaqueous secondary battery, constituent elements of battery, and materials thereof

K Watanabe, K Nichogi, N Nanai, A Miyamoto, S Tsuchiya

US Patent App. 09/878,613  2001

Electrical and Structural Properties and Phase Diagram of a Molecular Superconductor β-[(CH<inf>3</inf>)<inf>4</inf>N][Pd(dmit)<inf>2</inf>]<inf>2</inf>

Kobayashi A., Miyamoto A., Kato R., Sato A., Kobayashi H.

Bulletin of the Chemical Society of Japan (Bulletin of the Chemical Society of Japan)  71 ( 5 ) 997 - 1006 1998.05

ISSN  00092673

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β-[(CH3)4N][Pd(dmit)2]2 is isomorphic to [(CH3)4N][Ni(dmit)2]2, which is the first pure π acceptor molecular conductor exhibiting a superconducting transition. The crystal structure at low temperature, pressure dependence of the resistivity and the magnetic susceptibility of β-[(CH3)4N][Pd(dmit)2]2 were examined. The general features of the phase diagram of β-[(CH3)4N][Pd(dmit)2]2 resemble those of the organic superconductors. At ambient pressure, the resistivity increases gradually with lowering temperature. A superconducting transition was observed at 6-9 kbar. The highest Tc was 6.5 K. Between 5 and 6.3 kbar, a characteristic rapid resistivity decrease was observed at the small temperature range above the offset temperature of the superconducting transition. Although the resistivity is not zero, this temperature region can be regarded as a "pre-superconducting region, "Above 9 kbar the metallic state is stabilized down to low temperature. Above 5 kbar, most of the crystals exhibited resistivity anomalies around 60 K, which may be ascribed to the metalinsulator transition of the domains with α-type structure (α-[(CH4)4N][Pd(dmit)2]2), which became mixed in with the crystals of β-[(CH3)4N][Pd(dmit)2]2. The resistivity data of the highly conducting state were very noisy in the pressure range where the superconducting transition could be observed.

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Electrical and Structural Properties and Phase Diagram of a Molecular Superconductor β-[(CH3)4N][Pd(dmit)2]2

A Kobayashi, A Miyamoto, R Kato, A Sato, H Kobayashi

Bulletin of the Chemical Society of Japan 71 (5), 997-1006  1998

Master Thesis, Toho University Master Thesis, Toho University, 1992

A Kobayashi, A Miyamoto, R Kato, A SATO, H KOBAYASHI

Bulletin of the Chemical Society of Japan 71 (5), 997-1006  1998

Pattern classification in a perceptron circuit using lead phthalocyanine films

KNK Nichogi, AMA Miyamoto, MMM Murakami

Japanese journal of applied physics 36 (7R), 4509 (Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers)  36 ( 7 A ) 4509 - 4512 1997.07

ISSN  00214922

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Evaporated films of lead phthalocyanine (PbPc) show a unique conductivity change after a very slight amount of gases are adsorbed. The change in the conductivity of the films depends on the polarity and the strength of input voltages, and therefore is analogous to the change of synaptic connections in nerve systems. Therefore, a perceptron circuit has been fabricated using PbPc films as synaptic connections. After learning via loading of input signals and teacher signals, this circuit can classify random inputs of eight-dimensional voltage patterns into two categories when the input patterns are linearly separable.

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Development of Organic Thin Film Devices with Synaptic Plasticity and Their Application to the Neural Devices

K Nichogi, A Miyamoto, M Murakami

FED ジャ-ナル 8 (1), 43-46  1997

高圧力の科学と技術= The Review of high pressure science and technology 7, 532-534, 1998

A Kobayashi, A Miyamoto, R Kato, A SATO, H KOBAYASHI, N Hanasaki, ...

