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Papers - Itoh, Kohei

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Bounds to Electron Spin Qubit Variability for Scalable CMOS Architecures

J. D. Cifuentes, T. Tanttu, W. Gilbert, J. Y. Huang, E. Vahapoglu, R.C. C. Leon, S. Serrano, D. Otter, D. Dunmore, P. Y. Mai, F. Schlattner, M. Feng, K. M. Itoh, N. Abrosimov, H.-J. Pohl, M. Thewalt, A. Laucht, C. H. Yang, C. C. Escott, W. H. Lim, F. E. Hudson, R. Rahman, A. S. Dzurak, and A. Saraiva

Nature Communications 15 4299 2024.05

Research paper (scientific journal), Joint Work, Corresponding author, Accepted

Silicon Spin Qubit Noise Characterization Using Real-Time Feedback Potocols and Wavelet Analysis

N. D. Stuyck, A. E. Seedhous, S. Serrano, T. Tanttu, W. Gilbert, J. Y. Huang, F. Hudson, K. M. Itoh, A. Laucht, W. H. Lim, C. H. Yang, A. Saraiva, and A. S. Dzurak

Appl. Phys. Lett. 124 114003 2024.03

Research paper (scientific journal), Joint Work, Corresponding author, Accepted

Navigating the 16-Dimensional Hilbert Space of a High-Spin Donor Qudit with Electric and Magnetic Fields

I. F. de Fuentes, T. Botzem, M. A. I. Johnson, A. Vaartjes, S. Asaad, V. Mourik, F. E. Hudson, K. M. Itoh, B. C. Johnson, A. M. Jakob, J. C. McCallum, D. N. Jamieson, A. S. Dzurak, and A. Morello

Nature Communications 15 1380 2024.02

Research paper (scientific journal), Joint Work, Accepted

Improved Placement Precision of Donor Spin Qubits in Silicon using Molecule Ion Implantation

D. Holmes, B. Wilhelm, A. M. Jakob, X. Yu, F. E. Hudson, K. M. Itoh, A. S. Dzurak, D. N. Jamieson, and A. Morello

Advanced Quantum Technologies 7 2300316 2024.01

Research paper (scientific journal), Joint Work, Accepted

Control of Dephasing in Spin Qubits During Coherent Transport in Silicon

M. Feng, J. Yoneda, W. Huang, Y. Su, T. Tanttu, C. H. Yang, J. D. Cifuentes, K. W. Chan, W. Gilbert, R. C. C. Leon, F. E. Hudson, K. M. Itoh, A. Laucht, A. S. Dzurak, and A. Saraiva

Phys. Rev. B 107 085427 2023.02

Research paper (scientific journal), Joint Work, Accepted

An Electrically Driven Single-Atom “Flip-Flop” Qubit

R. Savytskyy, T. Botzem, I. F. de Fuentes1, B, Joecker, J. J. Pla, F. E. Hudson, K. M. Itoh, A. M. Jakob, B. C. Johnson, D. N. Jamieson, A. S. Dzurak, and A. Morello

Sci. Adv. 9 eadd9408 2023.02

Research paper (scientific journal), Joint Work, Accepted

On-Demand Electrical Control of Spin Qubits

W. Gilbert, T. Tanttu, W. H. Lim, M. Feng, J. Y. Huang, J. D. Cifuentes, S. Serrano, P. Y. Mai, R. C. C. Leon, C. C. Escott, K. M. Itoh, N. V. Abrosimov, H.-J. Pohl, M. L. W. Thewalt, F. E. Hudson, A. Morello, A. Laucht, C. H. Yang, A. Saraiva, and A. S. Dzurak

Nature Nanotechnology 18 131 - 136 2023.01

Research paper (scientific journal), Joint Work, Accepted

Floquet Engineering Using Pulse Driving in a Diamond Two-Level System Under Large-Amplitude Modulation

S. Nishimura, K. M. Itoh, J. Ishi-Hayase, K. Sasaki, and K. Kobayashi

Phys. Rev. Appl. 18 064023 2022.12

Research paper (scientific journal), Joint Work, Accepted

Beating the Thermal Limit of Qubit Initialization with a Bayesian Maxwell's Demon

M. A. I. Johnson, M. T. Mądzik, F. E. Hudson, K. M. Itoh, A. M. Jakob, D. N. Jamieson, A. Dzurak, and A. Morello

Phys. Rev. X 12 041008 2022.10

Research paper (scientific journal), Joint Work, Accepted

Implementation of an Advanced Dressing Protocol for Global Qubit Control in Silicon

I. Hansen, A. E. Seedhouse, K. W. Chen, F. E. Hudson, K. M. Itoh, A. Laucht, A. Saraiva, C. H. Yang, and A. S. Dzurak

Appl. Phys. Rev. 9 031409 2022.09

Research paper (scientific journal), Joint Work, Accepted

Optimization of Optical Spin Readout of the Nitrogen-Vacancy Center in Diamond Based on Spin Relaxation Model

Y. Nakamura, H. Watanabe, H. Sumiya, K. M. Itoh, K. Sasaki, J. Ishi-Hayase, and K. Kobayashi

AIP Advances 12 055215 2022.05

Research paper (scientific journal), Joint Work, Accepted

Fast Bayesian Tomography of a Two-Qubit Gate Set in Silicon

T. J. Evans, W. Huang, J. Yoneda, R. Harper, T. Tanttu, K. W. Chan, F. E. Hudson, K. M. Itoh, A. Saraiva, C. H. Yang, A. S. Dzurak, and S. D. Bartlett

Phys. Rev. Appl. 17 024068 2022.02

Research paper (scientific journal), Joint Work, Accepted

Precision Tomography of a Three-Qubit Donor Quantum Processor in Silicon

M. T. Ma̧dzik, S. Asaad, A. Youssry, B. Joecker, K. M. Rudinger, E. Nielsen, K. C. Young, T. J. Proctor, A. D. Baczewski, A. Laucht, V. Schmitt, F. E. Hudson, K. M. Itoh, A. M. Jakob, B. C. Johnson, D. N. Jamieson, A. S. Dzurak, C. Ferrie, R. B.-Kohout, and A. Morello

Nature 601 348 - 353 2022.01

Research paper (scientific journal), Joint Work, Accepted

Electrical Control of the g tensor of the Fiest hole in a Silicon MOS Quantum Dot

S. D. Liles, F. Martins, D. S. Miserev, A. A. Kiselev, I. D. Thorvaldson, M. J. Rendell, I. K. Jin, F. E. Hudson, M. Veldhorst, K. M. Itoh, O. P. Sushkov, T. D. Ladd, A. S. Dzurak, and A. R. Hamilton

Phys. Rev. B 104 235303 2021.12

Research paper (scientific journal), Accepted

Efficient Discrete Feature Encording for Variational Quantum Classifier

H. Yano, Y. Suzuki, K. M. Itoh, R. Raymond, and N. Yamamoto

EEE Transactions on Quantum Engineering 2 3103214 2021.08

Research paper (scientific journal), Joint Work, Accepted

Coherent Spin Qubit Transport in Silicon

J. Yoneda, W. Huang, M. Feng, C. H. Yang, K. W. Chan, T. Tanttu, W. Gilbert, R. C. C. Leon, F. E. Hudson, K. M. Itoh, A. Morello, S. D. Bartlett, A. Laucht, A. Saraiva, and A. S. Dzurak

Nature Communications 12 4114 2021.07

Research paper (scientific journal), Joint Work, Accepted

Observation of Longitudinal Magnetic Fluctuations at a First-Order Ferromagnetic Quantum Phase Transition in UGe2

Y. Noma, H. Kotegawa, T. Kubo, H. Tou, H. Harima, Y. Haga, E. Yamamoto, Y. Ōnuki, K. M. Itoh, A. Nakamura, Y. Homma, F. Honda, and D. Aoki

J. Phys. Soc. Jpn. 90 073707 2021.06

Research paper (scientific journal), Joint Work, Accepted

Bell-State Tomography in a Silicon Many-Electron Artificial Molecule

R. C. C. Leon, C. H. Yang, J. C. C. Hwang, J. C. Lemyre, T. Tanttu, W. Huang, J. Y. Huang, F. E. Hudson, K. M. Itoh, A. Laucht, M. P.-Ladrière, A. Saraiva, and A. S. Dzurak

Nature Communications 12 3228 2021.05

Research paper (scientific journal), Joint Work, Accepted

Wide-Field Dynamic Magnetic Microscopy Using Double-Double Quantum Driving of a Diamond Defect Ensemble

Z. Kazi, I. M. Shelby, H. Watanabe, K. M. Itoh, V. Shutthanandan, P. A. Wiggins, and K.-M. C. Fu

Phys. Rev. Appl. 15 054032 2021.05

Research paper (scientific journal), Accepted

Materials Challenges and Opportunities for Quantum Computing Hardware

N. P. de Leon, K. M. Itoh, D. Kim, K. Mehta, T. E. Northup, H. Paik, B. S. Palmer, N. Samarth, S. Sangtawesin, and D. W. Steuerman

Science 372 2828 2021.04

Research paper (scientific journal), Joint Work, Accepted

Imaging Topological Spin Structures Using Light-Polarization and Magnetic Microscopy

T. Lenz, G. Chatzidrosos, Z. Wang, L. Bougas, Y. Dumeige, A. Wickenbrock, N. Kerber, J. Zázvorka, F. Kammerbauer, M. Kläui, Z. Kazi, K.-M. C. Fu, K. M. Itoh, H. Watanabe, and D. Budker

Phys. Lev. Appl. 15 024040 2021.02

Research paper (scientific journal), Joint Work, Accepted

Exchange Coupling in a Linear Chain of Three Quantum-Dot Spin Qubits in Silicon

K. W. Chan, H. Sahasrabudhe, W. Huang, Y. Wang, H. C. Yang, M. Veldhorst, J. C. C. Hwang, F. A. Mohiyaddin, F.E. Hudson, K. M. Itoh, A. Saraiva, A. Morello, A. Laucht, R. Rahman, and A. S. Dzurak

Nano Lett. 21 1517 - 1522 2021.01

Research paper (scientific journal), Joint Work, Accepted

Conditional Quantum Operation of Two Exchange-Coupled Single-Donor Spin Qubits in a MOS-Compatible Silicon Device

M. T. Ma̧dzik, A. Laucht, F. E. Hudson, A. M. Jakob, B. C. Johnson, D. N. Jamieson, K. M. Itoh, A. S. Dzurak, and A. Morello

Nature Communications 12 181 2021.01

Research paper (scientific journal), Joint Work, Accepted

Pauli Blockade in Silicon Quantum Dots with Spin-Orbit Control

A. E. Seedhouse, T. Tanttu, R. C. C. Leon, R. Zhao, K. Y. Tan, B. Hensen, F. E. Hudson, K. M. Itoh, J. Yoneda, C. H. Hwan, A. Morello, A. Laucht, N. Coppersmith, A. Saraiva, and A. S. Dzurak

PRX Quantum 2 010303 2021.01

Research paper (scientific journal), Joint Work, Accepted

Detection and Control of Single Proton Spins in a Thin Layer of Diamond Grown by Chemical Vapor Deposition

K. Sasaki, H. Watanabe, H. Sumiya, K. M. Itoh, and E. Abe

Appl. Phys. Lett. 117 114002 2020.09

Research paper (scientific journal), Joint Work, Accepted

Effect of Fluorine on the Suppression of Boron Diffusion in Pre-Amorphized Silicon

R. Kiga, M. Uematsu, and K. M. Itoh

J. Appl. Phys. 128 105701 2020.09

Research paper (scientific journal), Joint Work, Accepted

Controllable Freezing of the Nuclear Spin Bath in a Single-Atom Spin Qubit

M. T. Madzik, T. D. Ladd, F. E. Hudson, K. M. Itoh, A. M. Jakob, B. C. Johnson, J. C. McCallum, D. N. Jamieson, A. S. Dzural, A. Laucht, and A. Morello

Science Advances 6 442 2020.07

Research paper (scientific journal), Joint Work, Accepted

Spin Coherence and Depths of Single Nitrogen-Vacancy Centers Created by Ion Implantation into Diamond via Screening Masks

S. Ishizu, K. Sasaki, D. Misonou, T. Teraji, K. M. Itoh, and E, Abe

J. Appl. Phys. 127 244502 2020.06

Research paper (scientific journal), Joint Work, Accepted

Operation of a Silicon Quantum Processor Unit Cell above One Kelvin

C. H. Yang, R. C. C. Leon, J. C. C. Hwang, A. Saraiva, T. Tanttu, W. Huang, L. J. Camirand, K. W. Chan, K. Y. Tan, F. E. Hudson, K. M. Itoh, A. Morello, M. P.-Ladrière, A. Laucht, and A. S. Dzurak

Nature (Nature) 580 ( 7803 ) 350 - 354 2020.04

Research paper (scientific journal), Joint Work, Accepted, ISSN 00280836

© 2020, The Author(s), under exclusive licence to Springer Nature Limited. Quantum computers are expected to outperform conventional computers in several important applications, from molecular simulation to search algorithms, once they can be scaled up to large numbers—typically millions—of quantum bits (qubits)1–3. For most solid-state qubit technologies—for example, those using superconducting circuits or semiconductor spins—scaling poses a considerable challenge because every additional qubit increases the heat generated, whereas the cooling power of dilution refrigerators is severely limited at their operating temperature (less than 100 millikelvin)4–6. Here we demonstrate the operation of a scalable silicon quantum processor unit cell comprising two qubits confined to quantum dots at about 1.5 kelvin. We achieve this by isolating the quantum dots from the electron reservoir, and then initializing and reading the qubits solely via tunnelling of electrons between the two quantum dots7–9. We coherently control the qubits using electrically driven spin resonance10,11 in isotopically enriched silicon1228Si, attaining single-qubit gate fidelities of 98.6 per cent and a coherence time of 2 microseconds during ‘hot’ operation, comparable to those of spin qubits in natural silicon at millikelvin temperatures13–16. Furthermore, we show that the unit cell can be operated at magnetic fields as low as 0.1 tesla, corresponding to a qubit control frequency of 3.5 gigahertz, where the qubit energy is well below the thermal energy. The unit cell constitutes the core building block of a full-scale silicon quantum computer and satisfies layout constraints required by error-correction architectures8,17. Our work indicates that a spin-based quantum computer could be operated at increased temperatures in a simple pumped 4He system (which provides cooling power orders of magnitude higher than that of dilution refrigerators), thus potentially enabling the integration of classical control electronics with the qubit array18,19.

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Coherent Electrical Control of a Single High-Spin Nucleus in Silicon

S. Asaad, V. Mourik, B. Joecker, M. A. I. Johnson, A. D. Baczewski, H. R. Firgau, M. T. Mądzik, V. Schmitt, J. J. Pla, F. E. Hudson, K. M. Itoh, J. C. McCallum, A. S. Dzurak, A. Laucht, and A. Morello

Nature (Nature) 579 ( 7798 ) 205 - 209 2020.03

Research paper (scientific journal), Joint Work, Accepted, ISSN 00280836

© 2020, This is a U.S. government work and not under copyright protection in the U.S.; foreign copyright protection may apply. Nuclear spins are highly coherent quantum objects. In large ensembles, their control and detection via magnetic resonance is widely exploited, for example, in chemistry, medicine, materials science and mining. Nuclear spins also featured in early proposals for solid-state quantum computers1 and demonstrations of quantum search2 and factoring3 algorithms. Scaling up such concepts requires controlling individual nuclei, which can be detected when coupled to an electron4–6. However, the need to address the nuclei via oscillating magnetic fields complicates their integration in multi-spin nanoscale devices, because the field cannot be localized or screened. Control via electric fields would resolve this problem, but previous methods7–9 relied on transducing electric signals into magnetic fields via the electron–nuclear hyperfine interaction, which severely affects nuclear coherence. Here we demonstrate the coherent quantum control of a single 123Sb (spin-7/2) nucleus using localized electric fields produced within a silicon nanoelectronic device. The method exploits an idea proposed in 196110 but not previously realized experimentally with a single nucleus. Our results are quantitatively supported by a microscopic theoretical model that reveals how the purely electrical modulation of the nuclear electric quadrupole interaction results in coherent nuclear spin transitions that are uniquely addressable owing to lattice strain. The spin dephasing time, 0.1 seconds, is orders of magnitude longer than those obtained by methods that require a coupled electron spin to achieve electrical driving. These results show that high-spin quadrupolar nuclei could be deployed as chaotic models, strain sensors and hybrid spin-mechanical quantum systems using all-electrical controls. Integrating electrically controllable nuclei with quantum dots11,12 could pave the way to scalable, nuclear- and electron-spin-based quantum computers in silicon that operate without the need for oscillating magnetic fields.

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Coherent Spin Control of S-, P-, D- and F-Electrons in a Silicon Quantum Dot

R. C. C. Leon, C. H. Yang, J. C. C. Hwang, J. C. Lemyre, T. Tanttu, W. Huang, K.W. Chan, K. Y. Tan, F. E. Hudson, K. M. Itoh, A. Morello, A. Laucht, M. Pioro-Ladrière, A. Saraiva, and A. S. Dzurak

Nature Communications 11 ( 1 ) 797 2020.02

Research paper (scientific journal), Joint Work, Accepted

© 2020, The Author(s). Once the periodic properties of elements were unveiled, chemical behaviour could be understood in terms of the valence of atoms. Ideally, this rationale would extend to quantum dots, and quantum computation could be performed by merely controlling the outer-shell electrons of dot-based qubits. Imperfections in semiconductor materials disrupt this analogy, so real devices seldom display a systematic many-electron arrangement. We demonstrate here an electrostatically confined quantum dot that reveals a well defined shell structure. We observe four shells (31 electrons) with multiplicities given by spin and valley degrees of freedom. Various fillings containing a single valence electron—namely 1, 5, 13 and 25 electrons—are found to be potential qubits. An integrated micromagnet allows us to perform electrically-driven spin resonance (EDSR), leading to faster Rabi rotations and higher fidelity single qubit gates at higher shell states. We investigate the impact of orbital excitations on single qubits as a function of the dot deformation and exploit it for faster qubit control.

