研究発表 - 石黒 仁揮
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Random Telegraph Signals in Very Narrow Channel MOSFET
Y. Shi, H. M. Bu, X. L. Yuan, Y. D. Zheng, H. Ishikuro, H. Majima, and T. Hiramoto
1999 Silicon Nanoelectronics Workshop （Kyoto, Japan） ,
1999年06月,口頭発表（一般）
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Threshold Voltage Shift in Ultra-Narrow MOSFETs by Quantum Mechanical Narrow Channel Effect
H. Majima, H. Ishikuro, and T. Hiramoto
1999 Silicon Nanoelectronics Workshop （Kyoto, Japan） ,
1999年06月,口頭発表（一般）
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Influence of Quantum Confinement Effects on Single Electron and Single Hole Transistors
Hiroki Ishikuro and Toshiro Hiramoto
1998 IEEE International Electron Devices Meeting (IEDM) （San Francisco, USA） ,
1998年12月,口頭発表（一般）
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Effects of Body Reverse Pulse Bias on Geometric Component of Charge Pumping Current in FD SOI MOSFETs
Tran Ngoc Duyet, Hiroki Ishikuro, Makoto Takamiya, Takuya Saraya, and Toshiro Hiramoto
1998 IEEE International SOI Conference, （Florida, USA） ,
1998年10月,口頭発表（一般）
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Measurement of Energetic and Lateral Distribution of Interface State Density in FD SOI MOSFETs
Tran Ngoc Duyet, Hiroki Ishikuro, Yi Shi, Takuya Saraya, Makoto Takamiya, and Toshiro Hiramoto
1998 International Conference on Solid State Devices and Materials (SSDM'98) （Hiroshima, Japan） ,
1998年09月,口頭発表（一般）
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Characteristics of Narrow Channel MOSFET Memory Based on Silicon Nanocrystals
Yi Shi, Kenichi Saito, Hiroki Ishikuro, and Toshiro Hiramoto
1998 International Conference on Solid State Devices and Materials (SSDM'98) （International Conference Center Hiroshima） ,
1998年09月,口頭発表（一般）
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The Origin of Tunnel Barrier in Silicon Single Electron Transistor", International Conference on Physics of Semiconductors (ICPS)
Hiroki Ishikuro and Toshiro Hiramoto
International Conference on Physics of Semiconductors (ICPS) （Jerusalem, Israel） ,
1998年08月,ポスター発表
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Effects of Interface Traps on Charge Retention Characteristics in Silicon-Quantum-Dot-Based MOS Diodes
Y. Shi, K. Saito, H. Ishikuro, and T. Hiramoto
1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures （Sapporo, Japan） ,
1998年06月,口頭発表（一般）
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Energy Spectrum of the Quantum-Dot in a Si Single-Electron-Device
Hiroki Ishikuro and Toshiro Hiramoto
IEEE 55th Annual Device Research Conference （Colorado, USA） ,
1998年06月,口頭発表（一般）
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Narrow Channel MOS Memory Based on Silicon Nano-Crystals
K. Saito, Y. Shi, H. Ishikuro, and T. Hiramoto
1998 IEEE Silicon Nanoelectronics Workshop （Hawaii, USA） ,
1998年06月,口頭発表（一般）
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Fabrication of Nano-Scale Point Contact MOSFETs Using Micrometer-Scale Design Rule
H. Ishikuro and T. Hiramoto
1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures （Sapporo, Japan） ,
1998年06月,口頭発表（一般）
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Fabrication of Si Point Contact MOSFETs Acting as Single Electron Transistors at Room Temperature
Hiroki Ishikuro and Toshiro Hiramoto
Silicon Nanoelectronics Workshop （Kyoto, Japan） ,
1997年06月,口頭発表（一般）
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Room Temperature Coulomb Blockade and Low Temperature Hopping Transport in a Multiple-Dot-Channel MOSFET
T. Hiramoto, H. Ishikuro, T. Fujii, G. Hashiguchi, and T. Ikoma
1996 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures （Sapporo, Japan） ,
1996年11月,口頭発表（一般）
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Floating Body Effects in 0.15 μm Partially Depleted SOI MOSFETs below 1 V
T. Saraya, M. Takamiya, T. N. Duyet, T. Tanaka, H. Ishikuro, T. Hiramoto, and T. Ikoma
IEEE International SOI Conference （Florida, USA） ,
1996年10月,口頭発表（一般）
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Fabrication of Si Nano-Structures by Anisotropic Etching for Single Electron Device Applications
T. Hiramoto, H. Ishikuro, T. Fujii, T. Saraya, G. Hashiguchi, and T. Ikoma
9th International MicroProcess Conference （Fukuoka, Japan） ,
1996年07月,口頭発表（一般）
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Coulomb Blockade in a Weakly Coupled Multiple-Dot-Channel MOSFET
H. Ishikuro, T. Fujii, T. Saraya, G. Hashiguchi, T. Hiramoto, and T. Ikoma
International Conference on Physics of Semiconductors(ICPS) （Berlin, Germany） ,
1996年07月,ポスター発表
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Extremely Large Amplitude of Random Telegram Signals in a Very Narrow Split-Gate MOSFET at Low Temperatures
H. Ishikuro, T. Saraya, T. Hiramoto, and T. Ikoma
International Conference on Solid State Devices and Materials (SSDM) （Osaka, Japan） ,
1995年08月,ポスター発表