J. Phys. Soc. Jpn 65, 538  1996

Structural analysis of Langmuir-Blodgett films of alkylated tetracyanoquinodimethanes

KNK Nichogi, TNT Nambu, AMA Miyamoto, MMM Murakami

Japanese journal of applied physics 34 (9R), 4956 (Japanese Journal of Applied Physics)  34 ( 9R ) 4956 - 4962 1995.09

ISSN  00214922

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Structural characterization of alkylated tetracyanoquinodimethane (TCNQ) Langmuir and Langmuir-Blodgett (LB) films has been carried out. Scanning electron microscope (SEM) and atomic force microscope (AFM)observations reveal numerous platelet microcrystal domains in the alkylated TCNQ Langmuir films transferredonto a quartz substrate. The analysis of height distribution in the AFM data proves that these domains haveperiodic layered structure. The thickness of these layered structures agrees well with the d-values obtained byX-ray diffraction analysis of the alkylated TCNQ LB films. Moreover, the high-resolution AFM image and thed-value of the 2-dodecyl-TCNQ Langmuir film suggest that the structure of the second and the upper layers inthe domains is identical to that of the single crystal. SEM and AFM measurements prove that the LB filmsconsist of numerous platelet microcrystal domains which are superposed upon each other, resembling a mosaicstructure. Therefore, the periodic structures observed in X-ray diffraction measurements of the alkylated TCNQLB films are ascribed to the layered structure in these domains, although they are usually explained as well-definedmultilayered structure. © 1995 The Japan Society of Applied Physics.

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Structural control of evaporated lead-phthalocyanine films

A Miyamoto, K Nichogi, A Taomoto, T Nambu, M Murakami

Thin Solid Films 256 (1-2), 64-67 (Thin Solid Films)  256 ( 1-2 ) 64 - 67 1995.02

ISSN  00406090

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Monoclinic lead-phthalocyanine crystal film having only (320) orientation and monoclinic crystal film composed of lower (200)-and upper (320)-rich orientation were obtained at a substrate temperature of 293 K, and deposition rates higher than 1.0 nm s-1 and from 0.8 to 0.2 nm s-1, respectively. A film consisting of mixed triclinic and monoclinic crystals in which the distribution was almost homogeneous was obtained at a substrate temperature of 293 K and a deposition rate of 0.1 nm s-1, and a pure triclinic crystal film was obtained at a substrate temperature of 373 K. © 1995.

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New molecular superconductors, ß-[(CH<inf>3</inf>)<inf>4</inf>N][PD(dmit)<inf>2</inf>]<inf>2</inf> and [(CH<inf>3</inf>)<inf>2</inf>(C<inf>2</inf>H<inf>5</inf>)<inf>2</inf>N][Pd(dmit)<inf>2</inf>]<inf>2</inf>

Kobayashi A., Kato R., Clark R.A., Underhill A.E., Miyamoto A., Bun K., Naito T., Kobayashi H.

Synthetic Metals (Synthetic Metals)  56 ( 2-3 ) 2927 - 2932 1993.04

ISSN  03796779

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High-pressure resistivity studies on ß-[CH3)4N][Pd(dmit)2]2 and [(CH3C2H5)2N]-[Pd(dmit)2]2 have revealed the system to be new molecular superconductors with Tc=6.3 K at 6.5 kbar and Tc=4K at 2.4kbar, respectively. ß-[(CH3)4][Pd(dmit)2]2, though they have the isomorphous to the high-pressure superconductor, [(CH3)4N][Ni(dmit)2]2 has the structure almost dimeric columns of Pd(dmit)2 molecules. The determination of the phase diagram has revealed the existence of a narrow temperature region where the superconducting phase invades into the insulating phase. The crystal of [(CH3)2(C2H5)2N][Pd(dmit)2]2 belongs to triclinic system and has the dimeric columns of Pd(dmit)2. It is of interest that the insulating phase emerges when superconducting state is suppressed at high pressure. © 1993.