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Construction and Operation of a Tabletop System for Nanoscale Magnetometry with Single Nitrogen-Vacancy Centers in Diamond

D. Misonou, K. Sasaki, S. Ishizu, Y. Monnai, K. M. Itoh, and E. Abe

AIP Advances (AIP Advances) 10 ( 2 ) 025206 2020.02

Research paper (scientific journal), Joint Work, Accepted

© 2020 Author(s). A single nitrogen-vacancy (NV) center in diamond is a prime candidate for a solid-state quantum magnetometer capable of detecting single nuclear spins with prospective application to nuclear magnetic resonance (NMR) at the nanoscale. Nonetheless, an NV magnetometer is still less accessible to many chemists and biologists as its experimental setup and operational principle are starkly different from those of conventional NMR. Here, we design, construct, and operate a compact tabletop-sized system for quantum sensing with a single NV center, built primarily from commercially available optical components and electronics. We show that our setup can implement state-of-the-art quantum sensing protocols that enable the detection of single 13C nuclear spins in diamond and the characterization of their interaction parameters, as well as the detection of a small ensemble of proton nuclear spins on the diamond surface. This article provides extensive discussions on the details of the setup and the experimental procedures, and our system will be reproducible by those who have not worked on the NV centers previously.

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Oxidation-Enhanced Si Self-Diffusion in Isotopically Modulated Silicon Nanopillars

R. Kiga, S. Hayashi, S. Miyamoto, Y. Shimizu, Y. Nagai, T. Endoh, and K. M. Itoh

J. Appl. Phys. 127 045704 2020.01

Research paper (scientific journal), Joint Work, Accepted

Single-Spin Qubits in Isotopically Enriched Silicon at Low Magnetic Field

R. Zhao, T. Tanttu, K. Y. Tan, B. Hensen, K. W. Chan, J. C. C. Hwang, R. C. C. Leon, C. H. Yang, W. Gilbert, F. E. Hudson, K. M. Itoh, A. A. Kiselev, T. D. Ladd, A. Morello, A. Laucht, and A. S. Dzurak

Nature Communications (Nature Communications) 10 ( 1 ) 5500 2019.12

Research paper (scientific journal), Joint Work, Accepted

© 2019, The Author(s). Single-electron spin qubits employ magnetic fields on the order of 1 Tesla or above to enable quantum state readout via spin-dependent-tunnelling. This requires demanding microwave engineering for coherent spin resonance control, which limits the prospects for large scale multi-qubit systems. Alternatively, singlet-triplet readout enables high-fidelity spin-state measurements in much lower magnetic fields, without the need for reservoirs. Here, we demonstrate low-field operation of metal-oxide-silicon quantum dot qubits by combining coherent single-spin control with high-fidelity, single-shot, Pauli-spin-blockade-based ST readout. We discover that the qubits decohere faster at low magnetic fields with T2Rabi=18.6 μs and T2*=1.4 μs at 150 mT. Their coherence is limited by spin flips of residual 29Si nuclei in the isotopically enriched 28Si host material, which occur more frequently at lower fields. Our finding indicates that new trade-offs will be required to ensure the frequency stabilization of spin qubits, and highlights the importance of isotopic enrichment of device substrates for the realization of a scalable silicon-based quantum processor.

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Fidelity Benchmarks for Two-Qubit Gates in Silicon

W. Huang, C. H. Yang, K. W. Chan, T. Tanttu, B. Hensen, R. C. C. Leon, M. A. Fogarty, J. C. C. Hwang, F. E. Hudson, K. M. Itoh, A. Morello, A. Laucht, and A.S. Dzurak

Nature (Nature) 569 ( 7757 ) 532 - 536 2019.05

Research paper (scientific journal), Joint Work, Accepted, ISSN 00280836

© 2019, The Author(s), under exclusive licence to Springer Nature Limited. Universal quantum computation will require qubit technology based on a scalable platform1, together with quantum error correction protocols that place strict limits on the maximum infidelities for one- and two-qubit gate operations2,3. Although various qubit systems have shown high fidelities at the one-qubit level4–10, the only solid-state qubits manufactured using standard lithographic techniques that have demonstrated two-qubit fidelities near the fault-tolerance threshold6 have been in superconductor systems. Silicon-based quantum dot qubits are also amenable to large-scale fabrication and can achieve high single-qubit gate fidelities (exceeding 99.9 per cent) using isotopically enriched silicon11,12. Two-qubit gates have now been demonstrated in a number of systems13–15, but as yet an accurate assessment of their fidelities using Clifford-based randomized benchmarking, which uses sequences of randomly chosen gates to measure the error, has not been achieved. Here, for qubits encoded on the electron spin states of gate-defined quantum dots, we demonstrate Bell state tomography with fidelities ranging from 80 to 89 per cent, and two-qubit randomized benchmarking with an average Clifford gate fidelity of 94.7 per cent and an average controlled-rotation fidelity of 98 per cent. These fidelities are found to be limited by the relatively long gate times used here compared with the decoherence times of the qubits. Silicon qubit designs employing fast gate operations with high Rabi frequencies16,17, together with advanced pulsing techniques18, should therefore enable much higher fidelities in the near future.

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Electron Spin Relaxation of Single Phosphorus Donors in Metal-Oxide-Semiconductor Nanoscale Devices

S. B. Tenberg, S. Asaad, M. T. Madzik, M. A. I. Johnson, B. Joecker, A. Laucht, F. E. Hudson, K. M. Itoh, A. M. Jakob, B. C. Johnson, D. N. Jamieson, J. C. McCallum, A. S. Dzurak, R. Joynt, and A. Morello

Phys. Rev. B (Physical Review B) 99 ( 20 ) 205306 2019.05

Research paper (scientific journal), Joint Work, Accepted, ISSN 24699950

© 2019 American Physical Society. We analyze the electron spin relaxation rate 1/T1 of individual ion-implanted P31 donors in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with the aim of identifying spin relaxation mechanisms peculiar to the environment of the spins. The measurements are conducted at low temperatures (T≈100 mK) as a function of external magnetic field B0 and donor electrochemical potential μD. We observe a magnetic field dependence of the form 1/T1B05 for B03 T, corresponding to the phonon-induced relaxation typical of donors in the bulk. However, the relaxation rate varies by up to two orders of magnitude between different devices. We attribute these differences to variations in lattice strain at the location of the donor. For B03T, the relaxation rate changes to 1/T1B0 for two devices. This is consistent with relaxation induced by evanescent-wave Johnson noise created by the metal structures fabricated above the donors. At such low fields, where T1>1s, we also observe and quantify the spurious increase of 1/T1 when the electrochemical potential of the spin excited state |↑) comes in proximity to empty states in the charge reservoir, leading to spin-dependent tunneling that resets the spin to |↓). These results provide precious insights into the microscopic phenomena that affect spin relaxation in MOS nanoscale devices, and provide strategies for engineering spin qubits with improved spin lifetimes.

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Controlling Spin-Orbit Interactions in Silicon Quantum Dots Using Magnetic Field Direction

5. T. Tanttu, B. Hensen, K. W. Chan, C. H. Yang, W. Huang, M. Fogarty, F. Hudson, K. M. Itoh, D. Culcer, A. Laucht, A. Morello, and A. Dzurak

Phys. Rev. X (Physical Review X) 9 ( 2 ) 021028 2019.05

Research paper (scientific journal), Joint Work, Accepted

© 2019 authors. Published by the American Physical Society. Published by the American Physical Society under the terms of the »https://creativecommons.org/licenses/by/4.0/» Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI. Silicon quantum dots are considered an excellent platform for spin qubits, partly due to their weak spin-orbit interaction. However, the sharp interfaces in the heterostructures induce a small but significant spin-orbit interaction that degrades the performance of the qubits or, when understood and controlled, could be used as a powerful resource. To understand how to control this interaction, we build a detailed profile of the spin-orbit interaction of a silicon metal-oxide-semiconductor double quantum-dot system. We probe the derivative of the Stark shift, g-factor and g-factor difference for two single-electron quantum-dot qubits as a function of external magnetic field and find that they are dominated by spin-orbit interactions originating from the vector potential, consistent with recent theoretical predictions. Conversely, by populating the double dot with two electrons, we probe the mixing of singlet and spin-polarized triplet states during electron tunneling, which we conclude is dominated by momentum-term spin-orbit interactions that vary from 1.85 MHz up to 27.5 MHz depending on the magnetic field orientation. Finally, we exploit the tunability of the derivative of the Stark shift of one of the dots to reduce its sensitivity to electric noise and observe an 80% increase in T2∗. We conclude that the tuning of the spin-orbit interaction will be crucial for scalable quantum computing in silicon and that the optimal setting will depend on the exact mode of qubit operations used.

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Wide-Field Magnetic Imaging of Sub-50 nm Ferromagnetic Nanoparticles for Time-Resolved Bio-Mechanical Orientation Measurements

Z. Kazi, I. Shelby, N. Brunell, H. Watanabe, K. M. Itoh, P. Wiggins,and K.-M. Fu

2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings (2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings) 2019.05

Research paper (international conference proceedings), Joint Work

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Silicon Qubit Fidelities Approaching Incoherent Noise Limits via Pulse Engineering

C. H. Yang, K. W. Chan, R. Harper, W. Huang, T. Evans, J. C. C. Hwang, B. Hensen, A. Laucht, T. Tanttu, F. E. Hudson, S. T. Flammia, K. M. Itoh, A. Morello, S. D. Bartlett, and A. S. Dzurak

Nature Electronics (Nature Electronics) 2 ( 4 ) 151 - 158 2019.04

Research paper (scientific journal), Joint Work, Accepted

© 2019, The Author(s), under exclusive licence to Springer Nature Limited. Spin qubits created from gate-defined silicon metal–oxide–semiconductor quantum dots are a promising architecture for quantum computation. The high single qubit fidelities possible in these systems, combined with quantum error correcting codes, could potentially offer a route to fault-tolerant quantum computing. To achieve fault tolerance, however, gate error rates must be reduced to below a certain threshold and, in general, correlated errors must be removed. Here we show that pulse engineering techniques can be used to reduce the average Clifford gate error rates for silicon quantum dot spin qubits down to 0.043%. This represents a factor of three improvement over state-of-the-art silicon quantum dot devices and extends the randomized benchmarking coherence time to 9.4 ms. By including tomographically complete measurements in our randomized benchmarking, we infer a higher-order feature of the noise called the unitarity, which measures the coherence of noise. This, in turn, allows us to theoretically predict that average gate error rates as low as 0.026% may be achievable with further pulse improvements. These spin qubit fidelities are ultimately limited by incoherent noise, which we attribute to charge noise from the silicon device structure or the environment.

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Scalable Quantum Computing with Ion-Implanted Dopant Atoms in Silicon

A. Morello, G. Tosi, F. A. Mohiyaddin, V. Schmitt, V. Mourik, T. Botzem, A. Laucht J. J. Pla, S. Tenberg, R. Savytskyy, M. Madzik, F. Hudson, A. S. Dzurak, K. M. Itoh, A. M. Jakob, B. C. Johnson, J. C. McCallum, and D. M. Jamieson

Technical Digest - International Electron Devices Meeting, IEDM (Technical Digest - International Electron Devices Meeting, IEDM) 2018-December 6.2.1 - 6.2.4 2019.01

Joint Work, ISSN 9781728119878

© 2018 IEEE. We present a scalable strategy to manufacture quantum computer devices, by encoding quantum information in the combined electron-nuclear spin state of individual ion-implanted phosphorus dopant atoms in silicon. Our strategy allows a typical pitch between quantum bits of order 200 nm, and retains compatibility with the standard fabrication processes adopted in classical CMOS nanoelectronic devices. We theoretically predict fast and high-fidelity quantum logic operations, and present preliminary experimental progress towards the realization of a 'flip-flop' qubit system.

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Wide-field magnetic imaging of sub-50 nm ferromagnetic nanoparticles for time-resolved bio-mechanical orientation measurements

Kazi Z., Shelby I., Brunelle N., Watanabe H., Itoh K., Wiggins P., Fu K.

Optics InfoBase Conference Papers (Optics InfoBase Conference Papers) Part F127-CLEO_AT 2019 2019

ISSN 9781943580576

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Fabrication of Ge MOS with Low Interface Trap Density by ALD of Al2O3 on Epitaxially Grown Ge

R. Matsuoka, E. Shigesawa, S. Miyamoto, K. Sawano, and K. M. Itoh

Semicond. Sci. Technol. 34 014004 2018.12

Research paper (scientific journal), Joint Work, Accepted

Three-Dimensional Localization Spectroscopy of Individual Nuclear Spin with Sub-Angstrom Resolution

J. Zopes, K. S. Cujia, K. Sasaki, J. M. Boss, K. M. Itoh, and C. L. Degen

Nature Communications (Nature Communications) 9 ( 1 ) 4678 2018.12

Research paper (scientific journal), Joint Work, Accepted

© 2018, The Author(s). Nuclear magnetic resonance (NMR) spectroscopy is a powerful method for analyzing the chemical composition and molecular structure of materials. At the nanometer scale, NMR has the prospect of mapping the atomic-scale structure of individual molecules, provided a method that can sensitively detect single nuclei and measure inter-atomic distances. Here, we report on precise localization spectroscopy experiments of individual 13C nuclear spins near the central electronic sensor spin of a nitrogen-vacancy (NV) center in a diamond chip. By detecting the nuclear free precession signals in rapidly switchable external magnetic fields, we retrieve the three-dimensional spatial coordinates of the nuclear spins with sub-Angstrom resolution and for distances beyond 10 Å. We further show that the Fermi contact contribution can be constrained by measuring the nuclear g-factor enhancement. The presented method will be useful for mapping atomic positions in single molecules, an ambitious yet important goal of nanoscale nuclear magnetic resonance spectroscopy.

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Coherent control of solid state nuclear spin nano-ensembles

Unden T., Tomek N., Weggler T., Frank F., London P., Zopes J., Degen C., Raatz N., Meijer J., Watanabe H., Itoh K.M., Plenio M.B., Naydenov B., Jelezko F.

npj Quantum Information (npj Quantum Information) 4 ( 1 ) 2018.12

© 2018, The Author(s). Detecting and controlling nuclear spin nano-ensembles is crucial for the further development of nuclear magnetic resonance (NMR) spectroscopy and for the emerging solid state quantum technology. Here we present the fabrication of a ≈1 nanometre thick diamond layer consisting of 13C nuclear spins doped with nitrogen-vacancy centres (NV) embedded in a spin-free 12C crystal matrix. A single NV in the vicinity of the layer is used for polarization of the 13C spins and the readout of their magnetization. We demonstrate a method for coherent control of few tens of nuclear spins by using radio frequency pulses, and show the basic coherent control experiments, Rabi oscillations and Ramsey spectroscopy, though any NMR pulse sequence can be implemented. The results shown here present an important step towards the realization of a nuclear spin based quantum simulator.

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Study on Al2O3/Ge Interface Formed by ALD Directly on Epitaxial Ge

E. Shigesawa, R. Matsuoka, M. Fukumoto, R. Sano, K. M. Itoh, H. Nohira, and K. Sawano

Sci. Technol. 33 124020 2018.11

Research paper (scientific journal), Joint Work, Accepted

Assessment of a Silicon Quantum Dot Spin Qubit Environment via Noise Spectroscopy

K. W. Chen, W. Huang, C. H. Yang, J. C. C. Hwang, B. Hensen, T. Tanttu, F. E. Hudson, K. M. Itoh, A. Laucht, A. Morello, A. S. Dzurak

Phys. Rev. Applied (Physical Review Applied) 10 ( 4 ) 044017 2018.10

Research paper (scientific journal), Joint Work, Accepted

© 2018 American Physical Society. Preserving coherence long enough to perform meaningful calculations is one of the major challenges on the pathway to large-scale quantum-computer implementations. Noise coupled in from the environment is the main factor contributing to decoherence but can be mitigated via engineering design and control solutions. However, this is possible only after acquisition of a thorough understanding of the dominant noise sources and their spectrum. In the work reported here, we use a silicon quantum dot spin qubit as a metrological device to study the noise environment experienced by the qubit. We compare the sensitivity of this qubit to electrical noise with that of an implanted silicon-donor qubit in the same environment and measurement setup. Our results show that, as expected, a quantum dot spin qubit is more sensitive to electrical noise than a donor spin qubit due to the larger Stark shift, and the noise-spectroscopy data show pronounced charge-noise contributions at intermediate frequencies (2-20 kHz).

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Coherent Control via Weak Measurements in 31P Single-Atom Electron and Nuclear Spin Qubits

J. T. Muhonen, J. P. Dehollain, A. Laucht, S. Simmons, R. Kalra, F. E. Hudson, A. S. Dzurak, A. Morello, D. N. Jamieson, J. C. McCallum, and K. M. Itoh

Phys. Rev. B (Physical Review B) 98 ( 15 ) 155201 2018.10

Research paper (scientific journal), Joint Work, Accepted, ISSN 24699950

© 2018 American Physical Society. The understanding of weak measurements and interaction-free measurements has greatly expanded the conceptual and experimental toolbox to explore the quantum world. Here we demonstrate single-shot variable-strength weak measurements of the electron and nuclear spin states of a P31 single-atom donor in silicon. We first show how the partial collapse of the nuclear spin due to measurement can be used to coherently rotate the spin to a desired pure state. We explicitly demonstrate that phase coherence is preserved with high fidelity throughout multiple sequential single-shot weak measurements and that the partial state collapse can be reversed. Second, we use the relation between measurement strength and perturbation of the nuclear state as a physical meter to extract the tunnel rates between the P31 donor and a nearby electron reservoir from data conditioned on observing no tunneling events. Our experiments open avenues to measurement-based state preparation, steering and feedback protocols for spin systems in the solid state, and highlight the fundamental connection between information gain and state modification in quantum mechanics.

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Determination of the Position of a Single Nuclear Spin from Free Nuclear Precessions Detected by a Solid-State Quantum Sensor

K. Sasaki, K. M. Itoh, and E. Abe

Phys. Rev. B (Physical Review B) 98 ( 12 ) 121405 2018.09

Research paper (scientific journal), Joint Work, Accepted, ISSN 24699950

© 2018 American Physical Society. We report on a nanoscale quantum sensing protocol which tracks a free precession of a single nuclear spin and is capable of estimating an azimuthal angle - a parameter which standard multipulse protocols cannot determine - of the target nucleus. Our protocol combines pulsed dynamic nuclear polarization, a phase-controlled radio-frequency pulse, and a multipulse ac sensing sequence with a modified readout pulse. Using a single nitrogen-vacancy center as a solid-state quantum sensor, we experimentally demonstrate this protocol on a single C13 nuclear spin in diamond and uniquely determine the lattice site of the target nucleus. Our result paves the way for magnetic resonance imaging at the single-molecular level.

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Fabrication of Arrays of Tapered Silicon Micro-/Nano-Pillars by Metal-Assisted Chemical Etching and Anisotropic Wet Etching

K. Yamada, M. Yamada, H. Maki, and K. M. Itoh

Nanotechnology (Nanotechnology) 29 ( 28 ) 28LT01 2018.05

Research paper (scientific journal), Joint Work, Accepted, ISSN 09574484

© 2018 IOP Publishing Ltd. Fabrication of a 2D square lattice array of intentionally tapered micro-/nano-silicon pillars by metal-assisted chemical etching (MACE) of silicon wafers is reported. The pillars are square rod shaped with the cross-sections in the range 0.2, 0.2-0.9, 0.9 μm2 and heights 3-7 μm. The spacing between pillars in the 2D square lattice was controlled between 0.5 and 3.0 μm. While the pillars after MACE had the high aspect ratio ∼1:5, subsequent anisotropic wet etching in potassium hydroxide solution led to 80°-89.5° tapers with smooth sidewalls. The resulting taper angle showed the relation with geometry of pillar structures; the spacing 0.5-3.0 μm led to the tapering angle 89.5°-80° for 3 and 5 μm tall pillars but 7 μm tall pillars showed no dependency between the tapering angle and the inter-pillar spacing. Such an array of silicon tapered-rods with smooth sidewalls is expected to be applicable as a mold in nanoimprinting applications.

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73Ge-NMR study on magnetic fluctuations of ferromagnetic superconductor UGe<inf>2</inf>

Y. Noma, H. Kotegawa, T. Kubo, H. Tou, H. Harima, Y. Haga, E. Yamamoto, Y. Onuki, K. M. Itoh, E. E. Haller, A. Nakamura, Y. Homma, F. Honda, and D. Aoki

Physica B: Condensed Matter (Physica B: Condensed Matter) 536 543 - 545 2018.05

Research paper (scientific journal), Joint Work, Accepted, ISSN 09214526

© 2017 We report 73Ge-NMR measurement on the ferromagnetic superconductor UGe2 at ambient pressure. The observed NMR spectrum supports that the electric field gradient at three inequivalent Ge sites is correctly deduced by a LDA calculation. The temperature dependences of the nuclear spin lattice relaxation rate 1/T1 for H0⊥a (easy axis) and H0∥a were obtained for the oriented sample. The contrasting behavior in 1/T1 for H0⊥a and H0∥a reveals that the magnetic fluctuation of UGe2 is highly anisotropic.

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Electron spin resonance identification di-carbon-related centers in irradiated silicon

S. Hayashi, H. Saito, K. M. Itoh, M. P. Vlasenko, and L. S. Vlasenko

J. Appl. Phys. (Journal of Applied Physics) 123 ( 16 ) 2018.04

Research paper (scientific journal), Joint Work, Accepted, ISSN 00218979

© 2018 Author(s). A previously unreported electron spin resonance (ESR) spectrum was found in γ-ray irradiated silicon by the detection of the change in microwave photoconductivity arising from spin-dependent recombination (SDR). In the specially prepared silicon crystals doped by 13C isotope, a well resolved hyperfine structure of SDR-ESR lines due to the interaction between electrons and two equivalent carbon atoms having nuclear spin I = 1/2 was observed. The Si-KU4 spectrum is described by spin Hamiltonian for spin S = 1 and of g and D tensors of orthorhombic symmetry with principal values g1 = 2.008, g2 = 2.002, and g3 =2.007; and D1 = ± 103 MHz, D2 = 170 MHz, and D3 = ± 67 MHz where axes 1, 2, and 3 are parallel to the [11-0], [110], and [001] crystal axes, respectively. The hyperfine splitting arising from 13C nuclei is about 0.35 mT. A possible microstructure of the detect leading to the Si-KU4 spectrum is discussed.

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Electron spin resonance study of surface and oxide interface spin-triplet centers on (100) silicon wafers

H. Saito, S. Hayashi, Y. Kusano, K. M. Itoh, M. P. Vlasenko, and L. S. Vlasenko

J. Appl. Phys. 123 ( 16 ) 161582 2018.04

Research paper (scientific journal), Accepted, ISSN 00218979

© 2018 Author(s). Electron spin resonance (ESR) spectra of surface and interface recombination centers recently observed on (001) silicon wafers, labeled Pm and KU1, were studied using spin dependent microwave photoconductivity. Both ESR spectra, having the orthorhombic symmetry and spins S = 1/2 and S = 1 for Pm and KU1, respectively, were observed in the commercially available surface oxidized (001)-Si wafers. Systematic studies on annealing and oxidation conditions for the Pm and KU1 formation conclude that both ESR spectra arise from the same center that contains the interaction between the two nearest Si dangling bonds on the (001) Si surface.

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Anisotropic Magnetic Fluctuations in Ferromagnetic Supweconductor UGe2: 73Ge-NQR Study at Ambient Pressure

Y. Noma, H. Kotegawa, T. Kubo, H. Tou, H. Harima, Y. Haga, E. Yamamoto, Y. Onuki, K. M. Itoh, E. E. Haller, A. Nakamura, Y. Homma, R. Honda, and D. Aoki

J. Phys. Soc. Jpn. 87 033704 2018.02

Research paper (scientific journal), Joint Work, Accepted

Defects for quantum information processing in silicon

Abe E., Itoh K.M.

Defects in Advanced Electronic Materials and Novel Low Dimensional Structures (Defects in Advanced Electronic Materials and Novel Low Dimensional Structures) 241 - 263 2018.01

ISSN 9780081020548

© 2018 Elsevier Ltd. All rights reserved. In this chapter, we discuss defects in silicon, primarily focusing on phosphorus donors, from the viewpoint of quantum information processing. We start with a historical perspective on our understanding of the limits to information processing. In doing so, we illuminate why we are so excited about the recent experimental challenges to realize silicon-based quantum computers. After reviewing the spin physics of donors in silicon, we discuss the coherence properties of donor electron and nuclear spins, and evaluate their feasibilities as carriers of quantum information, quantum bits. Recent developments in coherent control of single donor spins in silicon nanoelectronic devices are then outlined.

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Anisotropic magnetic fluctuations in ferromagnetic superconductor UGe<inf>2</inf>:<sup>73</sup>Ge-NQR study at ambient pressure

Noma Y., Kotegawa H., Kubo T., Tou H., Harima H., Haga Y., Yamamoto E., Ōnuki Y., Itoh K., Haller E., Nakamura A., Homma Y., Honda F., Aoki D.

Journal of the Physical Society of Japan (Journal of the Physical Society of Japan) 87 ( 3 ) 2018

ISSN 00319015

© 2018 The Physical Society of Japan. We report a 73Ge nuclear quadrupole resonance reinvestigation of the ferromagnetic (FM) superconductor UGe2 at ambient pressure. Careful measurement and analysis of the paramagnetic (PM) spectrum taking into account the calculated electric field gradient (EFG) resulted in modification of the previously reported site assignments for three inequivalent Ge sites. The crossover anomaly at Tx in the FM state is not clearly seen in the temperature dependence of the static internal field at the Ge site, whereas it appears in the nuclear spin–lattice relaxation rate, 1/T1. A remarkable site dependence of 1/T1 is observed among the inequivalent Ge sites, where the directions of the principal axes of the EFG are different. This result reveals that the magnetic fluctuation of UGe2 is highly anisotropic, which is consistent with the presence of Ising magnetic fluctuations in the PM state.

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High-Resolution Quantum Sensing with Shaped Control Pulses

J. Zopes, K. Sasaki, K. S. Cujia, J. M. Boss, K. Chang, T. F. Segawa, K. M. Itoh, and C. L. Degen

Phys. Rev. Lett. 119 260510 2017.12

Research paper (scientific journal), Joint Work, Accepted

A Quantum-Dot Spin Qubit with Coherence Limited by Charge Noise and Fidelity Higher Than 99.9%

J. Yoneda, K. Takeda, T. Otsuka, T. Nakajima, M. R. Delbecq, G. Allison, T. Honda, T. Kodera, S. Oda, Y. Hoshi, N. Usami, K. M. Itoh, and S. Tarucha

Natuere Nanotechnology (Nature Nanotechnology) 13 ( 2 ) 102 - 106 2017.12

Research paper (scientific journal), Joint Work, Accepted, ISSN 17483387

© 2017 The Author(s). The isolation of qubits from noise sources, such as surrounding nuclear spins and spin-electric susceptibility 1-4, has enabled extensions of quantum coherence times in recent pivotal advances towards the concrete implementation of spin-based quantum computation. In fact, the possibility of achieving enhanced quantum coherence has been substantially doubted for nanostructures due to the characteristic high degree of background charge fluctuations 5-7 . Still, a sizeable spin-electric coupling will be needed in realistic multiple-qubit systems to address single-spin and spin-spin manipulations 8-10. Here, we realize a single-electron spin qubit with an isotopically enriched phase coherence time (20 μs) 11,12 and fast electrical control speed (up to 30 MHz) mediated by extrinsic spin-electric coupling. Using rapid spin rotations, we reveal that the free-evolution dephasing is caused by charge noise - rather than conventional magnetic noise - as highlighted by a 1/f spectrum extended over seven decades of frequency. The qubit exhibits superior performance with single-qubit gate fidelities exceeding 99.9% on average, offering a promising route to large-scale spin-qubit systems with fault-tolerant controllability.

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Coherent Rabi Dynamics of a Superradiant Spin Ensemble in a Microwave Cavity

B. C. Rose, A. M. Tyryshkin, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, M. L. W. Thewalt, K. M. Itoh, and S. A. Lyon

Phys. Rev. X 7 031002 2017.07

Research paper (scientific journal), Joint Work, Accepted

Multiple-Quantum Transitions and Charge-Induced Decoherence of Donor Nuclear Spins in Silicon

D. P. Franke, M. P. D. Pfluger, K. M. Itoh, and M. S. Brandt

Phys. Rev. Lett. 118 246401 2017.06

Research paper (scientific journal), Joint Work, Accepted

Nitrogen-Vacancy Centers Created by N+ Ion Implantation Through Screening SiO2 Layers on Diamond

K. Ito, H. Saito, K. Sasaki, H. Watanabe, T. Teraji, K. M. Itoh, and E. Abe

Appl. Phys. Lett. 110 213105 2017.05

Research paper (scientific journal), Joint Work, Accepted

Dynamic Nuclear Polarization Enhanced Magnetic Field Sensitivity and Decoherence Spectroscopy of an Ensemble of Near-Surface Nitrogen-Vacancy Centers in Diamond

K. Sasaki, E. E. Kleinsasser, Z. Zhu, W.-D. Li, H. Watanabe, K.-M. Fu, K. M. Itoh, and E. Abe

Appl. Phys. Lett 110 192407 2017.05

Research paper (scientific journal), Joint Work, Accepted

Fabrication of Germanium Nanodisk Array by Neutral Beam Etching with Protein as Etching Mask

T. Fujii, T. Okada, T. Isoda, M. E. Syazwan, M.-T. Chentir, K. M. Itoh, I. Yamashita, and S. Samukawa

J. Vac. Sci. Technol. B 35 ( 2 ) 02180 2017.02

Research paper (scientific journal), Joint Work, Accepted

Electron Nuclear Double Resonance with Donor-Bound Excitons in Silicon

D. P. Franke, M. Szech, Fl. M. Hrubesch, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, K. M. Itoh, M. L. W. Thewalt, and M. S. Brandt

Phys. Rev. B 94 235201 2016.12

Research paper (scientific journal), Joint Work, Accepted

Quadrupole Shift of Nuclear Magnetic Resonance of Donors in Silicon at Low Magnetic Field

P. A. Mortemousque, S. Rosenius, G. Pica, D. P. Franke, T. Sekiguchi, A. Truong, M. P. Vlasenko, L. S. Vlasenko, M. S. Brandt, R. G. Elliman, and K. M. Itoh

Nanotechnology 27 494001 2016.11

Research paper (scientific journal), Joint Work, Accepted

Polarization- and Frequency-Tunable Microwave Circuit for Selective Excitation of Nitrogen-Vacancy Spins in Diamond

J. Herrmann, M. A. Appleton, K. Sasaki, Y. Monnai, T. Teraji, K. M. Itoh, and E. Abe

Appl. Phys. Lett. 109 183111 2016.11

Research paper (scientific journal), Joint Work, Accepted

A Dressed Spin Qubit in Silicon

A. Laucht, R. Kalra, S. Simmons, J. P. Dehollain, J. T. Muhonen, F. A. Mohiyaddin, S. Freer, F. E. Hudson, K. M. Itoh, D.N. Jamieson, J. C. McCallum, A. S. Dzurak, and A. Morello

Nature Nanotechnology 12 61 - 66 2016.10

Research paper (scientific journal), Joint Work, Accepted

Breaking the Rotating Wave Approximation for a Strongly Driven Dressed Single-Electron Spin

A. Laucht, S. Simmons, R. Kalra, G. Tosi, J. P. Dehollain, J. T. Muhonen, S. Freer, F. E. Hudson, K. M. Itoh, D. N. Jamieson, J. C. McCallum, A. S. Dzurak, and A. Morello

Phys. Rev. B 94 161302(R) 2016.10

Research paper (scientific journal), Joint Work, Accepted

Large Stark Tuning of Donor Electron Spin Qubits in Germanium

A. J. Sigillito, A. M. Tyryshkin, J. W. Beeman, E. E. Haller, K. M. Itoh, and S. A. Lyon

Phys. Rev. B 94 125204 2016.09

Research paper (scientific journal), Joint Work, Accepted

Formation of Nitrogen-Vacancy Centers in Homoepitaxial Diamond Thin Films Grown via Microwave Plasma-Assisted Chemical Vapor Deposition

H. Watanabe, H. Umezawa, T. Ishikawa, K. Kaneko, S. Shikata, J. Ishi-Hayase, and K. M. Itoh

IEEE Transactions on Nanotechnology 15 ( 4 ) 614 - 618 2016.07

Research paper (scientific journal), Joint Work, Accepted

Broadband, Large-Area Microwave Antenna for Optically Detected Magnetic Resonance of Nitrogen-Vacancy Centers in Diamond

K. Sasaki, Y. Monnai, S. Saijo, R. Fujita, H. Watanabe, J. Ishi-Hayase, K. M. Itoh, and E. Abe

Rev. Sci. Instrum. 87 053904 2016.05

Research paper (scientific journal), Joint Work, Accepted

High Density Nitrogen-Vacancy Sensing Surface Created Via He+ Ion Implantation of 12C Diamond

E. E. Kleinsasser, M. M. Stanfield, J. K. Q. Banks, Z. Zhu, W.-D. Li, V. M. Acosta, H. Watanabe, K. M. Itoh, and K.-M. C. Fu

Appl. Phys. Lett. 108 202401 2016.05

Research paper (scientific journal), Joint Work, Accepted

Quadrupolar Effects on Nuclear Spins of Neutral Arsenic Donors in Silicon

D. P. Franke, M. P. D. Pfl¨uger, P.-A. Mortemousque, K. M. Itoh, and M. S. Brandt

Phys. Rev. Lett. 93 161303 (R) 2016.04

Research paper (scientific journal), Joint Work, Accepted

Nuclear Spin Decoherence of Neutral 31P Donors in Silicon: Effect of Environmental 29Si Nuclei

E. S. Petersen, A. M. Tyryshkin, J. J. L. Morton, E. Abe, S. Tojo, K. M. Itoh, M. L. W. Thewalt, and S. A. Lyon

Phys. Rev. B 93 161202(R) 2016.04

Research paper (scientific journal), Joint Work, Accepted

Bell’s Inequality Violation with Spins in Silicon

J. P. Dehollain, S. Simmons, J. T. Muhonen, R. Kalra, A. Laucht, F. Hudson, K. M. Itoh, D. N. Jamieson, J. C. McCallum, A. S. Dzurak, and A. Morello

Nature Nanotechnology 11 242 - 246 2016.03

Research paper (scientific journal), Joint Work, Accepted

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Effect of Carbon Situating at End-of-Range Defects on Silicon Self-Diffusion Investigated Using Pre-Amorphized Isotope Multilayers

T. Isoda, M. Uematsu, and K. M. Itoh

Jpn. J. Appl. Pays. 55 036504 2016.02

Research paper (scientific journal), Joint Work, Accepted

29Si Nuclear Spins as a Resource for Donor Spin Qubits in Silicon

G. Wolfowicz, P.-A. Mortemousque, R. Guichard, S. Simmons, M. L. W. Thewalt, K. M. Itoh, and J. J. L. Morton

New J. Phys. 18 023021 2016.02

Research paper (scientific journal), Joint Work, Accepted

Suppression of Segregation of the Phosphorus δ-Doping Layer in Germanium by Incorporation of Carbon

M. Yamada, K. Sawano, M. Uematsu, Y. Shimizu, K. Inoue, Y. Nagai, and K. M. Itoh

Jpn. J. Appl. Phys. 55 031304 2016.02

Research paper (scientific journal), Joint Work, Accepted

Low Symmetry Configurations of Vacancy-Oxygen Complexes in Irradiated Silicon

Y. Kusano, H. Saito, L. S. Vlasenko, M. P. Vlasenko, E. Ohta, and K. M. Itoh

J. Appl. Phys. 118 245703 2015.12

Research paper (scientific journal), Joint Work, Accepted

Electron Spin Coherence of Shallow Donors in Natural and Isotopically Enriched Germanium

A. J. Sigillito, R. M. Jock, A. M. Tyryshkin, J.W. Beeman, E. E. Haller, K. M. Itoh, and S. A. Lyon

Phys. Rev. Lett. 115 247601 2015.12

Research paper (scientific journal), Joint Work, Accepted

Spin-Orbit Coupling and Operation of Multivalley Spin Qubits

M. Veldhorst, R. Ruskov, C. H. Yang, J. C. C. Hwang, F. E. Hudson, M. E. Flatt´e, C. Tahan, K. M. Itoh, A. Morello, and A. S. Dzurak