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Electrical and structural properties of κ-type organic conductor

T Naito, K Bun, A Miyamoto, H Kobayashi, H Sawa, R Kato, A Kobayashi

Synthetic metals 56 (1), 2234-2240 (Synthetic Metals)  56 ( 1 ) 2234 - 2240 1993.03

ISSN  03796779

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The electrical resistivities of organic metals with κ-type molecular arrangements were examined. Superconducting transition temperature (Tc) of alloy system κ-[(ET)1-x(STF)x]2 Cu[N(CN)2]Br (ET=BEDT-TTF, STF=BEDT-DSeDTF) is rapidly depressed with increase of the doping amount of the asymmetric π-donor STF. Tc becomes lower than 1.6 K at x>0.25 but the system retains metallic state at least up to x=0.6. The characteristic resistivity maximum is smeared with increasing x. The metal-insulator transition of κ-ET2Au(CN)2 at 70 K is suppressed by applying "soft pressure" of about 550 bar. The electrical properties and the crystal stuctures of κ-MT2Cu[N (CN)2]X (MT=BMDT-TTF, XCl, Br) were also examined. The crystal of κ-MT2Cu[N(CN)2]X belongs to monoclinic system with space group Cc. The structure of anion sheet closely resembles that of κ-MT2Cu[N(CN)2]X. The electrical resistivity decreases monotonously down to 2 K. © 1993.

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Mixed valency of Cu, electron-mass enhancement, and three-dimensional arrangement of magnetic sites in the organic conductors ( , -N,N’-dicyanoquinonediimine Cu …

H Kobayashi, A Miyamoto, R Kato, F Sakai, A Kobayashi, Y Yamakita, ...

Physical Review B 47 (7), 3500  1993

Mixed valency of Cu, electron-mass enhancement, and three-dimensional arrangement of magnetic sites in the organic conductors (R1,R2-N,N'-dicyanoquinonediimine)2Cu (where R1,R2=CH3,CH3O,Cl,Br)

Kobayashi H., Miyamoto A., Kato R., Sakai F., Kobayashi A., Yamakita Y., Furukawa Y., Tasumi M., Watanabe T.

Physical Review B (Physical Review B)  47 ( 7 ) 3500 - 3510 1993

ISSN  01631829

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The unique molecular conductors with pπ-d mixing band structures (R1,R2-N,N'-dicyanoquinonediimine)2Cu [(R1,R2-DCNQI)2Cu] (R1,R2=CH3,CH3O,Cl,Br) were examined. General features of the phase diagram of the DCNQI-Cu system were depicted. A region that is related to the existence of anomalously heavy-metal electrons has been found. The T2 dependence of the low-temperature resistivity of the alloyed system (DMe1-xMeBrx-DCNQI)2Cu (where Me=CH3) suggests a large enhancement of the electron mass at the critical situation where the system begins to exhibit a characteristic metal instability. The mixed valency of Cu (Cu+1.3) in (DMe-DCNQI)2Cu was confirmed by ir experiments performed on neutral DMe-DCNQI crystals and (DMe-DCNQI)2M (M=Li, Ba, Cu). The same conclusion was also derived from a low-temperature x-ray-diffraction experiment. The gradual temperature dependences of the ir absorption intensities of totally symmetric modes of (DBr-DCNQI)2Cu observed below the metal-insulator transition temperature (TMI) are in contrast with the discontinuous resistivity and susceptibility changes at TMI. This may be attributable to the existence of two driving forces characterizing the M-I transition. One is the sharp charge ordering in Cu sites and the other is the continuous development of charge-density waves on DCNQI stacks. The arrangement of Cu2+ and Cu+ below TMI was determined by an x-ray crystal-structure analysis of the threefold insulating phase of (MeBr-DCNQI)2Cu at 110 K. The nearest-neighbor Cu2+ ions interact with each other via two DCNQI molecules. A plausible spin structure of the antiferromagnetic ground state was proposed. According to this spin-structure model, the magnetic moments of Cu2+ along the crystallographic c axis will be arranged ferromagnetically. © 1993 The American Physical Society.

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New molecular superconductors, ß-[(CH3) 4N][PD (dmit) 2] 2 and [(CH3) 2 (C2H5) 2N][Pd (dmit) 2] 2

A Kobayashi, R Kato, RA Clark, AE Underhill, A Miyamoto, K Bun, T Naito, ...

Synthetic metals 56 (2-3), 2927-2932  1993

Chem., Int. Ed. Engl. Chem., Int. Ed. Engl. 25, 740, 1986

A MIYAMOTO, H KOBAYASHI, R KATO, A KOBAYASHI, Y NISHIO, ...