Phys. Rev. B 92 201401(R) 2015.11

Research paper (scientific journal), Joint Work, Accepted

A Two-Qubit Logic Gate in Silicon

M. Veldhorst, C. H. Yang, J. C. C. Hwang, W. Huang, J. P. Dehollain, J. T. Muhonen, S. Simmons, A. Laucht, F. E. Hudson, K. M. Itoh, A. Morello, and A. S. Dzurak

Nature 526 410 - 414 2015.10

Research paper (scientific journal), Joint Work, Accepted

Suppression of Surface Segregation of the Phosphorous δ-Doping Layer by Insertion of an Ultra-Thin Silicon Layer for Ultra-Shallow Ohmic Contacts on n-Type Germanium

M. Yamada, K. Sawano, M. Uematsu, and K. M. Itoh

Appl. Phys. Lett. 107 132101 2015.09

Research paper (scientific journal), Joint Work, Accepted

Observation of Silicon Self-Diffusion Enhanced by the Strain Originated from End-of-Range Defects Using Isotope Multilayers

T. Isoda, M. Uematsu, and K. M. Itoh

J. Appl. Phys. 118 115706 2015.09

Research paper (scientific journal), Joint Work, Accepted

Interaction of Strain and Nuclear Spins in Silicon: Quadrupolar Effects on Ionized Donors

D. P. Franke, F. M. Hrubesch, M. Künzl, H.-W. Becker, K. M. Itoh, M. Stutzmann, F. Hoehne, L. Dreher, and M. S. Brandt

Phys. Rev. Lett. 115 057601 2015.07

Research paper (scientific journal), Joint Work, Accepted

Interfacial Spin-Glass-Like State in Mn5Ge3 Single Crystalline Films Grown on Germanium Substrates

A. Truong, A. O. Watanabe, P. A. Mortemousque, K. Ando, T. Sato, T. Taniyama, and K. M. Itoh

Phys. Rev. B 91 214425 2015.06

Research paper (scientific journal), Joint Work, Accepted

Reconstruction in Atom Probe Tomography Considering the Cone Angle of Needle-Like Shaped Samples and Evaluation of Reliability

T. Yukawa, M. Motira, M. Karasawa, S. Ishimura, N. Mayama, H. Uchida, Y. Kawamura, K. M. Itoh, and M. Owari

e-J. Surf. Sci. Nanotech. 13 235 - 238 2015.05

Research paper (international conference proceedings), Joint Work, Accepted

Phonon Engineering in Isotopically Disordered Silicon Nanowires

S. Mukherjee, U. Givan, S. Senz, A. Bergeron, S. Francoeur, M. de la Mata, J. Arbiol, T. Sekiguchi, K. M. Itoh, D. Isheim, D. N. Seidman, and O. Moutanabbir

Nano Lett. 15 3885 - 3893 2015.05

Research paper (scientific journal), Joint Work, Accepted

Electrically Controlling Single-Spin Qubits in a Continuous Microwave Field

A. Laucht, J. T. Muhonen, F. A. Mohiyaddin, R. Kalra, J. P. Dehollain, S. Freer, F. E. Hudson, M. Veldhorst, R. Rahman, G. Klimeck, K. M. Itoh, D. N. Jamieson, J. C. McCallum, A. S. Dzurak, A. Morello

Sci. Adv. 1 e1500022 2015.04

Research paper (scientific journal), Joint Work, Accepted

Quantifying the Quantum Gate Fidelity of Single-Atom Spin Qubits in Silicon by Randomized Benchmarking

J. T. Muhonen, A. Laucht, S. Simmons, J. P. Dehollain, R. Kalra, F. E. Hudson, S. Freer, K. M. Itoh, D. N. Jamieson, J. C. McCallum, A. S. Dzurak, and A. Morello

J. Phys.: Condens. Matter 27 154205 2015.03

Research paper (scientific journal), Joint Work, Accepted

Pulsed Low-Field Electrically Detected Magnetic Resonance

L. Dreher, F. Hoehne, H. Morishita, H. Huebl, M. Stutzmann, K. M. Itoh, and M. S. Brandt

Phys. Rev. B 91 075314 2015.02

Research paper (scientific journal), Joint Work, Accepted

Spectroscopy of Surface-Induced Noise Using Shallow Spins in Diamond

Y. Romach, C. Müller, T. Unden, L. J. Rogers, T. Isoda, K. M. Itoh, M. Markham, A. Stacey, J. Meijer, S. Pezzagna, B. Naydenov, L. P. McGuinness, N. Bar-Gill, and F. Jelezko

Phys. Rev. Lett. 114 017601 2015.01

Research paper (scientific journal), Joint Work, Accepted

Inductive Measurement of Optically Hyperpolarized Phosphorous Donor Nuclei in an Isotopically Enriched Silicon-28 Crystal

P. Gumann, O. Patange, C. Ramanathan, H. Haas, O. Moussa, M. L. W. Thewalt, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, K. M. Itoh, and D. G. Cory

Phys. Rev. Lett. 113 267604 2014.12

Research paper (scientific journal), Joint Work, Accepted

Evidence of a Perpendicular Magnetocrystalline Anisotropy in a Mn5Ge3 Epitaxial Thin Film Revealed by Ferromagnetic Resonance

A. Truong, A. O. Watanabe, T. Sekiguchi, P. A. Mortemousque, T. Sato, K. Ando, and K. M. Itoh

Phys. Rev. B 90 224415 2014.12

Research paper (scientific journal), Joint Work, Accepted

An Addressable Quantum Dot Qubit with Fault-Tolerant Control-Fidelity

M. Veldhorst, J. C. C. Hwang, C. H. Yang, A. W. Leenstra, B. de Ronde, J. P. Dehollain, J. T. Muhonen, F. E. Hudson, K. M. Itoh, A. Morello, and A. S. Dzurak

Nature Nanotechnology 9 981 - 985 2014.10

Research paper (scientific journal), Joint Work, Accepted

Storing Quantum Information for 30 Seconds in a Nanoelectronic Device

J. T. Muhonen, J. P. Dehollain, A. Laucht, F. E. Hudson, R. Kalra, T. Sekiguchi, K. M. Itoh, D. N. Jamieson, J. C. McCallum, A. S. Dzurak, and A. Morello

Nature Nanotechnology 9 986 - 991 2014.10

Research paper (scientific journal), Joint Work, Accepted

Host Isotope Mass Effects on the Hyperfine Interaction of Group-V Donors in Silicon

T. Sekiguchi, A. M. Tyryshkin, S. Tojo, E. Abe, R. Mori, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, J. W. Ager, E. E. Haller, M. L. W. Thewalt, J. J. L. Morton, S. A. Lyon, and K. M. Itoh

Phys. Rev. B 90 121203(R) 2014.09

Research paper (scientific journal), Joint Work, Accepted

Spin-Dependent Recombination at Arsenic Donors in Ion-Implanted Silicon

D. P. Franke, M. Otsuka, T. Matsuoka, L. S. Vlasenko, M. P. Vlasenko, M. S. Brandt, and K. M. Itoh

Appl. Phys. Lett. 105 112111 2014.09

Research paper (scientific journal), Joint Work, Accepted

Investigation of Mixing Effects of Silicon Isotopes under Shave-off Condition Using Atom Probe Tomography

M. Karasawa, M. Fujii, M. Morita, S. Ishimura, N. Mayama, H. Uchida, Y. Kawamura, K. M. Itoh, and M. Owari

Surface and Interface Analysis 46 1200 2014.07

Joint Work, Accepted

Simultaneous Observation of the Diffusion of Self-atoms and Co-Implanted Boron and Carbon in Silicon Investigated by Isotope Heterostructures

M. Uematsu, K. Matsubara, and K. M. Itoh

Jpn. J. Appl. Phys. 53 071302 2014.06

Research paper (scientific journal), Joint Work, Accepted

Fast, Low-Power Manipulation of Spin Ensembles in Superconducting Microresonators

A. J. Sigillito, H. Malissa, A. M. Tyryshkin, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, M. L. W. Thewalt , K. M. Itoh, J. J. L. Morton, A. A. Houck, D. I. Schuster, and S. A. Lyon

Appl. Phys. Lett. 104 222407 2014.06

Research paper (scientific journal), Joint Work, Accepted

Investigation of Surface Magnetic Noise by Shallow Spins in Diamond

T. Rosskopf, A. Dussaux, K. Ohashi, M. Loretz, R. Schirhagl, H. Watanabe, S. Shikata, K. M. Itoh, and C. L. Degen

Phys. Rev. Lett. 112 147602 2014.04

Research paper (scientific journal), Joint Work, Accepted

Hyperfine Clock Transitions of Bismuth Donors in Silicon Detected by Spin-Dependent Recombination

P. A. Mortemousque, S. Berger, T. Sekiguchi, C. Culan, R. G. Elliman, and K. M. Itoh

Phys. Rev. B 89 155202 2014.04

Research paper (scientific journal), Joint Work, Accepted

Spin-Dependent Recombination Involving Oxygen-Vacancy Complexes in Silicon

D. P. Franke, F. Hoehne, L. S. Vlasenko, K. M. Itoh, and M. S. Brandt

Phys. Rev. B 94 195207 2014.03

Research paper (scientific journal), Joint Work, Accepted

シリコン中の核スピン量子メモリ

ITOH KOHEI

固体物理 48 ( 573 ) 133-142 2013.11

Research paper (scientific journal), Joint Work

Negatively Charged Nitrogen-Vacancy Centers in a 5 nm Thin 12C Diamond Films

K. Ohashi, T. Rosskopf, H. Watanabe, M. Loretz, Y. Tao, R. Hauert, S. Tomizawa, T. Ishikawa, J. Ishi-Hayase, S. Shikata, C. L. Degen, and K. M. Itoh

Nano Lett. 13 4733-4738 2013.09

Research paper (scientific journal), Joint Work, Accepted

Identification of Photo-Induced Spin-Triplet Recombination Centers Situated at Si Surfaces and Si/SiO2 Interfaces

M. Otsuka, T. Matsuoka, L. S. Vlasenko, M. P. Vlasenko, and K. M. Itoh

Appl. Phys. Lett. 103 2013.09

Research paper (scientific journal), Joint Work, Accepted

High-Sensitivity Magnetometry Based on Quantum Beats in Diamond Nitrogen-Vacancy Centers

K. Fang, V. M. Acosta, C. Santori, Z. Huang, K. M. Itoh, H. Watanabe, S. Shikata, and R. G. Beausoleil

Phys. Rev. Lett. 110 130802 2013.03

Research paper (scientific journal), Joint Work, Accepted

Geometric Phase Gates with Adiabatic Control in Electron Spin Resonance

H. Wu, E. M. Gauger, R. E. George, M. Mottonen, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, K. M. Itoh, M. L. W. Thewalt, and J. J. L. Morton

Phys. Rev. A 87 032326 2013.03

Research paper (scientific journal), Joint Work, Accepted

Optical and Dynamic Nuclear Polarization of 29Si Nuclei via Photoexcited Triplet States of Oxygen-Vacancy Complexes in Isotopically Controlled Silicon

T. Itahashi, H. Hayashi, M. R. Rahman, K. M. Itoh, L. S. Vlasenko, M. P. Vlasenko, and D. S. Poloskin

Phys. Rev. B 87 075201 2013.02

Research paper (scientific journal), Joint Work, Accepted

Atomic-Scale Characterization of Germanium Isotopic Multilayers by Atom Probe Tomography

Y. Shimizu, H. Takamizawa, Y. Kawamura, M. Uematsu, T. Toyama, K. Inoue, E. E. Haller, K. M. Itoh, and Y. Nagai

J. Appl. Phys. 113 026101 2013.01

Research paper (scientific journal), Joint Work, Accepted

Discrete Distribution of Implanted and Annealed Arsenic Atoms in Silicon Nanowires and its Effect on Device Performance

M. Uematsu, K. M Itoh, G. Mil'nikov, H. Minari, and N. Mori

Nanoscale Research Lett. 7 ( 685 ) 2012.12

Research paper (scientific journal), Joint Work, Accepted

Polarization of Photoluminescence from Partial Dislocations in 4H-SiC

R. Hirano, H. Tsuchida, M. Tajima, K. M. Itoh, and K. Maeda

Appl. Phys. Express 6 011301 2012.12

Research paper (scientific journal), Joint Work, Accepted

シリコン安定同位体核スピンと電子スピン間の量子情報コヒーレント転写

ITOH KOHEI

固体物理 47 ( 560 ) 33-39 2012.10

Research paper (scientific journal), Joint Work

Rabi Oscillation and Electron-Spin-Echo Envelope Modulation of the Photoexcited Triplet Spin System in Silicon

W. Akhtar, T. Sekiguchi, T. Itahashi, V. Filidou, J. J. L. Morton, L. Vlasenko, and K. M. Itoh

Phys. Rev. B 86 115206 2012.09

Research paper (scientific journal), Joint Work, Accepted

Photoluminescence Study of Radiation-Enhanced Dislocation Glide in 4H-SiC

R. Hirano, Y. Sato, H. Tsuchida, M. Tajima1, K. M. Itoh, and K. Maeda

Appl. Phys. Express 5 091302 2012.08

Research paper (scientific journal), Joint Work, Accepted

Spin Dependent Recombination Based Magnetic Resonance Spectroscopy of Bismuth Donor Spins in Silicon at Low Magnetic Fields

P. A. Mortemousque, T. Sekiguchi, C. Culan, M. P. Vlasenko, R. G. Elliman, L. S. Vlasenko, and K. M. Itoh

Appl. Phys. Lett. 101 082409 2012.08

Research paper (scientific journal), Joint Work, Accepted

Room-Temperature Observation of Size Effects in Photoluminescence of Si0:8Ge0:2/Si Nanocolumns Prepared by Neutral Beam Etching

R. Hirano, S. Miyamoto, M. Yonemoto, S. Samukawa, K. Sawano, Y. Shiraki, and K. M. Itoh

Appl. Phys. Express 5 082004 2012.07

Research paper (scientific journal), Joint Work, Accepted

Direct-Gap Photoluminescence from Germanium Nanowires

Y. Kawamura, K. C. Y. Huang, S. V. Thombare, S. Hu, M. Gunji, T. Ishikawa, M. L. Brongersma, K. M. Itoh, and P. C. McIntyre

Phys. Rev. B 86 035306 2012.07

Research paper (scientific journal), Joint Work, Accepted

Upper Limit of Two-Dimensional Hole Gas Mobility in Strained Ge/SiGe Heterostructures

T. Tanaka, Y. Hoshi, K. Sawano, N. Usami, Y. Shiraki, and K. M. Itoh

Appl. Phys. Lett. 100 222102 2012.05

Research paper (scientific journal), Joint Work, Accepted

Photoluminescence Study of the Driving Force for Stacking Fault Expansion in 4H-SiC

R. Hirano, Y. Sato, M. Tajima, K. M. Itoh, and K. Maeda

Mater. Sci. Forum 717-720 395-398 2012.05

Research paper (scientific journal), Joint Work, Accepted

Identification of a Paramagnetic Recombination Center in Silicon/Silicon-Dioxide Interface

T. Matsuoka, L. S. Vlasenko, M. P. Vlasenko, T. Sekiguchi, and K. M. Itoh

Appl. Phys. Lett. 100 152107 2012.04

Research paper (scientific journal), Joint Work, Accepted

Experimental and Theoretical Analysis of the Temperature Dependence of the Two-Dimensional Electron Mobility in a Strained Si Quantum Well

T. Tanaka, G. Tsuchiya, Y. Hoshi, K. Sawano, Y. Shiraki, and K. M. Itoh

J. Appl. Phys. 111 073715 2012.04

Research paper (scientific journal), Joint Work, Accepted

Optical and Spin Coherence Properties of Nitrogen-Vacancy Centers Placed in a 100 nm Thick Isotopically Purified Diamond Layer

T. Ishikawa, K.-M. C. Fu, C. Santori, V. M. Acosta, R. G. Beausoleil, H. Watanabe, S. Shikata, and K. M. Itoh

Nano Lett. 12 2083-2087 2012.03

Research paper (scientific journal), Joint Work, Accepted

Coherent Storage of Photoexcited Triplet States Using 29Si Nuclear Spins in Silicon

W. Akhtar, V. Filidou, T. Sekiguchi, E. Kawakami, T. Itahashi, L. Vlasenko, J. J. L. Morton, and K. M. Itoh

Phys. Rev. Lett. 108 097601 2012.02

Research paper (scientific journal), Joint Work, Accepted

Thermal Stability and Surface Passivation of Ge Nanowires Coated by Epitaxial SiGe Shells

S. Hu, Y. Kawamura, K. C. Y. Huang, Y. Li, A. F. Marshall, K. M. Itoh, M. L. Brongersma, and P. C. McIntyre

Nano Lett. 12 1385-1391 2012.02

Research paper (scientific journal), Joint Work, Accepted

Electron Spin Coherence Exceeding Seconds in High Purity Silicon

A. M. Tyryshkin, S. Tojo, J. J. L. Morton, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, T. Schenkel, M. L. W. Thewalt, K. M. Itoh, and S. A. Lyon

Nature Materials 11 143-147 2012.02

Research paper (scientific journal), Joint Work, Accepted

Control of Optical Bandgap Energy and Optical Absorption Coefficient by Geometric Parameters in Sub-10 nm Silicon-Nanodisc Array Structure

M. F. Budiman, W. Hu, M. Igarashi, R. Tsukamoto, T. Isoda, K. M Itoh, I. Yamashita, A. Murayama, Y. Okada, and S. Samukawa

Nanotechnology 23 ( 6 ) 065302 2012.01

Research paper (scientific journal), Joint Work, Accepted

Violation of a Leggett–Garg Inequality with Ideal Non-Invasive Measurements

G. C. Knee, S. Simmons, E. M. Gauger, J. J. L. Morton, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, K. M. Itoh, M. L. W. Thewalt, G. Andrew, D. Briggs, and S. C. Benjamin

Nature Communications 3 ( 606 ) 2012.01

Research paper (scientific journal), Joint Work, Accepted

Investigation of the Factors Determining the SIMS Depth Resolution in Silicon-Isotope Multiple Layers

M. Tomita, M. Koike, H. Akutsu, S. Takeno, Y. Kawamura, Y. Shimizu, M. Uematsu, and K. M. Itoh

J. Vac. Sci. Technol. B 30 ( 1 ) 011803 2011.12

Research paper (scientific journal), Joint Work, Accepted

Optical Properties of Triplet States of Excitons Bound to Interstitial-Carbon Interstitial-Oxygen Defects in Silicon

T. Ishikawa, K. Koga, T. Itahashi, K. M. Itoh, and L. S. Vlasenko

Phys. Rev. B 84 115204 2011.09

Research paper (scientific journal), Joint Work, Accepted

Self-Diffusion in Compressively Strained Ge

Y. Kawamura, M. Uematsu, Y. Hoshi, K. Sawano, M. Myronov, Y. Shiraki, E. E. Haller, and K. M. Itoh

J. Appl. Phys. 110 034906 2011.08

Research paper (scientific journal), Joint Work, Accepted

Damage-Free Top-Down Processes for Fabricating Two-Dimensional Arrays of 7 nm GaAs Nanodiscs Using Bio-Templates and Neutral Beam Etching

X. Y. Wang, C.H. Huang, R. Tsukamoto, P. A. Mortemousque, K. M. Itoh, Y. Ohno, and S. Samukawa

Nanotechnology 22 365301 2011.08

Research paper (scientific journal), Joint Work, Accepted

Correlation of residual impurity concentration and acceptor electron paramagnetic resonance linewidth in isotopically engineered Si

A. R. Stegner, H. Tezuka, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, M. L. W. Thewalt, K. M. Itoh, and M. S. Brandt

Appl. Phys. Lett. 99 032101 2011.07

Research paper (scientific journal), Joint Work, Accepted

Electrical Detection of Cross Relaxation between Electron Spins of Phosphorus and Oxygen-Vacancy Centers in Silicon

W. Akhtar, H. Morishita, K. Sawano, Y. Shiraki, L. S. Vlasenko, and K. M. Itoh

Phys. Rev. B 84 045204 2011.07

Research paper (scientific journal), Joint Work, Accepted

Monte Carlo Simulation of Silicon Atomic Displacement and Amorphization Induced by Ion Implantation

L. J. García, Y. Kawamura, M. Uematsu, J. M. Hernández-Mangas, and K. M. Itoh

J. Appl. Phys. 109 123507 2011.06

Research paper (scientific journal), Joint Work, Accepted

Optically-Detected NMR of Optically-Hyperpolarized 31P Neutral Donors in 28Si

M. Steger, T. Sekiguchi, A. Yang, K. Saeedi, M. E. Hayden, M. L. W. Thewalt, K. M. Itoh, H. Riemann, N. V. Abrosimov, P. Becker, and H.-J. Pohl

J. Appl. Phys. 109 102411 2011.05

Research paper (scientific journal), Joint Work

Depth and Lateral Resolution of Laser-Assisted Atom Probe Microscopy of Silicon Revealed by Isotopic Heterostructures

Y. Shimizu, Y. Kawamura, M. Uematsu, M. Tomita, T. Kinno, N. Okada, M. Kato, H. Uchida, M. Takahashi, H. Ito, H. Ishikawa, Y. Ohji, H. Takamizawa, Y. Nagai, and K. M. Itoh

J. Appl. Phys. 109 036102 2011.02

Research paper (scientific journal), Joint Work, Accepted

Entanglement in a Solid-State Spin Ensemble

S. Simmons, R. M. Brown, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, M. L. W. Thewalt, K. M. Itoh, and J. J. L. Morton

Nature 470 69-72 2011.02

Research paper (scientific journal), Joint Work, Accepted

Linewidth of Low-Field Electrically Detected Magnetic Resonance of Phosphorus in Isotopically Controlled Silicon

H. Morishita, E. Abe, W. Akhtar, L. S. Vlasenko, A. Fujimoto, K. Sawano, Y. Shiraki, L. Dreher, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, M. L. W. Thewalt, M. S. Brandt, and K. M. Itoh

Applied Physics Express 4 021302 2011.01

Research paper (scientific journal), Joint Work, Accepted

Ultraviolet-Laser Atom-Probe Tomographic Three-Dimensional Atom-by-Atom Mapping of Isotopically Modulated Si Nanoscopic Layers

O. Moutanabbir, D. Isheim, D. N. Seidman, Y. Kawamura, and K. M. Itoh

Appl. Phys. Lett. 98 013111 2011.01

Research paper (scientific journal), Joint Work, Accepted

Splitting of Electron Paramagnetic Resonance Lines of Lithium–Oxygen Centers in Isotopically Enriched 28Si Single Crystals

M. R. Rahman, M. P. Valasenko, L. S. Vlasenko, E. E. Haller, and K. M. Itoh

Solid State Commun. 150 2275-2277 2010.12

Research paper (scientific journal), Joint Work, Accepted

Dynamic Nuclear Polarization of 29Si Nuclei Induced by Li and Li–O Centers in Silicon

M. R. Rahman, T. Itahashi, M. P. Vlasenko, L. S. Vlasenko, E. E. Haller, and K. M. Itoh

Jpn. J. Appl. Phys. 49 ( 10 ) 103001 2010.10

Research paper (scientific journal), Joint Work, Accepted

Zeeman Photoluminescence Spectroscopy of Isoelectronic Beryllium Pairs in Silicon

T. Ishikawa, T. Sekiguchi, K. Yoshizawa, K. Naito, M. L. W. Thewalt, amd K. M. Itoh

Solid State Commun. 150 1827-1830 2010.10

Research paper (scientific journal), Joint Work, Accepted

Storage of Multiple Coherent Microwave Excitations in an Electron Spin Ensemble

H. Wu, R. E. George, J. H. Wesenberg, K. Mølmer, D. I. Schuster, R. J. Schoelkopf, K. M. Itoh, A. Ardavan, J. J. L. Morton, and G. A. D. Briggs

Phys. Rev. Lett. 105 14053 2010.10

Research paper (scientific journal), Joint Work, Accepted

Isotope Effect on Electron Paramagnetic Resonance of Boron Acceptors in Siliconm

A. R. Stegner, H. Tezuka, T. Andlauer, M. Stutzmann, M. L. W. Thewalt, M. S. Brandt, and K. M. Itoh

Phys. Rev. B 82 115213 2010.09

Research paper (scientific journal), Joint Work, Accepted

Electron spin coherence of phosphorus donors in silicon: Effect of environmental nuclei

E. Abe, A. M. Tyryshkin, S. Tojo, J. J. L. Morton, W. M. Witzel, A. Fujimoto, J. W. Ager, E. E. Haller, J. Isoya, S. A. Lyon, M. L. W. Thewalt, and K. M. Itoh

Phys. Rev. B 82 121201(R) 2010.09

Research paper (scientific journal), Joint Work, Accepted

Excitonic Aharonov-Bohm Effect in Isotopically Pure 70Ge/Si Self-Assembled Type-II Quantum Dots

S. Miyamoto, O. Moutanabbir, T. Ishikawa, M. Eto, E. E. Haller, K. Sawano, Y. Shiraki, and K. M. Itoh

Phys. Rev. B 82 073306 2010.08

Research paper (scientific journal), Joint Work, Accepted

Resonant Escape over an Oscillating Barrier in a Single-Electron Ratchet Transfer

S. Miyamoto, K. Nishiguchi, Y. Ono, K. M. Itoh, and A. Fujiwara

Phys. Rev. B 82 033303 2010.07

Research paper (scientific journal), Joint Work, Accepted

Critical Displacement of Host-Atoms for Amorphization in Germanium Induced by Arsenic Implantation

Y. Kawamura, Y. Shimizu, H. Oshikawa, M. Uematsu, E. E. Haller, and K. M. Itoh

Appl. Phys. Express 3 071303 2010.07

Research paper (scientific journal), Joint Work, Accepted

Transport of Deposited Atoms throughout Strain-Mediated Self-Assembly

O. Moutanabbir, S. Miyamoto, E. E. Haller, and K. M. Itoh

Phys. Rev. Lett. 105 026101 2010.07

Research paper (scientific journal), Joint Work

Room-Temperature Photoluminescence Observation of Stacking Faults in 3C-SiC

R. Hirano, M. Tajima, and K. M. Itoh

Mater. Sci. Forum 645-648 355-358 2010.04

Research paper (scientific journal), Joint Work, Accepted

Electron Paramagnetic Resonance of Boron Acceptors in Isotopically Purified Silicon

H. Tezuka, A. R. Stegner, A. M. Tyryshkin, S. Shankar, M. L. W. Thewalt, S. A. Lyon, K. M. Itoh, and M. S. Brandt

Phys. Rev. B 81 161203(R) 2010.04

Research paper (scientific journal), Joint Work, Accepted

Spin Susceptibility of Noncentrosymmetric Heavy-Fermion Superconductor CeIrSi3 under Pressure: 29Si Knight-Shift Study on Single Crystal

H. Mukuda, T. Ohara, M. Yashima, Y. Kitaoka, R. Settai, Y. Onuki, K. M. Itoh, and E. E. Haller

Phys. Rev. Lett. 104 017002 2010.01

Research paper (scientific journal), Joint Work, Accepted

Electron Paramagnetic Resonance and Dynamic Nuclear Polarization of 29Si Nuclei in Lithium-Doped Silicon

M. R. Rahman, L. S. Vlasenko, E. E. Haller, and K. M. Itoh

Physica B 404 5060-5062 2009.12

Research paper (scientific journal), Joint Work, Accepted

Quantitative Evaluation of Germanium Displacement Induced by Arsenic Implantation Using Germanium Isotope Superlattices

Y. Kawamura, Y. Shimizu, H. Oshikawa, M. Uematsu, E. E. Haller, and K. M. Itoh

Physica B 404 4546-4548 2009.12

Research paper (scientific journal), Joint Work, Accepted

Photoluminescence from Triplet States of Isoelectronic Bound Excitons at Interstitial Carbon-Intersititial Oxygen Defects in Silicon

T. Ishikawa, K. Koga, T. Itahashi, L. S. Vlasenko, and K. M. Itoh

Physica B 404 4552-4554 2009.12

Research paper (scientific journal), Joint Work, Accepted

Electrically Detected Magnetic Resonance of Phosphorous Due to Spin Dependent Recombination with Triplet Centers in γ-Irradiated Silicon

W. Akhtar, H. Morishita, L. S. Vlasenko, D. S. Poloskin, and K. M. Itoh

Physica B 404 4583-4585 2009.12

Research paper (scientific journal), Joint Work, Accepted

Electrical Detection and Magnetic-Field Control of Spin States in Phosphorus-Doped Silicon

H. Morishita, L. S. Vlasenko, H. Tanaka, K. Semba, K. Sawano, Y. Shiraki, M. Eto, and K. M. Itoh

Phys. Rev. B 80 205206 2009.11

Research paper (scientific journal), Joint Work, Accepted

Single-Frequency Laser Spectroscopy of the Boron Bound Exciton in 28Si

A. Yang, M. Steger, T. Sekiguchi, D. Karaiskaj, M. L. W. Thewalt, M. Cardona, K. M. Itoh, H.R iemann, N. V. Abrosimov, M. F. Churbanov, A. V. Gusev, A. D. Bulanov, I. D. Kovalev, A. K. Kaliteevskii, O. N. Godisov, P. Becker, H.-J. Pohl, J. W. Ager III, and E. E. Haller

Phys. Rev. B 80 195203 2009.11

Research paper (scientific journal), Joint Work, Accepted

Atom Probe Microscopy of Three-Dimensional Distribution of Silicon Isotopes in 28Si/30Si Isotope Superlattices with Sub-Nanometer Spatial Resolution

Y. Shimizu, Y. Kawamura, M. Uematsu, K. M. Itoh, M. Tomita, M. Sasaki, H. Uchida, and M. Takahashi

J. Appl. Phys. 106 076102 2009.10

Research paper (scientific journal), Joint Work, Accepted

Probing the Behaviors of Point Defects in Silicon and Germanium Using Isotope Superlattices

M. Uematsu, M. Naganawa, Y. Shimizu, K. M. Itoh, K. Sawano, Y. Shiraki, and E. E. Haller

ECS Transactions 25 ( 3 ) 51-54 2009.09

Research paper (scientific journal), Joint Work, Accepted

Dynamic Nuclear Polarization of 29Si Nuclei in Isotopically Controlled Phosphorus Doped Silicon

H. Hayashi, T. Itahashi, K. M. Itoh, L. S. Vlasenko

Phys. Rev. B 80 045201 2009.07

Research paper (scientific journal), Joint Work, Accepted

Simultaneous Subsecond Hyperpolarization of the Nuclear and Electron Spins of Phosphorus in Silicon by Optical Pumping of Exciton Transitions

A. Yang, M. Steger, T. Sekiguchi, M. L. W. Thewalt, T. D. Ladd, K. M. Itoh, H. Riemann, N. V. Abrosimov, P. Becker, and H.-J. Pohl

Phys. Rev. Lett 102 257401 2009.06

Research paper (scientific journal), Joint Work, Accepted

Spatial Correlation of Self-Assembled Isotopically Pure Ge/Si(001) Nanoislands

S. Miyamoto, O. Moutanabbir, E. E. Haller, and K. M. Itoh

Phys. Rev. B 79 165415 2009.04

Research paper (scientific journal), Joint Work, Accepted

A Schottky Top-Gated Two-Dimensional Electron System in a Nuclear Spin Free Si/SiGe Heterostructure

J. Sailer, V. Lang, G. Abstreiter, G. Tsuchiya, K. M. Itoh, J. W. Ager III, E. E. Haller, D. Kupidura, D. Harbusch, S. Ludwig, and D. Bougeard

Phys. Status Solidi RRL 3 ( 2 ) 61-63 2009.01

Research paper (scientific journal), Joint Work, Accepted

Multiband Superconductivity in Heavy Fermion Compound CePt3Si without Inversion Symmetry:An NMR Study on a High-Quality Single Crystal

H. Mukuda, S. Nishide, A. Harada, K. Iwasaki, M. Yogi, M. Yashima, Y. Kitaoka, M. Tsujino, T. Takeuchi, R. Settai, Y. Okuni, E. Bauer, K. M. Itoh, and E. E. Haller

J. Phys. Soc. Jpn. 78 ( 1 ) 014705 2009.01

Research paper (scientific journal), Joint Work, Accepted

Behaviors of Neutral and Charged Silicon Self-Interstitials during Transient Enhanced Diffusion in Silicon Investigated by Isotope Superlattices

Y. Shimizu, M. Uematsu, K. M. Itoh, A. Takano, K. Sawano and Y. Shiraki

J. Appl. Phys. 105 013504 2009.01

Research paper (scientific journal), Joint Work, Accepted

Silicon Isotope Superlattices: Ideal SIMS Standards for Shallow Junction Characterization

Y. Shimizu, A. Takano, and K. M. Itoh

Applied Surface Science 255 1345-1347 2008.12

Research paper (scientific journal), Joint Work, Accepted

Film Thickness Determining Method of the Silicon Isotope Superlattices by SIMS

A. Takano, Y. Shimizu, and K. M. Itoh

Applied Surface Science 255 1430-1432 2008.12

Research paper (scientific journal), Joint Work, Accepted

Escape Dynamics of a Few Electrons in a Single-Electron Ratchet using Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor

S. Miyamoto, K. Nishiguchi, Y. Ono, K. M. Itoh, and A. Fujiwara

Appl. Phys. Lett. 93 222103 2008.12

Research paper (scientific journal), Joint Work, Accepted

Charge States of Vacancies in Germanium Investigated by Simultaneous Observation of Germanium Self-Diffusion and Arsenic Diffusion

M. Naganawa, Y. Shimizu, M. Uematsu, K. M. Itoh, K. Sawano, Y. Shiraki, and E. E. Haller

Appl. Phys. Lett. 93 191905 2008.11

Research paper (scientific journal), Joint Work, Accepted

Enhancement of room-temperature 2DHG conductivity in narrow and strained double-sides modulation doped Ge quantum well

M. Myronov, Y. Shiraki, T. Mouri, and K. M. Itoh

Thin Solid Films 517 359-361 2008.11

Research paper (scientific journal), Joint Work, Accepted

Tuning the Luminescence Emission of {105}-Faceted Ge QDs Superlattice Using Proton Implantation and Thermal Annealing

O. Moutanabbir, S. Miyamoto, A. Sagara, H. Oshikawa, and K. M. Itoh

Thin Solid Films 517 391-394 2008.11

Research paper (scientific journal), Joint Work, Accepted

Evolution of an Unconventional Superconducting State inside the Antiferromagnetic Phase of CeNiGe3 under Pressure:A 73Ge-Nuclear-Quadrupole-Resonance Study

A. Harada, H. Mukuda, Y. Kitaoka, A. Thamizhavel, Y. Okuda, R. Settai, Y. Okuni, K. M. Itoh, E. E. Haller, and H. Harima

Phys. Soc. Jpn. 77 ( 10 ) 103710 2008.10

Research paper (scientific journal), Joint Work, Accepted

Nuclear Magnetic Resonance Linewidth and Spin Diffusionin 29Si Isotopically Controlled Silicon

H. Hayashi, K. M. Itoh, and L. S. Vlasenko

Phys. Rev. B 78 153201 2008.10

Research paper (scientific journal), Joint Work, Accepted

Accurate Determination of the Intrinsic Diffusivities of Boron, Phosphorus, and Arsenic in Silicon : The Influence of SiO2 Films

M. Naganawa, Y. Kawamura, Y. Shimizu, M. Uematsu, K. M. Itoh, H. Ito, M. Nakamura, H. Ishikawa, and Y. Ohji

Jpn. J. Appl. Phys. 47 ( 8 ) 6205-6207 2008.08

Research paper (scientific journal), Joint Work, Accepted

Observation of High Mobility 2DHG with Very High Hole Density in the Modulation Doped Strained Ge Quantum Well at Room Temperature

M. Myronov, K. Sawano, Y. Shiraki, T. Mouri, and K. M. Itoh

Physica E 40 1935-1937 2008.04

Research paper (scientific journal), Joint Work, Accepted

Observation of High Mobility 2DHG with Very High Hole Density in the Modulation Doped Strained Ge Quantum Well at Room Temperature