Chemistry letters 1992 (1), 115-118  1992

Superconducting Transition Temperature of the Organic Alloy System. κ-[(BEDT-TTF)1−x(BEDT-STF)x]2Cu[N(CN)2]Br

T Naito, A Miyamoto, H Kobayashi, R Kato, A Kobayashi1

Chemistry letters 21 (1), 119-122  1992

Metal Instability of (DMe-DCNQI)2Cu Induced by Uniaxial Stress and Enhancement of Electron Mass

A Miyamoto, H Kobayashi, R Kato, A Kobayashi, Y Nishio, K Kajita, ...

Chemistry letters 21 (1), 115-118  1992

Superconducting Transition Temperature of the Organic Alloy System.. KAPPA.-((BEDT-TTF) 1-x (BEDT-STF) x) 2Cu (N (CN) 2) Br.

T Naito, A Miyamoto, H Kobayashi, R Kato, A Kobayashi1

Chemistry letters, 119-122  1992

Instability of metallic state of DCNQICu system

Kobayashi H., Miyamoto A., Moriyama H., Nishio Y., Kajita K., Sasaki W., Sakai F., Kato R., Kobayashi A.

Physica C: Superconductivity and its applications (Physica C: Superconductivity and its applications)  185-189 ( PART 4 ) 2695 - 2696 1991.12

ISSN  09214534

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Electrical resistivity of (MeBrDCNQI)2Cu1-xLix shows that the metal-insulator transition of (MeBrDCNQI)2Cu at 155 K is rapidly suppressed with increasing x. The mixed-cation system with x=0.2-0.5 retains a metallic state down to 4 K. The metal instability of DCNQICu is discussed in the light of the mixed-valency of Cu. © 1991.

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Crystal structure and pressure dependence of electrical conductivities of [(CH3) 4N][Pt (dmit) 2] 2

A Kobayashi, A Miyamoto, H Kobayashi, A Clark, AE Underhill

Journal of Materials Chemistry 1 (5), 827-830  1991

Suppression of the Metal Instability and Continuous Change of the Carrier Density in (MeBr-DCNQI)2Cu1−xLix

H Kobayashi, A Miyamoto, H Moriyama, R Kato, A Kobayashi

Chemistry Letters 20 (5), 863-866  1991

Superconducting Transition of a Grease-Coated Crystal of κ-(BEDT-TTF)2Cu[N(CN)2]Cl

H Kobayashi, K Bun, A Miyamoto, T Naito, R Kato, A Kobayashi, ...

Chemistry Letters 20 (11), 1997-2000  1991

Structure and electrical properties of θ-and κ-type BEDT-TSeF salts with bromomercurate anions

T Naito, A Miyamoto, H Kobayashi, R Kato, A Kobayashi

Chemistry Letters 20 (11), 1945-1948  1991

Structural and Physical Properties of κ and θ-(BEDT-TSeF)2TaF6. Molecular Design Aimed Toward the Two-dimensional Metal

R Kato, A Kobayashi, A Miyamoto, H Kobayashi

Chemistry Letters 20 (6), 1045-1048  1991

New Molecular Superconductor, β-[(CH3)4N][Pd(dmit)2]2

A Kobayashi, H Kobayashi, A Miyamoto, R Kato, RA Clark, AE Underhill

Chemistry Letters 20 (12), 2163-2166  1991

Instability of metallic state of DCNQI�X Cu system

H Kobayashi, A Miyamoto, H Moriyama, Y Nishio, K Kajita, W Sasaki, ...

Physica C: Superconductivity 185, 2695-2696  1991

Crystal structure and pressure dependence of electrical conductivities of [(CH<inf>3</inf>)<inf>4</inf>N][Pt(dmit)<inf>2</inf>]<inf>2</inf>

Kobayashi A., Miyamoto A., Kobayashi H., Clark A., Underhill A.

Journal of Materials Chemistry (Journal of Materials Chemistry)  1 ( 5 ) 827 - 830 1991

ISSN  09599428

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The crystal structure and electrical conductivities (including the effect of pressure) of [(CH3)4N][Pt(dmit)2] 2 (dmit = 4,5-dimercapto-1,3-dithiole-2-thione) have been studied. The Pt(dmit)2 anions form dimeric structures arranged as one-dimensional stacks along the [110] and [110] directions. A simple band-energy calculation indicates that the conduction band is formed by the HOMO band of Pt(dmit)2 owing to the strong dimeric nature of the molecular stacks.