M. Myronov, K. Sawano, Y. Shiraki, T. Mouri, and K. M. Itoh

Physica E 40 1935-1937 2008.04

Research paper (scientific journal), Joint Work

High-Resolution Photoluminescence Measurement of the Isotopic-Mass Dependence of the Lattice Parameter of Silicon

A. Yang, M. Steger, H. J. Lian, M. L. W. Thewalt, M. Uemura, A. Sagara, K. M. Itoh, E. E. Haller, J. W. Ager, III, S. A. Lyon, M. Konuma, and M. Cardona

Phys. Rev. B 77 113203 2008.03

Research paper (scientific journal), Joint Work, Accepted

Quantitative Evaluation of Silicon Displacement Induced by Arsenic Implantation Using Silicon Isotope Superlattices

Y. Shimizu, M. Uematsu, K. M. Itoh, A. Takano, K. Sawano, and Y. Shiraki

Appl. Phys. Express 1 021401 2008.01

Research paper (scientific journal), Joint Work, Accepted

Room-Temperature Transport Properties of High Drift Mobility Two-Dimensional Electron Gas Confined in a Strained Si Quantum Well

M. Myronov, K. Sawano, K. M. Itoh, and Y. Shiraki

Appl. Phys. Express 1 021402 2008.01

Research paper (scientific journal), Joint Work, Accepted

Generation of Excess Si Species at Si/SiO2 Interface and Their Diffusion into SiO2 during Si Thermal Oxidation

K. Ibano, K. M. Itoh, and M. Uematsu

J. Appl. Phys. 103 026101 2008.01

Research paper (scientific journal), Joint Work, Accepted

Arithmetic on a Distributed-Memory Quantum Multicomputer

R. Van Meter, W. J. Munro, K. Nemoto, and K. M. Itoh

ACM Journal on Emerging Technologies in Computing Systems 3 ( 4 ) 17 2008.01

Research paper (scientific journal), Joint Work, Accepted

Intimate Interplay between Superconductivity and Antiferromagnetism in CeNiGe3:A 73Ge-NQR Study under Pressure

A. Harada, H. Mukuda, Y. Kitaoka, A. Thamizhavel, Y. Okuda, R. Settai, Y. Onuki, K. M. Itoh, E. E. Haller, and H. Harima

Physica B 403 1020-1022 2008.01

Research paper (scientific journal), Joint Work

Defect Studies for the Development of Nano-Scale Silicon Diffusion Simulators

M. Uematsu, Y. Shimizu, and K. M. Itoh

Physica B 401-402 511-518 2007.12

Research paper (scientific journal), Joint Work, Accepted

Simultaneous Observation of the Behavior of Impurities and Silicon Atoms in Silicon Isotope Superlattices

Y. Shimizu, A. Takano, M. Uematsu, and K. M. Itoh

Physica B 401-402 597-599 2007.12

Research paper (scientific journal), Joint Work, Accepted

Pressure-Induced Antiferromagnetic Superconductivity in CeNiGe3: A 73Ge-NQR Study under Pressure

A. Harada, S. Kawasaki, H. Mukuda, Y. Kitaoka, A. Thamizhavel, Y. Okuda, R. Settai, Y. Onuki, K. M. Itoh, E. E. Haller, and H. Harima

Journal of Magnetism and Magnetic Materials 310 614-616 2007.11

Research paper (scientific journal), Joint Work, Accepted

73Ge-NQR Study of Heavy-Fermion Compound CeNi2Ge2

S. Kawasaki, T. Sada, T. Miyoshi, H. Kotegawa, H. Mukuda, Y. Kitaoka, T. C. Kobayashi, T. Fukuhara, K. Maezawa, K. M. Itoh, and E. E. Haller

Journal of Magnetism and Magnetic Materials 310 590-592 2007.11

Research paper (scientific journal), Joint Work, Accepted

Observation of two-dimensional hole gas with mobility and carrier density exceeding those of two-dimensional electron gas at room temperature in the SiGe heterostructures

M. Myronov, K. Sawano, Y. Shiraki, T. Mouri, and K. M. Itoh

Appl. Phys. Lett. 91 082108 2007.08

Research paper (scientific journal), Joint Work, Accepted

Optimized Ge Nanowire Arrays on Si by Modified Surfactant Mediated Epitaxy

K. Romanyuk, J. Myslivecek, V. Cherepanov, T. Sekiguchi, S. Yoshida, K. M. Itoh, and B. Voigtländer

Phys. Rev. B 75 241309(R) 2007.06

Research paper (scientific journal), Joint Work, Accepted

Enhancement of Room Temperature Holes Conductivity in Narrow and Strained Ge Quantum Well by Double-Side Modulation Doping

M. Myronov, Y. Shiraki, T. Mouri and K. M. Itoh

Appl. Phys. Lett. 90 ( 19 ) 192108 2007.05

Research paper (scientific journal), Joint Work, Accepted

Direct Observation of the Donor Nuclear Spin in a Near-Gap Bound Exciton Transition: 31P in Highly Enriched 28Si

M. L. W. Thewalt, A. Yang, M. Steger, D. Karaiskaj, M. Cardona, H. Riemann, N. V. Abrosimov, A. V. Gusev, A. D. Bulanov, I. D. Kovalev, A. K. Kaliteevskii, O. N. Godisov, P. Becker, H. J. Pohl, E. E. Haller, J. W. Ager III, and K. M. Itoh

J. Appl. Phys. 101 081724 2007.04

Research paper (scientific journal), Joint Work, Accepted

Self-assembly of Periodic Nanoclusters of Si and Ge along Single Steps of a Vicinal Si(111)

T. Sekiguchi, S. Yoshida, Y. Shiren, K. M. Itoh, J. Myslivecek, and B. Voigtländer

J. Appl. Phys. 101 081702 2007.04

Research paper (scientific journal), Joint Work, Accepted

Experimental Evidence for Ferromagnetic Spin-Pairing Superconductivity Emerging in UGe2: A 73Ge-Nuclear-Quadrupole-Resonance Study under Pressure

A. Harada, S. Kawasaki, H. Mukuda, Y. Kitaoka, Y. Haga, E. Yamamoto, Y. Onuki, K. M. Itoh, E. E. Haller, and H. Harima

Phys. Rev. B 75 140502(R) 2007.04

Research paper (scientific journal), Joint Work, Accepted

Experimental Evidence of the Vacancy Mediated Silicon Self-Diffusion in Single Crystalline Silicon

Y. Shimizu, M. Uematsu, and K. M. Itoh

Phys. Rev. Lett. 98 095901 2007.03

Research paper (scientific journal), Joint Work, Accepted

Dynamic Nuclear Polarization of 29Si Nuclei in the Isotope Enriched N-type Silicon

H. Hayashi, W. Ko, T. Itahashi, A. Sagara, K. M. Itoh, L. S. Vlasenko, and M. P. Vlasenko

Phys. Status Solidi C 3 ( 12 ) 4388-4391 2007.01

Research paper (scientific journal), Joint Work, Accepted

Electron Paramagnetic Resonance and Dynamic Nuclear Polarization via the Pphotoexcited Triplet Sstates of Radiation Defects in Natural and 29Si Isotope Enriched Silicon

L. S. Vlasenko, M. P. Vlasenko, D. S. Poloskin, R. Laiho, H. Hayashi, T. Itahashi, A. Sagara, and K. M. Itoh

Phys. Status Solidi C 3 ( 12 ) 4376-4379 2007.01

Research paper (scientific journal), Joint Work, Accepted

One-Dimensional Ordering of Ge Nanoclusters along Atomically Straight Steps of Si(111)

T. Sekiguchi, S. Yoshida, K. M. Itoh, J. Myslivecek and B. Voigtländer

Appl. Phys. Lett. 90 013108 2007.01

Research paper (scientific journal), Joint Work, Accepted

Isotopically Controlled Self-Assembled Ge/Si Nanostructures

O. Moutanabbir, S. Miyamoto, A. Fujimoto, and K. M. Itoh

Journal of Crystal Growth 301-302 324-329 2007.01

Research paper (scientific journal), Joint Work, Accepted

Optical Detection and Ionization of Donors in Specific Electronic and Nuclear Spin States

A. Yang, M. Steger, D. Karaiskaj, M. L. W. Thewalt, M. Cardona, K. M. Itoh, H. Riemann, N. V. Abrosimov, M. F. Churbanov, A. V. Gusev, A. D. Bulanov, A. K. Kaliteevskii, O. N. Godisov, P. Becker, H.-J. Pohl, J. W. Ager III, and E. E. Haller

Phys. Rev. Lett. 97 227401 2006.12

Research paper (scientific journal), Joint Work, Accepted

Time-of-Flight Secondary Mass Spectrometry Analysis of Isotope Composition for Measurement of Self-Diffusion Coefficient

F. Onishi, Y. Inatomi, T. Tanaka, N. Shinozaki, M. Watanabe, A. Fujimoto, and K. Itoh

Jpn. J. Appl. Phys. 45 ( 6A ) 5274-5276 2006.06

Research paper (scientific journal), Joint Work, Accepted

Isotope Dependence of the Lifetime of the 1136 cm-1 Vibration of Oxygen in Silicon

K. K. Kohil, G. Davies, N. Q. Vinh, D. West, S. K. Estreicher, T. Gregorkiewicz, I. Izeddin, and K. M. Itoh

Phys. Rev. Lett. 96 225503 2006.06

Research paper (scientific journal), Joint Work, Accepted

Observation of Si Emission during Thermal Oxidation of Si(001) with High-Resolution RBS

S. Hosoi, K. Nakajima, M. Suzuki, K. Kimura, Y. Shimizu, S. Fukatsu, K. M. Itoh, M. Uematsu, H. Kageshima, and K. Shiraishi

Nuclear Instruments and Methods in Physics Research B 249 390-393 2006.06

Research paper (scientific journal), Joint Work, Accepted

Si Atom Wire Growth for Quantum Information Processing

T. Sekiguchi, S. Yoshida, and K. M. Itoh

Thin Solid Films 508 231-234 2006.06

Research paper (scientific journal), Joint Work, Accepted

Growth and Characterization of Short-period Silicon Isotope Superlattices

Y. Shimizu and K. M. Itoh

Thin Solid Films 508 160-162 2006.06

Research paper (scientific journal), Joint Work, Accepted

Enhanced Si and B Diffusion in Semiconductor-grade SiO2 and the Effect of Strain on Diffusion

M. Uematsu, H. Kageshima, S. Fukatsu, K. M. Itoh, K. Shiraishi, M. Otani, and A. Oshiyama

Thin Solid Films 508 270-275 2006.06

Research paper (scientific journal), Joint Work, Accepted

Unconventional Superconductivity in the Itinerant Ferromagnet UGe2:73Ge-NQR Study under Pressure

A. Harada, S. Kawasaki, H. Mukuda, Y. Kitaoka, Y. Haga, E. Yamamoto, Y. Onuki, K. M. Itoh, E. E. Haller, and H. Harima

Physica B 378-380 963-964 2006.05

Research paper (scientific journal), Joint Work, Accepted

Evidence for Unconventional Superconducting Fluctuations in Heavy-Fermion Compound CeNi2Ge2

S. Kawasaki, T. Sada, T. Miyoshi, H. Kotegawa, H. Mukuda, Y. Kitaoka, T. C. Kobayashi, T. Fukuhara, K. Maezawa, K. M. Itoh, and E. E. Haller

J. Phys. Soc. Jpn. 75 ( 4 ) 043702 2006.04

Research paper (scientific journal), Joint Work, Accepted

Host Isotope Effect on the Localized Vibrational Modes of Oxygen Dimers in Isotopically Enriched Silicon

D. Tsurumi, #HK. M. Itoh#H, and H. Yamada-Kaneta

Pysica B 376-377 959-962 2006.04

Research paper (scientific journal), Joint Work, Accepted

Isotopic Mass Dependence of the Lattice Parameter in Silicon Determined by Measurement of Strain-induced Splitting of Impurity Bound Exciton Transitions

A. Yang, H. J. Lian, and M. L. W. Thewalt, M. Uemura, A. Sagara, K. M. Itoh, E. E. Haller, and S. A. Lyon

Physica B 376-377 54-56 2006.04

Research paper (scientific journal), Joint Work

Pulsed EPR Study of Spin Coherence Time of P Donors in Isotopically Controlled Si

E. Abe, J. Isoya, and K. M. Itoh

Physica B 376-377 28-31 2006.04

Research paper (scientific journal), Joint Work, Accepted

Host Isotope Effect on the Local Vibration Modes of VH2 and VOH2 Defects in Isotopically Enriched 28Si, 29Si and 30Si Single Crystals

T. Ohya, K. M. Itoh, R. N. Pereira, and B. B. Nielsen

Jpn. J. Appl. Phys. 44 ( 10 ) 7309-7313 2005.10

Research paper (scientific journal), Joint Work, Accepted

Cooperative Phenomenon of Ferromagnetism and UnconventionalSuperconductivity in UGe2: A 73Ge-NQR Study under Pressure

A. Harada, S. Kawasaki, H. Kotegawa, Y. Kitaoka, Y. Haga, E. Yamamoto,Y. Onuki, K. M. Itoh, E. E. Haller, and H. Harima

J. Phys. Soc. Japan 74 ( 10 ) 2675-2678 2005.10

Research paper (scientific journal), Joint Work

Anharmonicity and Lattice Coupling of Bond-Centered Hydrogen and Interstitial Oxygen Defects in Monoisotopic Silicon Crystals

R. N. Pereira, B. B. Nielsen, J. Coutinho, V. J. B. Torres, R. Jones, T. Ohya, K. M. Itoh, and P. R. Briddon

Phys. Rev. B 72 115212 2005.09

Research paper (scientific journal), Joint Work, Accepted

Self-assembly of Parallel Atomic Wires and Periodic Clusters of Silicon on a Vicinal Si(111) Surface

T. Sekiguchi, S. Yoshida, and K. M. Itoh

Phys. Rev. Lett. 95 106101 2005.09

Research paper (scientific journal), Joint Work, Accepted

Atomically Straight Steps on Vicinal Si(111) Surfaces Prepared by Step-parallel Current in the Kink-up Direction

S. Yoshida, T. Sekiguchi, and K. M. Itoh

Appl. Phys. Lett. 87 031903 2005.07

Research paper (scientific journal), Joint Work, Accepted

Optical Pumping of 29Si Nuclear Spins in Bulk Silicon at High Magnetic Field and Liquid Helium Temperature

A. S. Verhulst, I. G. Rau, Y. Yamamoto, and K. M. Itoh

Phys. Rev. B 71 235206 2005.06

Research paper (scientific journal), Joint Work, Accepted

Lattice Isotope Effects on the Widths of Optical Transitions in Silicon

G. Davies, S. Hayama, S. Hao, J. Coutinho,S. K. Estreicher, M. Sanati, and K. M. Itoh

J. Phys.: Condens. Matter 17 S2211-2217 2005.05

Research paper (scientific journal), Joint Work, Accepted

Fast quantum modular exponentiation

R. Van Meter, and K. M. Itoh

Phys. Rev. A 71 052320 2005.05

Research paper (scientific journal), Joint Work, Accepted

Magnetic Mesa Structures Fabricated by Reactive Ion Etching with CO/NH3/Xe Plasma Chemistry for an All-Silicon Quantum Computer

D. F. Wang, A. Takahashi, Y. Matsumoto, K. M. Itoh, Y. Yamamoto, T. Ono, and M. Esashi

Nanotechnology 16 990-994 2005.05

Research paper (scientific journal), Joint Work, Accepted

Evidence for the Microscopic Coexistence　of Superconductivity and Ferromagnetism in UGe2:73Ge-NMR/NQR Study

A. Harada, H. Kotegawa, S. Kawasaki, Y. Kawasaki, G.-q.Zheng, Y. Kitaoka, E. Yamamoto, Y. Haga, Y. Onuki, K. Itoh, E. E. Haller

Physica B 359-361 1057-1059 2005.04

Research paper (scientific journal), Joint Work, Accepted

Electron Spin Coherence of Phosphorus Donors in Isotopically Purified 29Si

E. Abe, J. Isoya, and K. M. Itoh

Journal of Superconductivity 18 ( 2 ) 157 2005.04

Research paper (scientific journal), Joint Work, Accepted

Host isotope effects on midinfrared optical transitions in silicon

G. Davies, S. Hayama, S. Hao, B. Bech Nielsen, J. Coutinho, M. Sanati, S. K. Estreicher, and K. M. Itoh

Phys. Rev. B 71 115212 2005.03

Research paper (scientific journal), Joint Work, Accepted

Novel Phase Diagram of Superconductivity and Ferromagnetism in UGe2: a 73Ge-NQR Study under High Pressure

Y. Kitaoka, H. Kotegawa, A. Harada, S. Kawasaki, Y. Kawasaki, Y. Haga, E. Yamamoto, Y. Onuki, K. M. Itoh, E. E. Haller, and H. Harima

J. Phys.: Condens. Matter 17 S975-S986 2005.03

Research paper (scientific journal), Joint Work, Accepted

Evidence for Uniform Coexistence of Ferromagnetism and Unconventional Superconductivity in UGe2: A 73Ge-NQR Study under Pressure

H. Kotegawa, A. Harada, S. Kawasaki, Y. Kawasaki, Y. Kitaoka, Y. Haga, E. Yamamoto, Y. Onuki, K. M. Itoh, E. E. Haller and H. Harima

J. Phys. Soc. Jpn 74 ( 2 ) 705-711 2005.02

Research paper (scientific journal), Joint Work, Accepted

Coherence Time of Decoupled Nuclear Spins in Silicon

T. D. Ladd, D. Maryenko, Y. Yamamoto, E. Abe, and K. M. Itoh

Phys. Rev. B 71 014401 2005.01

Research paper (scientific journal), Joint Work, Accepted

An All-Silicon Linear Chain NMR Quantum Computer

ITOH KOHEI

Solid State Commun. 133 747-752 2005.01

Research paper (scientific journal), Single Work, Accepted

凝縮系の物理量子ビットから固体量子コンピューターへの道のり

ITOH KOHEI

パリティ 20 ( 1 ) 21-23 2005.01

Single Work

SiO2中の拡散に与えるSi/SiO2界面の影響

ITOH KOHEI

表面科学 26 ( 5 ) 249-254 2005

Research paper (scientific journal), Joint Work

スピンを使った量子計算

ITOH KOHEI

日本学術振興会学術月報 58 ( 4 ) 291-295 2005

Research paper (scientific journal), Single Work

静磁場を利用した73Ge融液の自己拡散係数の測定

ITOH KOHEI

Thermophys Prop 25 189-191 2004.12

Research paper (scientific journal), Joint Work

Simulation of Correlated Diffusion of Si and B in Thermally Grown SiO2

M. Uematsu, H. Kageshima, Y. Takahashi, S. Fukatsu, K. M. Itoh, and K. Shiraishi

J. Appl. Phys. 96 ( 10 ) 5513-5519 2004.11

Research paper (scientific journal), Joint Work, Accepted

The Effect of the Si/SiO2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO2

S. Fukatsu, K. M. Itoh, M. Uematsu, H. Kageshima, Y. Takahashi, and K. Shiraishi

Jpn. J. Appl. Phys. 43 ( 11B ) 7837-7842 2004.11

Research paper (scientific journal), Joint Work, Accepted

Photoluminescence studies of implantation damage centers in 30Si

S. Hayama, G. Davies, and K. M. Itoh

J. Appl. Phys 96 ( 3 ) 1754 2004.08

Research paper (scientific journal), Joint Work, Accepted

Electron-spin phase relaxation of phosphorus donors in nuclear-spin-enriched silicon

E. Abe, K. M. Itoh, J. Isoya, and S. Yamasak

Phys. Rev. B 70 033204 2004.07

Research paper (scientific journal), Joint Work, Accepted

Lattice Isotope Effects on Optical Transitions in Silicon

S. Hayama, G. Davies, J. Tan, J. Coutinho, R. Jones, and K. M. Itoh

Phys. Rev. B 70 035202 2004.07

Research paper (scientific journal), Joint Work, Accepted

Correlated Diffusion of Silicon and Boron in Thermally Grown SiO2

M. Uematsu, H. Kageshima, Y. Takahashi, S. Fukatsu, #HK. M. Itoh#H, and K. Shiraishi

Appl. Phys. Lett. 85 ( 2 ) 221-223 2004.07

Research paper (scientific journal), Joint Work, Accepted

Site Selective Growth of Ge Quantum Dots on AFM Patterned Si Substrates

A. Hirai, and K. M. Itoh

Physica E 23 248 2004.07

Research paper (scientific journal), Joint Work, Accepted

Modeling of Si self-diffusion in SiO2 :Effect of the Si/SiO2 interface including time-dependent diffusivity

M. Uematsu, A. Fujiwara, H. Kageshima, Y. Takahashi, S. Fukatsu, K. M. Itoh, K. Shiraishi, and U. Gosele

Appl. Phys. Lett. 84 ( 6 ) 876-878 2004.02

Research paper (scientific journal), Joint Work, Accepted

Complete Scaling Analysis of the Metal-Insulator Transition in Ge:Ga: Effects of Doping-Compensation and Magnetic Field

K. M. Itoh, M. Watanabe, Y. Ootuka, E. E. Haller, and T. Ohtsuki

J. Phys. Soc. Jpn. 73 ( 1 ) 173-183 2004.01

Research paper (scientific journal), Joint Work, Accepted

28Sin/30Sin同位体超格子の成長と評価

ITOH KOHEI

日本結晶成長学会誌 31 ( 1 ) 38-42 2004

Research paper (scientific journal), Single Work

量子演算につながるコヒーレンス

ITOH KOHEI

応用物理 73 ( 6 ) 782-786 2004

Research paper (scientific journal), Single Work

The Effect of Partial Pressure of Oxygen on Self-Diffusion on Si in SiO2

S. Fukatsu, T. Takahashi, K. M. Itoh, M. Uematsu, A. Fujiwara, H. Kageshima, Y. Takahashi, and K. Shiraishi

Jpn. J. Appl. Phy. 42 1492-1494 2003.12

Research paper (scientific journal), Joint Work, Accepted

Local Vibrational Modes of Bond-centerd H in 28Si, 29Si, and 30Si crystals

R. N. Pereira, T. Ohya, #HK. M. Itoh#H, and B. Bech Nielsen

Physica B 340-342 697-700 2003.12

Research paper (scientific journal), Joint Work, Accepted

Hyperfine Interactions at Dangling Bonds in Amorphous Germanium

T. Graf, T. Ishikawa, K. M. Itoh, E. E. Haller, M. Stutzmann, and M. S. Brandt

Phys. Rev. B 68 205208 2003.11

Research paper (scientific journal), Joint Work, Accepted

Effect of the Si/SiO2 Interface on Self-diffusion of Si in Semiconductor-grade SiO2

S. Fukatsu, T. Takahashi, K. M. Itoh, M. Uematsu, A. Fujiwara, H. Kageshima, Y. Takahashi, and K. Shiraishi

Appl. Phy. Lett. 83 ( 19 ) 3897-3899 2003.11

Research paper (scientific journal), Joint Work, Accepted

Isotope Effect on the Phonon-Drag Component of the Thermoelectric Power of Germanium

A. V. Inyushkin, A. N. Taldenkov, V. I. Ozhogin, K. M. Itoh, and E. E. Haller

Phys. Rev. B 68 153203 2003.10

Research paper (scientific journal), Joint Work, Accepted

Mechanism of superconductivity in the polyhedral-network compound Ba8Si46

K. Tanigaki, T. Shimizu, K. M. Itoh, J. Teraoka, Y. Moritomo, and S. Yamanaka

Nature Materials 2 653-655 2003.10

Research paper (scientific journal), Joint Work, Accepted

High Purity Isotopically Enriched 29Si and 30Si Single Crystals: Isotope Separation, Purification, and Growth

K. M. Itoh, J. Kato, F. Uemura, A.K. Kaliteyevskii, O.N.Godisov, G. G. Devyatych, A.D. Bulanov, A. V. Gusev, I.D. Kovalev, P. G. Sennikov, H.-J. Pohl, N.V. Abrosimov, and H. Riemann

Jpn. J. Appl. Phys. Pt. 1 42 ( 10 ) 6248-6251 2003.10

Research paper (scientific journal), Joint Work, Accepted

Growth and Characterization of 28Sin/30Sin Isotope Superlattices

T. Kojima, R. Nebashi, K. M. Itoh, and Y. Shiraki

Appl. Phys. Lett. 83 ( 12 ) 2318-2320 2003.09

Research paper (scientific journal), Joint Work, Accepted

Double and Single Peaks in Nuclear Magnetic Resonance Spectra of Natural and 29Si Enriched Single Crystal Silicon

A. S. Verhulst, D. Maryenko, Y. Yamamoto, and K. M. Itoh

Phys. Rev. B 68 054105 (1-6) 2003.08

Research paper (scientific journal), Joint Work, Accepted

Host Isotope Effect on the Localized Vibrational Modes of Oxygen in Isotopically Enriched 28Si, 29Si and 30Si Single Crystals

J. Kato, K. M. Itoh, H. Yamda-Kaneta, H.-J. Pohl

Phys. Rev. B 68 035205 2003.07

Research paper (scientific journal), Joint Work, Accepted

Unconventional superconductivity in ferromagneticUGe2: a73 Ge nuclear magnetic resonance / nuclear quadrupole resonance study

H. Kotegawa, S. Kawasaki, A. Harada, Y. Kawasaki, K. Okamoto, G-q. Zheng, Y. Kitaoka, E. Yamamoto, Y. Haga, Y.Onuki, K. M. Itoh, and E. E Haller

J. Phys.: Condens. Matter 15 S2043-2046 2003.07

Research paper (scientific journal), Joint Work, Accepted

Normal Processes of Phonon-Phonon Scattering and the Drag Thermopower in Germanium Crystals with Isotopic Disorder

I. G. Kuleev, I. I. Kuleev, A. N. Taldenkov, A. V. Inyushkin, V. I. Ozhogin, K. M. Itoh, and E. E. Haller

Journal of Experimental and Theoretical Physics 96 ( 6 ) 1078-1088 2003.06

Research paper (scientific journal), Joint Work, Accepted

Self-Diffusion of Si in Thermally Grown SiO2 under Equilibrium Conditions

T. Takahashi, S. Fukatsu, K. M. Itoh, M,Uematsu,A. Fujiwara, H. Kageshima, Y. Takahashi, and K, Shiraishi

J. Appl. Phys. 93 ( 6 ) 3674-3676 2003.03

Research paper (scientific journal), Joint Work, Accepted

Solid-State Silicon NMR Quantum Computer

E. Abe, K. M. Itoh, T. D. Ladd, J. R. Goldman, F. Yamaguchi, and Y. Yamamoto

J. Superconductivity 16 ( 1 ) 175-178 2003.02

Research paper (scientific journal), Joint Work, Accepted

Comparison of the Effects of the Doping-Compensation and Magnetic-Field on the Metal-Insulator Transition of Ge:Ga

K. M. Itoh, M. Watanabe, Y. Ootuka, and E. E. Haller

J. Phys. Soc. Jpn. Suppl. 72 181-182 2003.01

Research paper (scientific journal), Joint Work, Accepted

Far-Infrared Spectroscopy of Coulomb Gap in Compensated Semiconductors

J. Kato and K. M. Itoh

J. Phys. Soc. Jpn. Suppl. 72 215-216 2003.01

Research paper (scientific journal), Joint Work, Accepted

未来の高速計算機、量子コンピューターをシリコンで実現へ

ITOH KOHEI

日経先端技術 41 18-21 2003

Research paper (scientific journal), Single Work

シリコン量子コンピュータ

ITOH KOHEI

固体物理 38 ( 4 ) 269-278 2003

Research paper (scientific journal), Single Work

シリコン結晶中の核スピン量子コヒーレンス

ITOH KOHEI

固体物理 38 ( 11 ) 801-815 2003

Research paper (scientific journal), Joint Work

A Raman Scattering Study of Self-Assembled Pure Isotope Ge/Si(100) Quantum Dots

A. V. Kolobov, K. Morita, K. M. Itoh, and E. E. Haller

Appl. Phys. Lett. 81 ( 20 ) 3855-3857 2002.11

Research paper (scientific journal), Joint Work, Accepted

An All Silicon Quantum Computer

T.D. Ladd, J. R. Goldman, F. Yamaguchi, Y. Yamamoto, E.Abe, and K. M. Itoh

Phys. Rev. Lett. 89 ( 1 ) 017901-1 2002.07

Research paper (scientific journal), Joint Work, Accepted

Optical and Electrical Characterization of Free Standing 3C-SiC Films Grown on Undulant 6-inch Si Substrates

T. Yamada and K. M. Itoh

Materials Science Forum 389-393 675-678 2002.06

Research paper (scientific journal), Joint Work, Accepted

Observation of the Random-Correlated Transition of Ionized Impurity Distribution in Compensate Semiconductors

J. Kato, K. M. Itoh, and E. E. Haller

Phys. Rev. B 65 241201(R)1-4 2002.05

Research paper (scientific journal), Joint Work, Accepted

Raman Spectra of 70Ge/76Ge Argon 488nm and 514.5nm Excitations

K. Morita, K. M. Itoh, M. Nakajima, H. Harima, K. Mizoguchi, Y. Shiraki, and E. E. Haller

Physica B 316-317 561-564 2002.05

Research paper (scientific journal), Joint Work, Accepted

半導体中の電子はどのように遍歴化するか？：モット・アンダーソン転移の臨界指数

伊藤公平、渡部道生、大塚洋一

日本物理学会誌 57 ( 11 ) 813-821 2002

Joint Work

Correlated to Random Transition of Ionized Impurity Distribution in N-Type Ge:(As;As)

J. Kato, K. M. Itoh, and E. E. Haller

Physica B 308-310 521-524 2001.12

Research paper (scientific journal), Joint Work, Accepted

Raman Investigation of the Localized Vibrational Mode of Carbon in Strain-Relaxed Si1-xGex:C

K. Morita, K. M. Itoh, L. Hoffmann, B. Bech Nielsen, H. Harima, and K. Mizoguchi

Jpn. J. Appl. Phys. 40 ( 10 ) 5905-5906 2001.10

Research paper (scientific journal), Joint Work, Accepted

Donor and Acceptor Concentration Dependence of the Electron Mobility and the Hall Scattering Factor in N-Type 4H- and 6H-SiC

H. Iwata and K. M. Itoh

J. Appl. Phys. 89 ( 11 ) 6228-6234 2001.06

Research paper (scientific journal), Joint Work, Accepted

Observation of the Random-Correlated Transition of IonizedImpurity Distribution in Compensate Semiconductors

J. Kato, K. M. Itoh, and E. E. Haller

Phys. Rev. B 65 241201(R)1-4 2001.05

Research paper (scientific journal), Joint Work, Accepted

Isotopically Engineered Semiconductors - New Media for the Investigation of Nuclear Spin Related Effects in Solids

K. M. Itoh and E. E. Haller

Physica E 10 463-466 2001.05

Research paper (scientific journal), Joint Work, Accepted

Coherent Confined LO Phonons in 70 Ge/ 74 Ge Isotope Superlattice

M. Nakajima, H. Harima, K. Morita, K. M. Itoh, K. Mizoguchi,E. E. Haller

Phys. Rev. B 63 161304(R) 2001.04

Research paper (scientific journal), Joint Work, Accepted

Electric Field Broadening of Arsenic Donor States in Strongly Compensated N-Type Ge:(As, Ga)

J. Kato, K. M. Itoh, and E. E. Haller

Physica B 302-303 1-6 2001.01

Research paper (scientific journal), Joint Work, Accepted

「金属・非金属転移」

伊藤公平

日本学術振興会学術月報 54 ( 10 ) 977-983 2001

Research paper (scientific journal), Single Work

「シリコン同位体単結晶の応用」

伊藤公平，田久賢一郎

応用物理 70 ( 10 ) 1187-1190 2001

Research paper (scientific journal), Joint Work

Theory of the Anisotropy of the Electron Mobility in N-Type 4H- and 6H-SiC

H. Iwata, K. M. Itoh, G. Pensl

J. Appl. Phys. 88 ( 4 ) 1956-1961 2000.08

Research paper (scientific journal), Joint Work, Accepted

次世代コンピュータのためのシリコン単結晶

伊藤公平

パリティ　 Vol. 15 ( 2000年8月号 ) 34〜35. 2000.08

Research paper (scientific journal), Single Work

Localization Length and Impurity Dielectric Susceptibility in the Critical Regime of the Metal-Insulator Transition in Metal-Insulator Transition In Homogeneously Doped P-Type Ge

M. Watanabe, K. M. Itoh, Y. Ootuka, E. E. Haller

Phys. Rev. B 62 ( 4 ) R2255-R2258 2000.07

Research paper (scientific journal), Joint Work, Accepted

Growth and Characterization of 70Gen/74Gen Isotope Superlattices

K. Morita, K. M. Itoh, J. Muto, K. Mizoguchi, N.Usami, Y. Shiraki, and E. E. Haller

Thin Solid Films 369 405-408 2000.07

Research paper (scientific journal), Joint Work, Accepted

Metal-Insulator Transition of NTD 70Ge:Ge in Magnetic Field

M. Watanabe, K. M. Itoh, Y. Ootuka, and E. E. Haller

Physica B 284-288 1677-1678 2000.07

Research paper (scientific journal), Joint Work

Theoretical Calculation of the Electron Hall Mobility in n-typ 4H- and 6H-SiC,” in Proc. of ‘The Intnl. Conf. on Silicon Carbide and Related Materials

H. Iwata and K. M. Itoh

Materials Science Forum 338-342 729-732 2000.06

Research paper (scientific journal), Joint Work, Accepted

Comparison of Coherent and Incoherent LO Phonons In Isotopic 70Ge/74Ge Superlattices

M. Nakajima, K. Mizoguchi, K. Morita, K. M. Itoh, H. Harima, and S. Nakashima

J. Lumin. 87-89 942-944 2000.05

Research paper (scientific journal), Joint Work, Accepted

Variable Range HoppingConduction in Neutron-Transmutation-Doped 70Ge:Ga

ITOH KOHEI

Phys. Stat.Sol. (b) 218 211-216 2000.03

Research paper (scientific journal), Single Work, Accepted

Metal-Insulator Transition in Doped Semiconductors

K. M. Itoh

Proceedings of the 25th International Conference on Physics of Semiconductors (Springer Proceedings in Physics Vol. 87, Berlin, 2001) 128-131 2000

Research paper (international conference proceedings), Single Work, Accepted

First- and Second-Order Raman Spectroscopy of 70Gen/76Gen Isotope Superlattices

K. Morita, K. M. Itoh, M. Nakajima, H. Harima, K. Mizoguchi,Y. Shiraki, and E. E. Haller

Proceedings of the 25th International Conference on Physics of Semiconductors, (Springer Proceedings in Physics Vol. 87, Berlin, 2001) 877-878 2000

Research paper (international conference proceedings), Joint Work, Accepted

Critical Exponents for the Metal-Insulator Transition of 70Ge:Ga in Magnetic Field

M. Watanabe, K. M. Itoh, M. Morishita, Y. Ootuka, and E. E. Haller

Proceedings of the 25th International Conference on Physics of Semiconductors (Springer Proceedings in Physics Vol. 87, Berlin, 2001) 152-153 2000

Research paper (international conference proceedings), Joint Work, Accepted

Growth and Characterization of the Isotopically Enriched 28Si Bulk Single Crystal

K. Takyu, K. M. Itoh, K. Oka, N. Saito, and V. I. Ozhogin

Jpn. J. Appl. Phys. 38 L1493-L1495 1999.12

Research paper (scientific journal), Joint Work, Accepted

Metal-Insulator Transition of Isotopically Enriched Neutron-Transmutation-Doped 70Ge:Ga in Magnetic Fields

M. Watanabe, K. M. Itoh, Y. Ootuka, and E. E. Haller

Phys. Rev. B 60 ( 23 ) 15817-15823 1999.12

Research paper (scientific journal), Joint Work, Accepted

Scaling Analysis of the Low Temperature Conductivity in Neutron-Transmutation-Doped 70Ge:Ga