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Suppression of the metal instability and continuous change of the carrier density in (MeBr-DCNQI) 2Cu1-XLix.

H Kobayashi, A Miyamoto, H Moriyama, R Kato, A Kobayashi

Chemistry Letters, 863-866  1991

Superconducting Transition of a Grease-Coated Crystal of. KAPPA.-(BEDT-TTF) 2Cu (N (CN) 2) Cl.

H Kobayashi, K Bun, A Miyamoto, T Naito, R Kato, A Kobayashi, ...

Chemistry Letters, 1997-2000  1991

Structure and Electrical Properties of. THETA.-and. KAPPA.-Type BEDT-TSeF Salts with Bromomercurate Anions.

T Naito, A Miyamoto, H Kobayashi, R Kato, A Kobayashi

Chemistry Letters, 1945-1948  1991

Structural and Physical Properties of. KAPPA. and. THETA.-(BEDT-TSeF) 2TaF6. Molecular Design Aimed Toward the Two-dimensional Metal.

R Kato, A Kobayashi, A Miyamoto, H Kobayashi

Chemistry Letters, 1045-1048  1991

New Molecular Superconductor,. BETA.-((CH3) 4N)(Pd (dmit) 2) 2.

A Kobayashi, H Kobayashi, A Miyamoto, R Kato, RA Clark, AE Underhill

Chemistry Letters, 2163-2166  1991

Anomalous Temperature Dependence of the Resistivity of (DMeO-DCNQI) 2Cu at High Pressure

H Kobayashil, A Miyamoto, R Kato, Y Nishio, K Kajital, W Sasaki

The Physics and Chemistry of Organic Superconductors: Proceedings of the …  1990

Synthesis of 4, 5-Ethylenedithio-4′, 5′-(2-oxatrimethylenedithio) tetrathiafulvalene (EOTT) and Electrical Conductivities of Their Ion-Radical Salts

H Nakano, K Yamada, T Nogami, Y Shirota, A Miyamoto, H Kobayashi

Chemistry letters 19 (11), 2129-2132  1990

Synthesis of 4, 5-ethylenedithio-4', 5'-(2-oxatrimethylenedithio)-tetrathiafulvalene (EOTT) and electrical conductivities of their ion-radical salts.

H Nakano, K Yamada, T Nogami, Y Shirota, A Miyamoto, H Kobayashi

Chemistry letters, 2129-2132  1990

Reentrant behavior in the pressure-temperature dependence of the resistivity of (DMeO-DCNQI)<inf>2</inf>Cu

Kobayashi H., Miyamoto A., Kato R., Kobayashi A., Nishio Y., Kajita K., Sasaki W.

Solid State Communications (Solid State Communications)  72 ( 1 ) 1 - 5 1989.10

ISSN  00381098

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The electrical resistivities (ρ{variant}) of (DMeO-DCNQI)2Cu were measured up to 12.5 kbar and down to 1.5 K. Similar to (DMe-DCNQI)2Cu, (DMeO-DCNQI) 2Cu shows a pressure-induced metal instability. But the critical pressure (Pc = 8 kbar), above which the system exhibits the metal instability, is 102 times larger than that of (DMe-DCNQI)2Cu. Reentrance of the metallic phase was observed at 8-9.5 kbar. Above 10 kbar, the reentrant behavior disappears and the system undergoes a sharp metal-insulator transition. At the "reentrant pressure region", ρ{variant} begins to increase at Tmin with decreasing temperature (T) and reaches its maximum at Tmax. Between Tmin and Tmax, ρ{variant} is linearly dependent on log T indicating the scattering of conduction electrons by the magnetic ions (Cu2+): ρ=ρ0 + c log T. The content of Cu2+ seems to vary with pressure. This unique behavior suggests (DMeO-DCNQI)2Cu to be a new family of the dense Kondo materials. © 1989.

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