M. Watanabe, K. M. Itoh, Y. Ootuka, and E. E. Haller

Ann.Phys.(Leipzig) 8 631-637 1999.09

Research paper (scientific journal), Joint Work, Accepted

Critical Exponent for Localization Length in Neutron-Transmutation-Doped 70Ge:Ga

K. M. Itoh, M. Watanabe, Y. Ootuka, and E. E. Haller

Ann.Phys.(Leipzig) 8 ( SI-3-SI-9 ) 273-276 1999.09

Research paper (scientific journal), Joint Work, Accepted

Isotopic Shifts of the Low-Energy Excitations of Interstitial Oxygen in Germanium

K. Laβmann, C. Linsenmaier, F. Maier, F. Zeller, E. E. Haller, K. M. Itoh, L. I. Khirunenko, B. Pajot, and H. Mussig

Physica B 263-264 384-387 1999.03

Research paper (scientific journal), Joint Work, Accepted

Isotope Effect for the Thermal Expansion Coefficient of Germanium

V. I. Ozhogin, N. A. Babushikina, L. M. Belova, and A. P. Zhernov, E. E. Haller, K. M. Itoh

JETP 88 ( 1 ) 135-137 1999.01

Research paper (scientific journal), Joint Work, Accepted

同位体制御による高熱伝導度シリコン基板の開発　-現状と展望-

μTechnology Business ( 1999年11月号 ) 27〜30 1999

Research paper (scientific journal), Single Work

Ge:Gaにおける金属―絶縁体転移

伊藤公平

日本物理学会誌 54 ( 3 ) 205-208 1999

Research paper (scientific journal), Joint Work

アンダーソン転移の理論と実験の現状

伊藤公平

固体物理 34 ( 5 ) 301-308 1999

Research paper (scientific journal), Joint Work

Effect of Isotope Disorder on Energies and Lifetimes of Phonons in Germanium

A. Göbel, D. T. Wang, M Cardona, L. Pintschovius, W. Reichardt, J. Kulda, N. Pyka, E. E. Haller, and K. Itoh

Phys. Rev. B 58 ( 16 ) 10510-10522 1998.10

Research paper (scientific journal), Joint Work, Accepted

Electrical Properties of Isotopically Enriched Neutron-Transmutation Dop-ed 70Ge:Ga Near the Metal-Insulator Transition

M. Watanabe, Y. Ootuka, K. M. Itoh, and E. E. Haller

Phys. Rev. B 58 ( 15 ) 9851-9857 1998.10

Research paper (scientific journal), Joint Work, Accepted

Selenium Double Donors in Neutron Transmutation Doped,Isotopically Controlled Germanium

C. S. Olsen, J. W. Beeman, K. M. Itoh, J. Farmer, V. I. Ozhogin, and E. E. Haller

Solid State Comm. 108 ( 11 ) 895-898 1998.07

Research paper (scientific journal), Joint Work, Accepted

Optical Phonons in Isotopic Ge Studied by Raman Scattering

J. M. Zhang, M. Giehler, A. Gӧbel, T. Ruf, and M. Cardona, E. E. Haller and K. Itoh

Phys. Rev. B 57 ( 3 ) 1348-1351 1998.01

Research paper (scientific journal), Joint Work, Accepted

Raman Determination of Stresses and Strains in 3C-SiC Films Grown on 6-inch Si Substrates

C. Hagiwara, K. M. Itoh, J. Muto, H. Nagasawa, K. Yagi, H. Harima, K. Mizoguchi, and S. Nakashima

Materials Science Forum 264 & 268 669-672 1998.01

Research paper (scientific journal), Joint Work, Accepted

Calculation of the Anisotropy of the Hall Mobility in N-type 4H- and 6H-SiC

T. Kinoshita, M. Schadt, K. M. Itoh, J. Muto, G. Pensl, and K. Takeda

Materials Science Forum 264 & 268 295-298 1998.01

Research paper (scientific journal), Joint Work, Accepted

半導体同位体工学

伊藤公平

固体物理 33 ( 12 ) 965-978 1998

Research paper (scientific journal), Single Work

Ionized Impurity Scattering in Isotopic-ally Engineered Compensated Ge:Ga,As

K. M. Itoh, T. Kinoshita, W. Walukiewicz, J. W. Beeman, E. E. Haller, J. Muto, J. W. Farmer, and V. I. Ozhogin

Materials Science Forum 258 & 263 77-82 1997.12

Research paper (scientific journal), Joint Work, Accepted

Isotopic Shifts of the Rotational States of Interstitial Oxygen in Germanium

N. Aichele, U. Ommel, K. Lassmann, F. Maier, F. Zeller, E. E. Haller, K. M. Itoh, L. I. Khirunenko, V. Shkhovtsov, B. Pajot, E. Fogarassy, and H. Müssig

Materials Science Forum 258 & 263 47-52 1997.12

Research paper (scientific journal), Joint Work, Accepted

Matrix-Insuced Isotope Shift of a Vibr-ational Mode of Interstitial Oxygen in Germanium

B. Pajot, E. Artacho, L. I. Khirunenko, K. Itoh, and E. E. Haller

Materials Science Forum 258 & 263 41-46 1997.12

Research paper (scientific journal), Joint Work, Accepted

Thermal Conductivity of Germanium Crystals with Different Isotopic Compositions

M. Asen-Palmer, K. Bartowski, E. Gmelin, M. Cardona, A. P. Zhernov, V. Ozhogin, A. Inyushikin, A. Taldenkov, K. Itoh, and E. E. Haller

Phys. Rev. B 56 ( 15 ) 9431-9447 1997.10

Research paper (scientific journal), Joint Work, Accepted

Interstitial Oxygen in Germanium and Silicon

E. Artacho, F. Yudurain, B. Pajot, R. Ramirez, C. P. Herrero, L. I. Khirunenko, K. M. Itoh, E. E. Haller

Phys. Rev. B 56 ( 7 ) 3820-3833 1997.08

Research paper (scientific journal), Joint Work, Accepted

Carrier Scattering by Neutral Divalent Impurities in Semiconductors:Theory and Experiment

K. M. Itoh, T. Kinoshita, J. Muto, N. M. Heagel, W. Walukiewicz, O. D. Dubon, J. W. Beeman, and E. E. Haller

Phys. Rev. B 56 ( 4 ) 1906-1910 1997.07

Research paper (scientific journal), Joint Work, Accepted

Morphological, Electrical and Optical Properties of Heat-Treated Magnesium Phthalocyanine Films

K. Fujita, J. Muto, and K. M. Itoh

J. Mater. Sci. Lett. 16 ( 23 ) 1894-1897 1997.01

Research paper (scientific journal), Joint Work, Accepted

Carrier Scattering by Neutral Double Donors and Acceptors: Theory and Experiment

K. M. Itoh, W. Walukiewicz, N. M. Haegel, O. D. Dubon, J. W. Beeman, J. Muto, and E. E. Haller

Proc. 7th ICSCS 141-146 1997

Research paper (international conference proceedings), Joint Work, Accepted

Hopping Conduction and Metal-Insul ator Transition in Isotopically Enriched Neutron Transmutation Doped 70Ge:Ga

K. M. Itoh, E. E. Haller, J. W. Beeman, W. L. Hansen, L. A. Reichertz, E. Kreysa, T. Shutt, A. Cummings, W. Stockwell, B. Sadoulet, J. Muto, J. W. Farmer, and V. I. Ozhogin

Phys. Rev. Lett. 77 ( 19 ) 4058-4061 1996.11

Research paper (scientific journal), Joint Work, Accepted

Stark Broadening of Impurity Absorption Lines by Inhomogeneous Electric Fields in Highly Compensated Germanium

Y. Harada, K. Fujii, T. Ohyama, K. M. Itoh, and E. E. Haller

Phys. Rev. B 53 ( 24 ) 16272-16278 1996.06

Research paper (scientific journal), Joint Work, Accepted

Direct Formation of x1-MgPc Films by the MicelleDisruption Method

H. G. Kubota, J. Muto, and K. M. Itoh

J. Mater. Sci. Lett. 15 1475-1477 1996.06

Research paper (scientific journal), Joint Work, Accepted

Particle Detection and Non-Equilibrium Phonons: Experience with Large Germa-nium Crystals and NTD Ge Thermistors

B. Sadoulet, D. Akerib, P. D. Barnes, Jr., A. Cummings, A. Da Silva, R. Diaz, J. Emes, S. Golwala, E. E. Haller, K. Itoh, W. Knowlton, F. Queinnec, R. R. Ross, D. Seitz, T. Shutt, G. Smith, W. Stockwell, and S. White

Physica B 219&220 741-743 1996.04

Research paper (scientific journal), Joint Work, Accepted

Evidence for Correlated Hole Distribution in Neutron-transmutation-doped

K. M. Itoh, J. Muto, W. Walukiewicz, J. W. Beeman, E. E. Haller, A. J. Mayur, Hyunjung Kim, M. Dean Sciacca, A. K. Ramdas, R. Buczko, J. W. Farmer, and V. I. Ozhogin

Phys. Rev. B 53 ( 12 ) 7797-7803 1996.03

Research paper (scientific journal), Joint Work, Accepted

Isotope Effect in the Thermal Conductivity of Germanium Single Crystals

V. I. Ozhogin, A. V. Inyushikin, A. V. Tikhomirov, G. E. Popov, E. Haller, and K. Itoh

JETP Lett. 63 ( 6 ) 490-494 1996.03

Research paper (scientific journal), Joint Work, Accepted

Recent Results with a 62 g Ge Cryogenic Dark Matter Detector

T. Shutt, D. S. Akerib, P. D. Barnes Jr., A. Cummings, A. Da Silva, R. Diaz, J. Emes, S. R. Golwala, E. E. Haller, K. Itoh, B. Knowlton, F. Quiennec, R. R. Ross, B. Sadoulet, D. Seitz, G. Smith, W. Stockwell, T. Trumbull, R. Therrien, S. White, and B. A. Young

Nucl. Inst. Meth. A 370 165-167 1996.01

Research paper (scientific journal), Joint Work, Accepted

Neutron Transmutation Doped Germanium Thermistors for Sub-mm Bolometer Application

E. E. Haller, K. M. Itoh and J. W. Beeman

Proc. of 30th ESLAB 1996

Research paper (international conference proceedings), Joint Work, Accepted

Electric Field Broadening of Gallium Acceptor States in Compensated Ge:Ga,As

K. M. Itoh, W. Walukiewicz, J. W. Beeman, E. E. Haller, A. J. Mayur, Hyunjung Kim, M. D. Sciacca, A. K. Ramdas, R. Buczko, J. W. Farmer, and V. I. Ozhogin

Materials Science Forum 196&201 127-132 1995.11

Research paper (scientific journal), Joint Work, Accepted

Neutral Impurity Scattering in Isotopically Engineered Ge

K. M. Itoh, W. Walukiewicz, H. D. Fuchs, J. W. Beeman, E. E. Haller, J. W. Farmer, and V. I. Ozhogin

Proc. of 22th ICPS 81-84 1995

Research paper (international conference proceedings), Joint Work, Accepted

Stark-Broadening by Inhomogeneous Electric Field in Compensated Germanium

Y. Harada, K. Fujii, T. Ohyama, E. E. Haller, and K. Itoh

Sol. State Comm. 93 455 1995

Research paper (scientific journal), Joint Work, Accepted

Compensation Dependence of Ga Impurity Absorption Spectra in Highly Compensated Ge:Ga,As

K. Itoh, W. Walukiewicz, J. W. Beeman, E. E. Haller, J. W. Farmer, and V. I. Ozhogin

Sol. State Comm. 93 456 1995

Research paper (scientific journal), Joint Work, Accepted

Isotopic Mass Dependence of the Electronic Band Structure and the Vibrational Spectrum of Germanium

C. Parks, A. K. Ramdas, S. Rodriguez, K. M. Itoh, and E. E. Haller

Proc. of 22th ICPS 165-168 1995

Research paper (international conference proceedings), Joint Work, Accepted

Disorder-Induced Raman Scattering in 70Ge(1-x) 76Gex Isotopic Alloys

P. Etchegoin, H. D. Fuchs, C. H. Grein, K. Itoh, E. E. Haller, and M. Cardona

Proc. of 22th ICPS 277-280 1995

Research paper (international conference proceedings), Joint Work, Accepted

Neutral Impurity Scattering in Isotopically Engineered Ge

K. M. Itoh, W. Walukiewicz, H. D. Fuchs, J. W. Beeman, E. E. Haller, J. W. Farmer, and V. I. Ozhogin

Phys. Rev. B 50 ( 23 ) 16995-17000 1994.12

Research paper (scientific journal), Joint Work, Accepted

Fine Structure of the Asymmetric Stretching Vibration of Dispersed Oxygen in Monoisotopic Germanium

A. J. Mayur, M. Dean Sciacca, M. K. Udo, A. K. Ramdas, K. M. Itoh, J. A. Wolk, and E. E. Haller

Phys. Rev. B 49 ( 23 ) 16293-16299 1994.06

Research paper (scientific journal), Joint Work, Accepted

Electronic Band Structure of Isotopically Pure Germanium: Modulated Transmission and Reflectivity Study

C. Parks, A. K. Ramdas, and S. Rodriguez, K. M. Itoh, and E. E. Haller

Phys. Rev. B 49 ( 20 ) 14244-14250 1994.05

Research paper (scientific journal), Joint Work, Accepted

Neutron Transmutation Doping of Isotopically Engineered Ge

K. M. Itoh, W. L. Hansen, J. W. Beeman, E. E. Haller, J. W. Farmer, A. Rudnev, A. Tikhomirov, and V. I. Ozhogin

Appl. Phys. Lett. 64 ( 16 ) 2121-2123 1994.04

Research paper (scientific journal), Joint Work, Accepted

Neutron Transmutation Doped Natural and Isotopically Engineered Germanium Thermistors

E. Haller, K. M. Itoh, J. W. Beeman, W. L. Hansen, and V. I. Ozhogin

SPIE proceedings series 2198 630-637 1994.03

Research paper (international conference proceedings), Joint Work, Accepted

Isotopically Controlled Germanium: A New　Medium for the Study of　Carrier Scattering by Neutral Impurities

H. D. Fuchs, K. M. Itoh, and E. E. Haller

Phil. Mag. B 70 661-670 1994.01

Research paper (scientific journal), Joint Work, Accepted

Phonons in Isotopically Disordered Ge

P. Etchegoin, H. D. Fuchs, J. Weber, M. Cardona, L. Pintschovius, K. Itoh, and E. E. Haller

Phys. Rev. B. 48 ( 17 ) 12661-12671 1993.11

Research paper (scientific journal), Joint Work, Accepted

Effects of Isotope Disorder on Phonons in Germanium Determined from Bound Exciton Luminescence

G. Davies, J. Hartung, V. Ozhogin, K. Itoh, W. L. Hansen and E. E. Haller

Semic. Sci. and Technol. 8 127-130 1993.11

Research paper (scientific journal), Joint Work, Accepted

Isotope Dependence of the Lowest Direct Energy Gap in Crystalline Germanium

G. Davies, E. C. Lightowlers, T. S. Hui, V. Ozhogin, K. M. Itoh, W. L. Hansen, and E. E. Haller

Semic. Sci. and Technol. 8 2201-2204 1993.10

Research paper (scientific journal), Joint Work

High Purity Isotopically Enriched 70Ge and 74Ge Single Crystals: Isotope Separation, Purification and Growth

K. Itoh, W. L. Hansen, E. E. Haller, J. W. Farmer, V. I. Ozhogin, A. Rudnev and A. Tikhomirov

J. Mater. Res. 8 ( 6 ) 1341-1347 1993.06

Research paper (scientific journal), Joint Work, Accepted

Low Temperature Hopping Conduction in Neutron Transmutation Doped Isotopically Enriched

K. M. Itoh, W. L. Hansen, J. W. Beeman, E. E. Haller, J. W. Farmer, and V. I. Ozhogin

J. Low Temp. Physics 93 307-312 1993.04

Research paper (scientific journal), Joint Work, Accepted

Ge-Au Eutectic Bonding of Ge{100} Single Crystals

W. B. Knowlton, K. M. Itoh, J.W. Beeman, J. H. Emes, and E. E. Haller

J. Low Temp. Physics 93 343-348 1993.04

Research paper (scientific journal), Joint Work

Vibrational Band Modes in Germanium:Isotopic Disorder-Induced Raman Scattering

H. D. Fuchs, P. Etchegoin, M. Cardona, K. Itoh and E. E. Haller

Phys. Rev. Lett. 70 ( 11 ) 1715-1718 1993.03

Research paper (scientific journal), Joint Work, Accepted

Neutron Transmutation Doping of Isotopically Controlled Germanium

K. Itoh, W. L. Hansen, E. E. Haller, J. W. Farmer and V. I. Ozhogin

Materials Science Forum. 117&118 117-122 1993.03

Research paper (scientific journal), Joint Work, Accepted

Isotopic Dependence of Near-Bandgap Luminescence from Germanium

G. Davies, E. C. Lightowlers, V. Ozhogin, K. Itoh, W. L. Hansen and E. E. Haller

Materials Science Forum. 117&118 111-116 1993.03

Research paper (scientific journal), Joint Work

Isotope Dependence of the Indirect Energy Gap of Germanium

G. Davies, E. C. Lightowlers, K. Itoh, W. L. Hansen, E. E. Haller and V. Ozhogin

Semic. Sci. and Technol. 7 1271-1273 1992.08

Research paper (scientific journal), Joint Work, Accepted

Isotope Effect in Ge: A Photoluminescence Study

P. Etchegoin, J. Weber, M. Cardona, W. L. Hansen, K. Itoh, and E. E. Haller

Sol. State Comm. 83 ( 11 ) 843-848 1992.08

Research paper (scientific journal), Joint Work

Isotopic Disorder-Effects on the Phonons in Germanium

H. D. Fuchs, C. H. Grein, M. Cardona, W. L. Hansen, K. Itoh, and E. E. Haller

Sol. State Comm. 82 ( 4 ) 225-228 1992.03

Research paper (scientific journal), Joint Work, Accepted

A Comparison of the Phonon Spectra of 70Ge and Natural Ge Crystals:Effects of Isotopic Disorder

H. D. Fuchs, C. H. Grein, C. Thomson, M. Cardona, W. L. Hansen, K. Itoh, and E. E. Haller

Phys.Rev.B 43 ( 6 ) 4835-4842 1991.02

Research paper (scientific journal), Joint Work, Accepted

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